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    2SD52 Search Results

    2SD52 Datasheets (139)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD52
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 43.86KB 1
    2SD52
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 42.43KB 1
    2SD52
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.15KB 1
    2SD52
    Unknown Transistor Substitution Data Book 1993 Scan PDF 30.29KB 1
    2SD52
    Unknown The Japanese Transistor Manual 1981 Scan PDF 104.33KB 2
    2SD52
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 88.33KB 1
    2SD52
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 38.95KB 1
    2SD52
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 80.62KB 1
    2SD52
    Unknown Japanese Transistor Cross References (2S) Scan PDF 31.43KB 1
    2SD52
    Unknown Cross Reference Datasheet Scan PDF 38.73KB 1
    2SD52
    Unknown Transistor Replacements Scan PDF 75.39KB 1
    2SD520
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 33.52KB 1
    2SD520
    Unknown The Japanese Transistor Manual 1981 Scan PDF 105.41KB 2
    2SD520
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.63KB 1
    2SD520
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 72.53KB 1
    2SD521
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 33.52KB 1
    2SD521
    Unknown The Japanese Transistor Manual 1981 Scan PDF 105.41KB 2
    2SD521
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.63KB 1
    2SD521
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 88.28KB 1
    2SD521
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 72.53KB 1
    ...
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    2SD52 Price and Stock

    Samtec Inc

    Samtec Inc MTMM-104-12-S-D-520

    - Bulk (Alt: MTMM-104-12-S-D-520)
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    Avnet Americas MTMM-104-12-S-D-520 Bulk 1 Weeks 1
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    Newark MTMM-104-12-S-D-520 Bulk 967 1
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    Sager MTMM-104-12-S-D-520 967 1
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    Powell Electronics MTMM-104-12-S-D-520 638 1
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    Samtec Inc DW-14-12-S-D-525

    Board Stackers & Spacers, Pin Header, 13.34 mm, 28 Contacts, Solder, 2 Rows, 2.54 mm, DW Series - Bulk (Alt: DW-14-12-S-D-525)
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    Newark DW-14-12-S-D-525 Bulk 442 1
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    Sager DW-14-12-S-D-525 442 1
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    Powell Electronics DW-14-12-S-D-525 292 1
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    Samtec Inc HW-11-12-S-D-520-152

    HIGH TEMPERATURE FLEXIBLE BOARD STACKING - Bulk (Alt: HW-11-12-S-D-520-152)
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    Avnet Americas HW-11-12-S-D-520-152 Bulk 1 Weeks 1
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    Powell Electronics HW-11-12-S-D-520-152 167 1
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    Samtec Inc ZSS-105-02-S-D-523

    Board Stackers & Spacers, Pin Header, 13.28 mm, 10 Contacts, Solder, 2 Rows, 2.54 mm, ZSS Series - Bulk (Alt: ZSS-105-02-S-D-523)
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    Avnet Americas ZSS-105-02-S-D-523 Bulk 1 Weeks 1
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    Sager ZSS-105-02-S-D-523 147 1
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    Powell Electronics ZSS-105-02-S-D-523 97 1
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    Master Electronics ZSS-105-02-S-D-523
    • 1 -
    • 10 $4.70
    • 100 $4.00
    • 1000 $2.57
    • 10000 $1.46
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    Samtec Inc ZSS-107-02-S-D-523

    Board Stackers & Spacers, Pin Header, 13.28 mm, 14 Contacts, Solder, 2 Rows, 2.54 mm, ZSS Series - Bulk (Alt: ZSS-107-02-S-D-523)
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    Avnet Americas ZSS-107-02-S-D-523 Bulk 1 Weeks 1
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    Powell Electronics ZSS-107-02-S-D-523 92 1
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    2SD52 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SD525

    Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio


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    2sd5252sb595 PDF

    2SB596

    Abstract: 2SD526 2SD52
    Contextual Info: JMnic Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20~25W high fidelity audio frequency amplifier output stage


    Original
    2sb596o-220c2sd5262sd52 PDF

    2SB596

    Abstract: pnp hfe 120-240 2SD526
    Contextual Info: SavantIC Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD526 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage


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    2sb596o-220c2sd526pnp hfe 120-240 PDF

    2sc1815

    Abstract: 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917
    Contextual Info: - m tì: % Type No. Manuf. JÊ « SANYO 2 TOSHIBA 'S NEC B ÎL HITACHI ¡ÜÍ ± iS FUJITSU fò T MATSUSHITA * 2SC lb V - - 2SC 17 3K zsuöza * $ 2SC829 * 2SC 17A M. $ 2SC 18 S 2 2SC829 * * 2SC 21 S 2SC521A * 2SC 22 S m 2SD526 * 2SC 23 - d M 2SD526 a±a * 2SC 26


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    2sc8292sc8282sc521a2sd1485+92sd5262sc16842sc18152sc46982sc9302sc1684 s2sc29882sc387a2sd917 PDF

    Contextual Info: V IJ a > P N P = m m 2SB596 •¥-fö : mm 0 3 .6 + 0 .2 3 Wÿ v>0 coÊ MU &Ä • hpE • 2SD526 t : P c = 30W T c = 25°C V' o 7' ') * 'y 9 ') (; &■ <0 i t o 3 > 20~ 25 W ^ ' f 7 7 /í í - f ' í t T > (Ta = 25°C) m g a2 ■§• ÎË i& M f£ VCBO


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    PDF

    2sb595

    Abstract: 2sb595o 2SB595-O transistor 2sd525
    Contextual Info: 2SB595 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 POWER AMPLIFIER APPLICATIONS. U nit in mm • High Breakdown Voltage : V^EO = —100V • Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) • Complementary to 2SD525.


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    2sb595--100v2sd5252sb595o+22sb595-otransistor 2sd525 PDF

    transistor 2sd525

    Abstract: 2SD525
    Contextual Info: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.


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    2sd5252sb595transistor 2sd525 PDF

    2SB596

    Abstract: 2SD526 AC75 20-25W
    Contextual Info: TOSHIBA 2SD526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm PO W ER AM PLIFIER APPLICATIONS 43.6 + 0.2 • • • • High Power Dissipation : P0 = 3OW Te = 25°C Good Linearity of hjrg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency


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    2sd5262sb596961001eaa2ac75+120-25w PDF

    transistor D526

    Abstract: D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER
    Contextual Info: TOSHIBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2S D526 High Power Dissipation : Pq = 30W T c = 25°C Good Linearity of hpE. Complementary to 2SB596. Recommend for 2Q~25W High Fidelity Audio Frequency


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    2sd5262sb596o-220ab50x50x2mm+950x50xlmm961001eaa2transistor d526d526d526 yd526 transistord526 - ytoshiba d52630w audio amplifier PDF

    2SB595

    Abstract: 2SD525 AC75
    Contextual Info: TO SH IBA 2SB595 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • • SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 High Breakdown Voltage : V qeo = —100V Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) Complementary to 2SD525.


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    2sb5952sd525ac75 PDF

    2SB595

    Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB595 Unit in mm 10.3 MAX. 03.6ÍO.2 POWER AMPLIFIER APPLICATIONS. FEATURES: • High Breakdown Voltage : V^gQ-100V • Low Collector-Emitter Saturation Voltage : VcE sat =~2.0V(Max.) • Complementary to 2SD525. 1.5 MAX


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    2sb595gq--100v2sd525 PDF

    2SD526

    Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in POWER AMPLIFIER APPLICATIONS. 03. 6± O .2 FEATURES : • High Power Dissipation : P C=30W Tc=25°C • Good Lineality of h p E . • Complementary to 2SB596. • Recommended for 20 'v 25W High Fidelity Audio


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    2sd5262sb596 PDF

    2sb596

    Abstract: 2SD526 ic audio amplifier 2*5w
    Contextual Info: Inchange Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20~25W high fidelity


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    2sb596o-220c2sd526ic audio amplifier 2*5w PDF

    2SD454

    Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
    Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *


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    2sd4392sd4572sd6422sd1196+162sd6352sd6332sd6572sd5232sc14492sc22362sd4542sc9012sc16672sd400 e2sc2516 nec2sc21202sd4732sd6472s08672sd526 PDF

    2SD525

    Abstract: 2SB595
    Contextual Info: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications


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    2sd525o-220c2sb595 PDF

    2SB596 LB

    Abstract: 2SB596 2SD526
    Contextual Info: ÆàMOSPEC PNP SILICON POWER TRANSISTORS .designed for use in general power amplifier application FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 10V(Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 40-240@lc= 0.5A * Complementary to NPN 2SD526


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    2sd5262sb5962sb596 lb PDF

    NPN 80V 3A

    Abstract: 2SA671 2SD526 transistor 2SD526
    Contextual Info: 2SD526 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    2sd526o-2202sa671npn 80v 3a+1transistor 2sd526 PDF

    2SD 388 A

    Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061
    Contextual Info: - m £ Type No. tt s Manuf. M 2SÜ1135 2SD1266A 2SC4007 2SD1135 2SD1266 2SÜ2023 2SD1135 2SDÎ266A 2SC4007 2SD526 2SD313 2SD880 2S0 366A fé T 2SD313 2SD526 2SD 367 fé T / H n ✓ M M z. 2SD 371 2SD1884 2SD820 2SD380 2SD867 2SD319 2SD427 2SD716 2SD 373 -


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    2sd365a2sd3662sd366a2sd367+162sd3682sd3692sd3702sd3712sd3722sd3732sd 388 a2sd4272sd3132sc23202sd6502sc20732sd8672sc22042sd11382sd2061 PDF

    2SD2061

    Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
    Contextual Info: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061


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    2sd1212sd1222sd1232sd124+162sc13982sd1266a2sd12642sd5252sd5262sd20812sd20612sd8802sc7822sd8672sd8772sd7972s08802sc782 toshiba2sd 123 tl2sc783 PDF

    2SD526

    Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm POWER AMPLIFIER APPLICATIONS. J2Í3.6±0.2 FEATURES : • High Power Dissipation : PC=30W Tc=25°C • Good Linearity of hpg. • Complementary to 2SB596. • Recommended for 20 ^ 25W High Fidelity Audio


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    2sd5262sb596 PDF

    Contextual Info: 2SB596 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpj;. ■ Complementary to 2SD526. • Recommended for 20 ^ 25W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


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    2sb5962sd526 PDF

    2SD526

    Abstract: 2SB596
    Contextual Info: Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB596 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20~25W high fidelity


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    2sd526o-220c2sb596 PDF

    2SD636 R

    Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
    Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b


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    2sd5262sd5452sd5522sd553+162sd5602sd5682sd5692sd5712sb639h2sd629h2sd636 r2sd6362sb6152sd650h2sb6132sd5112sd6462sd6372sb6312sd601 PDF

    2SB596

    Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)


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    2sb5962sd526100x100x2m100x100x PDF