T333 Search Results

Contextual Info: *L f j QUALITY THERMISTOR, IN C E333 RoHS /T333 (non RoHS) Mini NTC Thermistor, Epoxy-Filled Polyimide Tube, 0.037 in OD, Polyurethane Nylon Insulated Leads Description: Mini chip thermistor encapsulated with epoxy in polyimide tube with polyurethane nylon insulated 32 AWG solid

t2333

Abstract: T3122 t6322 T5323 81236 T1123 T1323 T2123 T2323 T3123
Contextual Info: TRIANGULAR TYPE LED LAMP • ■ ¡sm LENS COLOR TRIANGULAR TYPE Color Diffused TYP 1 3x4.6m/m 17.0 MAX CATHODE . As sample In P25-44 3x4.6m/m 4.0 M 27,0 MAX w Í2 LUMINOUS INTENSITY INM CD @10MA TYP 1 T1133 T1333 T2333 T3333 T3333P T4333 T5333 T7333 Red GaAsP

ke92

Abstract: 1Ft TRANSISTOR hb595 ke921k05
Contextual Info: m¥EREX P O W E R E X INC B^E T> m T B T H b S l O G D M M b O 'ì H P R X Powerex, Inc., Hlllls S tre e t, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KE921K05HB r - 3 3 -35"

Contextual Info: MF1501-02 IEEE1394 Controller S1R72805 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

2SD1166

Abstract: 50AS IDT755 darlington NPN 600V 8a
Contextual Info: TOSHIBA -CDISCRETE/OPTOl Sb DE DDD7Bfll 2 y 9Q 9 7 2 S 0 T O S HIBA 56C CDISCRETE/OPTO 07681 T-33-35 S IL IC O N NPN T R IP L E D IF F U SE D M E SA TYPE _ D A R L IN G T O N POWER) Unit in ram HIGH POWER SWITCHING APPLICATION 2 -£f&2 ±a 2

LC1 DT60

Abstract: BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C IEC134 z825
Contextual Info: BDT60;60A BDT60B;60C PHILIPS INTERNA TIO NA L SbE D • TllOôEb O O l43EQ4 bTl « P H I N T- 33 - ? SILICON DARLINGTON POWER TRANSISTORS P-N-P s ilic o n po w e r transistors in m o n o lith ic D arlington c irc u it fo r a u d io o u tp u t stages and general

n 5j

Abstract: NJ 20 U1 W NSDu95 SK-I 10
Contextual Info: NATL SEMICOND {DISCRETE} 2fl bSD113D 00354b5 L T-33-31 This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r NATL SENICOND {DISCRETE} 50 D E | b S 0 1 1 3 G DC^SMbt fl | ~ ^ T-33-31 NATL I« SZ ÌEMI C O N D , DISCRETE 28C

BDT63BF

Abstract: BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F
Contextual Info: BDT62F; BDT62AF ^BDT62BF; BDT62CF PHILIPS I N T E R NA TI O NA L SbE D 711DöBb 0 0 4 3 2 4 fl SILICON DARLINGTON POWER TRANSISTORS 23 B T P lTlÑ ” T-33-3/ PNP silicon darlington power transistors in a SOT186 envelope w ith an electrically insulated mounting

transistor D042

Abstract: b0338 b0332 transistor 338 D0420 b0334 bd33 transistor c 3331 BD333 BD335
Contextual Info: BD332; 334 BD336; 338 PHILIPS INTERNA TIO NA L SbE ]> 7110 02b 00W2a= t, l f l 4 * P H I N SILICON DARLINGTON POWER TRANSISTORS T -tt-S Î P-N-P e p itax ial base transistors in m o n o lith ic D arlin gton c irc u it fo r a u d io o u tp u t stages and general

Contextual Info: TOSHIBA -CDISCRETE/OPTOï 9Q97250 TOSHIBA ~5b Ï>e | TCHTHSO 0007fiñl H 0TÖ8L ' 56C DISCRETE/OPTO r o y T-33-35 SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ 2SD1166 Unit in ram HIGH POWER SWITCHING APPLICATION AC & DC MOTOR CONTROL APPLICATION

Contextual Info: TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA de T| T t m s s G sb ìjòC <D I S C R E T E / O P T O 07790 oodttto D' T-33-31 2SD798 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS. U n i t i n mm IGNITER APPLICATIONS.

KNC 201 15

Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
Contextual Info: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9

TIP107 Texas

Contextual Info: TEXAS INSTR -COPTO} "B 961726 b5 TEXAS IN S T R D eT| flit 1 75b Q03ba7t, 0 COPTOT 62C 3 6 8 7 6 TIP 105, TIP106, TIPI 07 P-N-P DARLINGTON CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 Designed for Complementary Use with TIPIOO, T IP 101, TIP102

D4SL-N

Abstract: floatless switch diagram TL4019 E3RB
Contextual Info: 2014-2015 Industrial Components Solution Selection Guide Sensing Co n t ro l Co m p o n e n t s S w i t c h i n g Co m p o n e n t s S a fe t y Better machines OMRON Automation and Safety is a leading global supplier of automation systems serving industrial

thermistor ntc 103

Abstract: ntc 10K B 3950 thermistor 10k 25 3435 thermistor ntc 1k THERMISTOR NTC 103 10K NTC thermistor 10k ohm b 3950 NTC 103 3950 ntc 0641 NTC 10K 3435 ntc thermistor 10k 3435
Contextual Info: Chip NTC Thermistor Document No TNT-06OS001A Issued date 2007/12/11 Page 1/8 1. Scope : This specification applies for the Lead-Free NTC thermistor series of chip NTC thermistor made by TA-I. Over Coat 2. Construction: Conductor Sn Plating Thermistor Element

T2333

Abstract: S2136 S4236 p2561 T7314 T5323 S7136 T1133 T3122 T5122
Contextual Info: m m m m m TRIANGULAR TYPE LED LAMP -•¿mi LENS COLOR TRIANGULAR TYPE Color Diffused TYP 1 3x4.6m/m As sample in P25-44 3x4.6m/m 4.0 ttJO MAX ax, -wo _ 5 174 M AX_ CATHOOi ^^55 . ^ ,3 ^ >| CMHQM moot -I2 W « 2 0.6 1.2 1.4 1.2 2.0 1.2 1.6 T1133 T4133

82c597

Abstract: 83C206 Cyrix 486 dx2 CX486 386DX CY82C597 intel 486 dx4 t324 amd 386 PC MOTHERBOARD diagram cyrix DX2
Contextual Info: PRELIMINARY CY82C597 386/486 Green Chip Set D Features Page mode DRAM controller supports mixture of 256KB/512KB/1MB/2MB/ 4MB/16MB devices D D MicrosoftR APM support 11 event detectors and 5 userĆdefined timers D D 160ĆPin single chip PQFP Supports PC/AT compatible systems

semikron SK 50 DB 100 D

Contextual Info: SIE D Ö13bb71 GÜG3ÖDD 11T S EM IK R O N SEMIKRON INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = - 2 V Values > CM I II III m > VcEV Units 1200 V 1200 V V VCBO Ie = 0 1200 V ebo lc = 0 7 V lc D. C. 50 A tp = 1 ms 100 A D. C. 50 A ICM If = - l c

Contextual Info: 51E 5 • Ôl3bb71 000377b 070 M S E K G seMIKRDN SEfäKRÖN- INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A , Vbe = - 2 V > CM I II UJ CD > VcBO Ie = lc Units 1200 V 1200 V 1200 V I VcEV Values 7 V lc D. C. 300 A If = - lc D. C. 300 A V ebo = Ib Ptot

Semikron sk 30 dal

Contextual Info: SIE D • Ö13bb71 0 0 0 3 7 0 0 ä^S « S E K G semikron^inF "— s e m ik r d n Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = —2 V ICM = II II o o m o D. C. lc If > V ebo CM I II LU CÛ VCBO > VCEV Values -lc 1200 V 1200 V 1200 v 7 V 30 A tp = 1 ms

Contextual Info: PHILIPS INTERNATIONAL SLE J> • 711DÛ2b GCm33SG 4b2 « P H I N Philips Components BDV64F/64AF/64BF/64CF r"33"^ Data sheet status Product specification date of issue December 1990 PNP Silicon Darlington power transistors DESCRIPTION PINNING - SOT199 PIN 1

KE924503

Abstract: ke92
Contextual Info: BTE D POUEREX INC • TSRMbSl G0QMMS2 1 « P R X m u m * KE924503 Six-Darlington Transistor Module r - Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

BDT65

Abstract: bdt65c bdt64
Contextual Info: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,

t333b

Abstract: ks52
Contextual Info: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax