TO-66 TRANSISTOR Search Results

2N3789

Abstract: SDT3802
Contextual Info: industrial power transistors 130 SILICON PNP TRANSISTORS 15 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE VeB SDT3801 SDT3802 SDT3803 SDT3804 2N3789 2N3790 2N3791 2N3792 TO-66 TO-66 TO-66 TO-66 TO-3 TO-3 TO-3 TO-3 -60 -80 -60 -80 -60 -80 -60 -80 VeE VEB -60

40411 transistor

Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66

bdx 330

Abstract: DARLINGTON ESM 749 box53a 800V PNP DARLINGTON ESM 30 bov66 BUX37 bu bdx 64 BUX 837 BUV74
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v CEO 45V 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A BDV 67 B BDV 66 B BDV 67 C

BU 450 bdx

Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A

2sd315

Abstract: 2SB509
Contextual Info: SavantIC Semiconductor Product Specification 2SB509 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Complement to type 2SD315 APPLICATIONS ·For use in audio frequency power amplifier application PINNING see Fig.2 PIN DESCRIPTION Fig.1 simplified outline (TO-66) and symbol

2N5466

Abstract: SDT1062 sdt1061
Contextual Info: industrial power transistors 132 SILICON NPN HI-VOLTAGE TRANSISTORS 5 Amp TO-3 TO-66 TO-61 NUMBERS NUMBERS NUMBERS SDr SDr SDr SDr SDr SDr SDr SDr SDr SDr 1050 1051 1052 1053 1054 TO-3 1150 1151 1152 1153 1154 TO-66 SDr SDr SDr SDr SDr 1250 1251 1252 1253

J 2N3054

Abstract: transistor 101 UP2-TO66-B to-66 transistor
Contextual Info: UP2 Series for 1O-66 Outline UP2-TO66-CB w /2N3054 cr., '"'1 U 101 ~1 1Z w 00 ~ < w > ID < W / ~ n: ~ W 1W (/) < U 00 (TO-66) TRANSISTOR DESCRIPTION OF CURVES N.C. Horiz.Device Only Mounted to G.10. 90 .N.C. Horiz. & Vert. With Dissipator. .200 FPM w/Diss.

2N3055 transistor equivalent

Abstract: 2N3055 equivalent equivalent transistor 2n3055 2N3054 HP3-000 T066 transistor 8cb hp*t03
Contextual Info: ~ HP1. TO66-8CB w/ 3 HP1 Series for Three TO-66 Outline G 110 I, 2N3054 (TO.66) TRANSISTORS 'A.- o DESCRIPTION OF CURVES /B ;:- 100 z ~ 90 ID ~ 8° cr., A. N.C. Horiz. Device Only Mounted to G.10. ~ o ID c( 70 ~ ~ n: 50 ~ ~ 1~ U) c( t) 30 B. N.C. Horiz. & Vert.

npn transistor to-66

Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 25-100@.5/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) l*FE@ V V ce PACKAGE (min/max @ A/V) p • D*

transistor A7a

Abstract: 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 2N6212A
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 sus VOLTS Ic (max) AMPS 1*FE@ I c / V ce DEVICE TYPE 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A ^CEO PACKAGE PNP TO-66 VcE(s»t) pr D* WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125

transistor w2B

Contextual Info: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection

486dx2

Abstract: 486DX2* circuits 74684 fast page mode dram controller QL2003 a486dx2
Contextual Info: QAN6 Page Mode DRAM Controller for 486DX2 1.0 SUMMARY Interfaces to 66 MHz 486DX2 microprocessor This application note presents an example of a high-performance page-mode DRAM controller implemented in a QuickLogic QL2003 FPGA which interfaces to a 66 MHz 486DX2 microprocessor. The function integrates the

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125

Contextual Info: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FUNCTIONAL BLOCK DIAGRAM Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages Output short-circuit protection

Transistors bd 133

Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
Contextual Info: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20

RA07M0608M-101

Abstract: RA07M0608M Pin-30mW RA07M0608
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to

RA55H4047M

Abstract: RA30H0608M RA30H0608M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to

ADG3231

Abstract: ADG3231BRJ-REEL ADG3231BRJ-REEL7 sot66 ADG3231BRYZ-REEL1
Contextual Info: 1.65 V to 3.6 V, Single-Channel Level Translator in SOT-66 Package ADG3231 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC1 VCC2 Y A GND APPLICATIONS 03298-001 Operates from 1.65 V to 3.6 V supply rails Unidirectional signal path Up/down level translation Ultracompact 6-lead SOT-66 and SOT-23 packages

zo 103 ma

Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
Contextual Info: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­

RA30H0608M

Abstract: RA30H0608M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to

RA07M0608M

Abstract: RF MOSFET MODULE RA07M0608M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to

ra55h4047

Abstract: RA55H4047M 300w mosfet power amplifier circuit diagram 30W rf block diagrams 6.0kgf.cm RF MOSFET MODULE RA30H0608M RA30H0608M-101 300w transistor power amplifier circuit diagram f88m
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to

Contextual Info: <Silicon RF Power Modules > RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The battery can be connected directly to the drain of the

Contextual Info: <Silicon RF Power Modules > RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The battery can be connected directly to the drain of the