TO220FP Search Results

P9NB60

Abstract: P9NB60FP
Contextual Info: STP9NB60 STP9NB60FP  N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE ST P9NB60 ST P9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY

TRANSISTOR 15n60c3

Contextual Info: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

11n60c3

Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

6R199P

Abstract: IPA60R199CP 6R199P mosfet
Contextual Info: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability PG-TO220FP • Qualified according to JEDEC1) for target applications

21n50c3

Abstract: PG-TO220FP spp21n50c3
Contextual Info: SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P G-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated

11n60c3

Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

20n65c3

Abstract: S4560 20N65 SPA20N65C3 SPI20N65C3 SPP20N65C3
Contextual Info: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology V DS RDS on 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated

11n60c3

Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

Contextual Info: SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS Power Transistor Feature V DS RDS on 650 V 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 PG-TO262 • Ultra low gate charge PG-TO220FP PG-TO220 • Periodic avalanche rated

REGULATOR IC FOR 150V

Abstract: ba61w12st CIRCUIT DIAGRAM OF VOLTAGE REGULATOR ic voltage regulator circuit diagram 4 PIN Power regulator IC
Contextual Info: Regulator ICs Dual output voltage regulator with power saving BA61W12ST The BA61W12ST is a general-purpose, low saturation power supply with two outputs : 10V, 1A and 5V, 500mA. The IC is available in a compact TO220FP-5 package. The outputs can be turned off during the power saving state with the

BA41W12ST

Contextual Info: Regulator ICs Dual output voltage regulator with power saving BA41W12ST The BA41W12ST is a general-purpose power supply with two outputs : 8V, 1A and 5V, 500mA. The IC is available in a compact TO220FP-5 package. The outputs can be turned off during the power saving state with a built-in switch. Also

STP9NB60

Abstract: STP9NB60FP
Contextual Info: STP9NB60 STP9NB60FP N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE STP9NB60 STP9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

BA61W12ST

Abstract: BA61W12SAT
Contextual Info: BA61W12SAT Regulator ICs Dual output voltage regulator with power saving BA61W12ST The BA61W12ST is a general-purpose, low saturation power supply with two outputs : 10V, 1A and 5V, 500mA. The IC is available in a compact TO220FP-5 package. The outputs can be turned off during the power saving state with the built-in

08n50c3

Abstract: sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3
Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

07N60C3

Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3
Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

11N65C3

Abstract: 11N65C 11n65 SPA11N65C3 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 7A SP000216318 SPP11N65C3 SPI11N65C3 11n6
Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated

11N65C3

Contextual Info: SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS on 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated

07n60c3

Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

TO220FP

Abstract: TO220FP-5
Contextual Info: TO220FP-5 LSI Assembly Units : mm • TO220FP-5 4.5+0.3 −0.1 φ3.2±0.1 2.8+0.2 −0.1 8.0±0.2 0.7 12.0±0.2 7.0+0.3 −0.1 0.85±0.2 13.5Min. 17.0+0.4 −0.2 1.8±0.2 10.0+0.3 −0.1 1.2 0.8 1.778 0.5±0.1 2.85 1 2 3 4 5 ∗ The contents described herein are subject to change without notice.

21N50C3

Contextual Info: SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 PG-TO220FP • Ultra low gate charge PG-TO220 P G-TO262 • Periodic avalanche rated

15N60CFD

Abstract: 15N60 JESD22 SPA15N60CFD PG-TO220FP D134 transistor D94 15n60c
Contextual Info: SPA15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO220FP • Extreme dv /dt rated

NTE2673

Abstract: TO220FP
Contextual Info: NTE2673 NPN & NTE2674 (PNP) Silicon Complementary Transistors General Purpose Power TO220FP Type Package Features: D Low Collector−Emitter Saturation Voltage: VCD(sat) = 0.5V Typ (IC/IB = 2A/0.2A) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

STP45NF3LL

Contextual Info: STP45NF3LL - STP45NF3LLFP STB45NF3LL N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D2PAK STripFET II POWER MOSFET TYPE STP45NF3LL STP45NF3LLFP STB45NF3LL • ■ ■ ■ ■ VDSS RDS on ID 30 V 30 V 30 V <0.018Ω <0.018Ω <0.018Ω 45 A 45 A 27 A