BDV67 Search Results

darlington complementary power amplifier

Contextual Info: BDV66A; B BDV66C;D PHILIPS INTERNATIONAL SbE D • 711002b DDM337Ô 5 m ■ PHIN T - 3 3 - 3 ’ / DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. N-P-N complements are BDV67A; B; C and D. Matched complementary pairs can be

Contextual Info: BDV67A; B BDV67C; D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. PNP complements are B D V 6 6 A , B, C and D. Matched complementary pairs can be supplied.

BDV67C

Abstract: BDV67D BDV66A BDV67A 3kf2
Contextual Info: BDV67A; B BDV67C; D 2.90 n<a0 DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors for audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 6 6 A , B, C and D. Matched complementary pairs can be supplied.

bs33

Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages

BDV67DF

Abstract: BDV67CF BDV67B BDV67BF MC3774 BDV67AF NPN pnp MATCHED PAIRS BDV67C
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of issue December 1990 NPN Darlington power transistors PHILIPS INTERNATIONAL I_ _ I 5bE m I 7110fi2b 00433=16 33T B P H I N 1 ^ 3 3 -2 ^ P IN N IN G - S O T 1 9 9

BU 450 bdx

Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A

pnp 400v 10a

Abstract: box53a 800V PNP bdv 648 DARLINGTON ESM 30 BUV54 vceo 800V PNP BDX53 BDV66 bdx 66 bdx 67
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v C EO • 45V 60V ih o m s o n c s f 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A

BDV67

Abstract: BDV66A BDV67A BDV67C BDV97 BDV66
Contextual Info: BDV67A; B BDV67C; D DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. PNP complements are B D V 66A , B, C and D. Matched complementary pairs can be supplied. _

Contextual Info: P h ilip s C o m p o n e n ts BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SO T199 D ESC R IP TIO N PIN NPN epitaxial base Darlington transistors for audio output stages

BDV66B

Abstract: BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS
Contextual Info: BDV66, 67 Darlington Transistors Features: • Collector-Emitter sustaining voltage VCEO sus = 80V (Minimum) - BDV66A, BDV67A = 100V (Minimum) - BDV66B, BDV67B • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 10A • Monolithic construction with Built-in Base-Emitter Shunt Resistor.

V67D

Abstract: BDV67B
Contextual Info: BDV67A; B BDV67C; D 11 PHILIPS INTERNATIONAL SbE D • 711002b 0 QM33T2 Til M P H I N T - 13 DARLINGTON POWER TRANSISTORS N P N ep ita x ia l base D arling to n transistors fo r audio o u tp u t stages and general a m p lifie r and switching applications. PNP co m p lem ents are B D V 6 6 A , B, C and D. M atch ed c o m p lem en tary pairs can be supplied.

BDV67D

Abstract: BDV67A BDV66A BDV67C T-13 D 1413 transistor 8dv67
Contextual Info: BDV67A; B BDV67C; D V PHILIPS INTERNATIONAL StE ]> • TllGÔBb 0DM33T2 Til ■ PHIN T - 1 3 DARLINGTON POWER TRANSISTORS NPN epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. PNP complements are B D V 6 6 A , B, C and D. Matched complementary pairs can be supplied.

bdx 330

Abstract: DARLINGTON ESM 749 box53a 800V PNP DARLINGTON ESM 30 bov66 BUX37 bu bdx 64 BUX 837 BUV74
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v CEO 45V 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A BDV 67 B BDV 66 B BDV 67 C

BDV66

Abstract: BDV67 BDV66A BDV66B BDV67A BDV67B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Contextual Info: ÆAm o s p e c DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV66A BDV67A FEATURES: * Collector-Emitter Sustaining VoltageVCEo sus, = 6 0 V (Min - BDV66.BDV67 = 80 V (Min) - BDV66A.BDV67A = 100 V (Min) - BDV66B.BDV67B * Collector-Emitter Saturation Voltage

BDV67

Abstract: BDV67D BDV67 equivalent BDV67B BDV66 BDV67C diode 66a ic 67b BDV67A ic 67a
Contextual Info: Inchange Semiconductor Product Specification BDV67/67A/67B/67C/67D Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BDV66/66A/66B/66C/66D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in audio output stages and general

BDV67d

Abstract: BDV67DF
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors philips international 5bE I I_I • 711082b 00433=18 33T BIPHIN T -3 3 -2 ^ PINNING - SOT199 DESCRIPTION

BDV67D

Abstract: BDV67C BDV67 BDV67 equivalent BDV65 BDV65A BDV65B BDV65C BDV66A BDV67A
Contextual Info: BDV67A, B, C, D NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV67 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV66A, B, C, D. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

Contextual Info: Philips Components BDV66AF/66BF/66CF/66DF D a ta s h e e t statu s Product specification d a te of issue December 1990 PNP Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base Darlington transistors for audio output stages

transistor BU 184

Abstract: TRANSISTOR BDX pnp transistor 800v darlington NPN 600V 8a transistor transistor BDX 80 NPN Transistor 600V TO-220 pnp transistor 1000v transistor BU 109 transistor ESM NPN Transistor VCEO 1000V
Contextual Info: SUPERSWITCH high power transistor MU 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc