BDV66 Search Results

darlington complementary power amplifier

Contextual Info: BDV66A; B BDV66C;D PHILIPS INTERNATIONAL SbE D • 711002b DDM337Ô 5 m ■ PHIN T - 3 3 - 3 ’ / DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. N-P-N complements are BDV67A; B; C and D. Matched complementary pairs can be

Contextual Info: Philips Components BDV66AF/66BF/66CF/66DF D a ta s h e e t statu s Product specification d a te of issue December 1990 PNP Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base Darlington transistors for audio output stages

BU 450 bdx

Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A

pnp 400v 10a

Abstract: box53a 800V PNP bdv 648 DARLINGTON ESM 30 BUV54 vceo 800V PNP BDX53 BDV66 bdx 66 bdx 67
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v C EO • 45V 60V ih o m s o n c s f 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A

BD 669

Contextual Info: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general am plifier and switching applications. N-P-N complements are B D V 6 7 A ; B; C and D. Matched complementary pairs can be supplied.

Contextual Info: PH I L I P S SbE D INTERNATIONAL 711002b 0043304 Ö4S H P H I N Philips Components BDV66AF/66BF/66CF/66DF Data sheet status Product specification date of issue December 1990 PNP Darlington power transistors 7^ 3 3 - 3 / PINNING - SOT199 D ESCRIPTIO N PIN 1

BDV66C

Abstract: BDV67A BDV66A BDV66B Complementary Darlington Audio Power Amplifier bov66 BOV66D
Contextual Info: BDV66A; B BDV66C; D DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors fo r audio output stages and general amplifier and switching applications. N-P-N complements are B D V 67 A ; B; C and D. Matched complementary pairs can be supplied.

BDV66B

Abstract: BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS
Contextual Info: BDV66, 67 Darlington Transistors Features: • Collector-Emitter sustaining voltage VCEO sus = 80V (Minimum) - BDV66A, BDV67A = 100V (Minimum) - BDV66B, BDV67B • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 10A • Monolithic construction with Built-in Base-Emitter Shunt Resistor.

BDV66D

Abstract: BDV68 BDV68C BDV66C A11T darlington pair transistor BDV66A BDV67A M0433
Contextual Info: BDV66A; B _ JI BDV66C; D PHILIPS INTERNATIONAL SbE D • 711002b 0043370 S41 * P H I N ~ r -3 3 -y i DARLINGTON PO W ER TRANSISTO RS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching

BDV66CF

Abstract: BDV66DF BDV66AF BDV66BF BDV66D diode FLMS 16 65 20 t333
Contextual Info: PHILIPS INTERNATIONAL SbE » 711002b 0043304 flMS « P H I N Philips C om ponents BDV66AF/66BF/66CF/66DF Data sheet status Product specification date of issue December 1990 PNP Darlington power transistors 7 ^ 3 3 - 3 / DESCRIPTION PINNING - SOT199 PIN 1 2

bdx 330

Abstract: DARLINGTON ESM 749 box53a 800V PNP DARLINGTON ESM 30 bov66 BUX37 bu bdx 64 BUX 837 BUV74
Contextual Info: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v CEO 45V 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A BDV 67 B BDV 66 B BDV 67 C

bov66a

Abstract: .7Z24 BDV66A BDV66C BDV67A DARLINGTON 10A
Contextual Info: l+ BDV66A; BDV66C- is o DARLINGTON POWER TRANSISTORS P-N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. N-P-N complements are BD V67A; B; C and D. Matched complementary pairs can be supplied.

BDV66

Abstract: BDV67 BDV66A BDV66B BDV67A BDV67B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Contextual Info: ÆAm o s p e c DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV66A BDV67A FEATURES: * Collector-Emitter Sustaining VoltageVCEo sus, = 6 0 V (Min - BDV66.BDV67 = 80 V (Min) - BDV66A.BDV67A = 100 V (Min) - BDV66B.BDV67B * Collector-Emitter Saturation Voltage

BDV67

Abstract: BDV67C BDV67D BDV66 BDV67 equivalent BDV67A BDV67B BDV67/67A/67B/67C/67D
Contextual Info: SavantIC Semiconductor Product Specification BDV67/67A/67B/67C/67D Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BDV66/66A/66B/66C/66D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in audio output stages and general

BDV67D

Abstract: BDV67C BDV67 BDV67 equivalent BDV65 BDV65A BDV65B BDV65C BDV66A BDV67A
Contextual Info: BDV67A, B, C, D NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV67 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV66A, B, C, D. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

BDY66

Abstract: BDV66AF BDV66BF BDV66CF BDV66DF BDV88BF BDV66D
Contextual Info: Philips Components BDV66AF/66BF/66CF/66DF D atasheet status Product specification date of issue December 1990 PNP Darlington power transistors PINNING - SOT 199 DESCRIPTION DESCRIPTION base collector emitter PIN 1 2 3 PNP epitaxial base Darlington transistors for audio output stages

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is