BDV65A Search Results

BDV65

Abstract: BDV65B BDV65A BDV65C BDV64 BDV64A BDV64B BDV64C
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

darlington transistor with built-in temperature c

Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Contextual Info: Æ &MOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV64 .designed for general-purpose amplifier and low speed switching applications NPN BDV65 FEATURES: BDV64A BDV65A * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - BDV64.BDV65

BDV64B

Abstract: bdv64 Bdv64a
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current

BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV65B

Abstract: BDV65 bdv65a BDV64 BDV64A BDV64B BDV64C BDV65C
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current

BDV64B sgs-thomson

Abstract: dv65a BDV64
Contextual Info: BDV64/A/B BDV65/A/B SGS-THOMSON ILEO««! POWER DARLINGTONS DESCRIPTION The BDV65, BDV65A, BDV65B, are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are intended for use In power linear

BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV65

Contextual Info: ¿57 7^537 ^ T rZ 3 ~ Z ° \ G02Ô435 b • S G S -T H O M S O N RfflDO^HLHOTT^QlMO ! BDV64/A/B BDV65/A/B S G S-THOMSON 3QE D POWER DARLINGTONS D ESC RIPTIO N The BDV65, BDV65A, BDV65B, are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic

BDV65

Abstract: BDV65B transistors BDV65c BDV64A BDV65A BDV65C
Contextual Info: BDV65A, B, C NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV65 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV64A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS

Contextual Info: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature

tip142/TIP3055

Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
Contextual Info: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A

BDV65

Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power innovations Limited, UK • Designed or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current •

BDV65, BDV64

Abstract: BOV65B transistor npn 3-326 transistors BDV65c BOV65 BDV65B-BOV64B bdv64b transistor Motorola 3-326 transistor transistor BDv65c 150EC
Contextual Info: MOTORCLA SC XSTRS /R F 12E D | b3b7254 D 00‘47bcl 7 | NPN BDV65 BDV65A BDV65B BDV6SC MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP BDV64 BDV64A BDV64B BDV64C DARLING TO N S 10 AM PERES COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS COMPLEMENTARY SILICON POWER TRANSISTORS

BDV65

Abstract: BDV65B
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current

TIS140

Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Contextual Info: TBANSYS • I BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS mCTRONICS LIMITED SOT-93 PACKAGE TOP VIEW • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current

BOW84C

Abstract: BOW83B
Contextual Info: Power Transistors TO-218 Case* Continued f f General Purpose Amplifier TYPE NO. Pd (W) *C (A) BV c b O 00 h FE b v CEO (V) @«C (A) v CE VCE(SA T)@ »C <T (MHz) (V) (V) (A) «Typ NPN PNP BDV65 BDV64 12 BDV65A BDV64A BDV65B MIN MIN MIN MAX 125 60 60 1,000

BDV65

Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A This model is currently available, but not

BDV65, BDV64

Abstract: TIP-1 tip142 BDV64 TIP3055 DARLINGTON TRANSISTORS
Contextual Info: Power Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) h FE BVCEO (V) @ lC (A) @ V(je VCE(SA T) @ lc h (MHz) (V) (V) (A) «Typ NPN PNP BDV65 BDV64 12 BDV65A BDV64A BDV65B MIN MIN MIN MAX MAX 125 60 60 1,000

BDV64

Abstract: BDV64B BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C BDV65, BDV64
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE

BDV64

Abstract: BDV65A BDV65B BDV65C BDV64A BDV64B BDV64C BDV65
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● JUNE 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current

BDV64C

Abstract: BDV64B B0V64B 8DV64B
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157