BDV65
Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
Contextual Info: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright 1997, Power innovations Limited, UK • Designed or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current •
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bdv65bdv65abdv65bbdv65c+7bdv64bov64abdv64bbdv64cot-93bov658dv65c
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darlington transistor with built-in temperature c
Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Contextual Info: Æ &MOSPEC DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS PNP BDV64 .designed for general-purpose amplifier and low speed switching applications NPN BDV65 FEATURES: BDV64A BDV65A * Collector-Emitter Sustaining VoltageV ceopus, = 60 V Min - BDV64.BDV65
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bdv64bdv65bdv64abdv65a+4bdv64bbdv65bdarlington transistor with built-in temperature cto-247 npn silicon power transistors darlington
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BDV64C
Abstract: BDV64B B0V64B 8DV64B
Contextual Info: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK • • JU NE 1993 - R E V IS E D M A R C H 1997 Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C SOT-93 P A C KA G E TOP VIEW
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bdv64bdv64abdv64bbdv64c+7bdv65bdv65abdv65bbdv65cot-93b0v64b8dv64b
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BOX34B
Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A
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2n60412sbs72a2sb939a2sb951a+13box54bb0266ab064sb0700b0700abox34bbot64asgs-ates transistorsbot64mj0117bow94bbov64mj-01
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