2N3789
Abstract: SDT3802
Contextual Info: industrial power transistors 130 SILICON PNP TRANSISTORS 15 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE VeB SDT3801 SDT3802 SDT3803 SDT3804 2N3789 2N3790 2N3791 2N3792 TO-66 TO-66 TO-66 TO-66 TO-3 TO-3 TO-3 TO-3 -60 -80 -60 -80 -60 -80 -60 -80 VeE VEB -60
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sdt3801sdt3802sdt3803sdt3804+62n37892n37902n37912n3792-550c1500c
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2N5286
Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT
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2n26572n26582n2877o-111+132n28782n28792n28802n52862n5290solitron2n5740sdt13305sdt3775sdt855022n439s2n56102n6562
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2N5872
Contextual Info: de]ö3hflt,02 ~&i SOLITRON DEVICES INC üDDasflö t \ t ~-33-/7 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 À Aluminum FORMERLY 67 Collector: Polished Silicon
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203mm25mhz200pf2n5872 |
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2N3789
Abstract: 2N3790 2N3791 2N3792 2N5007 2N5009 2N5290 2N5291 2N5312 SDT7909
Contextual Info: 37 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO I M VO LTA G ES D TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO v hFE M IN . I M A X. V GE V CE s V BE(s) V I V *C A I *B A V A 5.0 5.0 5.0 5.0 .50 .50 1.20 1.20 2.0 2.0 .200 .200 90 90 180 2.0
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sdt7909sdt79102n37892n3790+82n37912n37922n5007o-61-12n50092n52902n52912n5312
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SDT7201
Abstract: 2N5740 SDT3109 2n5290 2N5737 SDT7612
Contextual Info: 35 SILICON POWER TRANSISTORS CURREIV T G A IN SATURATION J VO LTA G ES ë> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M AX. V CE *C V CE s V BE(s) V I V 'c . A 'b I A U A 5.0 5.0 5.0 5.0 5.0 5.0 .60 .60 .60 1.50 1.50 1.50 5.0 5.0 5.0 .500
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sdt72012n5740sdt31092n5290+22n5737sdt7612
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TO61
Abstract: 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386
Contextual Info: Device Type VCEO hFE V Min/Max @ I C (A) 2N5007 2N5009 2N5290 2N5291 2N5312 2N5314 2N5316 2N5318 2N5386 2N5621 2N5623 2N5625 2N5627 2N5677 2N5737 2N5738 2N5739 2N5740 2N5853 2N6127 2N6248 SDT3105 SDT3106 SDT3107 SDT3108 SDT3109 SDT3115 SDT3116 SDT3117 SDT3118
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2n50072n50092n52902n5291+72n53122n53142n53162n53182n53862n5621to61
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fast switching pnp transistor 3A 60V
Abstract: 2N5872 SOLITRON DEVICES
Contextual Info: _ 8 3 6 8 6 0 2 _SOI TT r oni n r v / m r g SOLITRON DEVICES INC tmh TS 95D 02889 DE-J ßBbäbOS ODDEflflT I ÄTTÄ[L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PNP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 67 CONTACT METALLIZATION
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203mmfast switching pnp transistor 3a 60v2n5872solitron devices |
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2N5872
Abstract: 2N4909 2n3792 equivalent
Contextual Info: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING C H IP N U M B E R PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 67 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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203mm200pf2n58712n5872+72n37892n37922n49072n4909sdt3801sdt38072n3792 equivalent
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fast switching pnp transistor 3A 60V
Abstract: 2n3792 equivalent 2N5872 2N3789 2N3792 2N4907 2N4909 2N5738 2N5871 SDT3801
Contextual Info: A im © _ ’_ MEDIUM TO HIGH VOLTAGE, FAST SWITCHING -Jolitran ° ^ i c e s ’ ln c CHIP NUMBER IMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 67 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold
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203mmfast switching pnp transistor 3a 60v2n3792 equivalent2n5872+72n37892n37922n49072n49092n57382n5871sdt3801
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