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    TSB41LV06

    Abstract: TSB12LV23
    Contextual Info: TSB41LV06A IEEE 1394a SIX-PORT CABLE TRANSCEIVER/ARBITER SLLS363A – SEPTEMBER 1999 – REVISED NOVEMBER 2000 D D D D D D D D D D D Fully Supports Provisions of IEEE 1394– 1995 Standard for High Performance Serial Bus† and the P1394a Supplement Fully Interoperable With FireWire and


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    tsb41lv06a1394aslls363ap1394a+2tsb41lv06tsb12lv23 PDF

    TSB12LV23

    Abstract: TSB41LV06
    Contextual Info: TSB41LV06A IEEE 1394a SIXĆPORT CABLE TRANSCEIVER/ARBITER SLLS363A − SEPTEMBER 1999 − REVISED NOVEMBER 2000 D Fully Supports Provisions of IEEE 1394− D D D D D D D D D D 1995 Standard for High Performance Serial Bus† and the P1394a Supplement Fully Interoperable With FireWire and


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    tsb41lv06a1394aslls363ap1394a+2tsb12lv23tsb41lv06 PDF

    45VM32160D

    Contextual Info: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


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    is42/45vm32160d32bits-40oc16mx32+4is42vm32160d-6bliis42vm32160d-75bli90-ball45vm32160d PDF

    TRANSISTOR mcr 100-8

    Contextual Info: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault


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    mc33389100ma200ma125kbaud+2mc33388transistor mcr 100-8 PDF

    ba1s

    Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


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    is43lr32400e32bitsfigure3890ball+4-25oc4mx32is43lr32400e-6bleba1s PDF

    S6B1713A15

    Abstract: S6B1713 S6B1713A05-B0CY S6B1713A05-B0CZ S6B1713A15-B0CY S6B1713A15-B0CZ SM 5271 COM132 S6B1713A15-xxXN
    Contextual Info: S6B1713 65 COM / 132 SEG DRIVER & CONTROLLER FOR STN LCD March .2002 Ver. 4.2 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any


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    s6b1713com33com34com35+12com46com47com48com62s6b1713a15s6b1713a05-b0cys6b1713a05-b0czs6b1713a15-b0cys6b1713a15-b0czsm 5271com132s6b1713a15-xxxn PDF

    code A106

    Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
    Contextual Info: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


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    md18r3268256/288mbit32mx18576mb+1032k/32mscode a106md18r3268ag0-cm8md18r3268ag0-cn1md18r3268ag0-ct9md18r326gag0-cm8md18r326gag0-cn1md18r326gag0-ct9serial presence detect samsung 2010marking a106 PDF

    Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


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    ms18r1622288mbit16mx18288mb+116k/32ms PDF

    CI 3060 elsys

    Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
    Contextual Info: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.


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    ks009026com/64segks0090/90-iks0090i+5ci 3060 elsysrs 3060 cjks* i2c driverlcd driver ksseg60 PDF

    SM32200K

    Abstract: IS42SM32200K
    Contextual Info: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


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    is42sm/rm/vm32200k32bits200k-6bliis42sm32200k-75bli+690-ball-40oc2mx32is42rm32200k-6blism32200kis42sm32200k PDF

    IS42RM16160E

    Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
    Contextual Info: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


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    is42/45sm/rm/vm16160e16bits-40oc16mx16+7is42sm16160e-6bliis42sm16160e-75bli54-ballis42rm16160eis42vm16160e-75bliis42vm16160eis42vm16160 PDF

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    is43/46lr16640a16bits16-bit-40oc+764mx16is43lr16640a-5bliis43lr16640a-6bli60-ballis43lr16640ais46lr16640a-5bla1is43lr16640a-6bl PDF

    AK4628AVQ

    Abstract: AK4112B AK4529 AK4628A AKD4628 IEC60958 TDM256
    Contextual Info: ASAHI KASEI [AK4628A] AK4628A High Performance Multi-channel Audio CODEC GENERAL DESCRIPTION The AK4628A is a single chip CODEC that includes two channels of ADC and eight channels of DAC. The ADC outputs 24bit data and the DAC accepts up to 24bit input data. The ADC has the Enhanced Dual Bit


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    ak4628a24bit102db106db+7ms0385-e-00ak4628avqak4112bak4529akd4628iec60958tdm256 PDF

    88128

    Abstract: SST55LD019M ata controller flash disk controller write-verify K793
    Contextual Info: ATA Flash Disk Controller SST55LD019M SST55LD019MHigh-Performance ATA Flash Disk Controller Advance Information FEATURES: • Industry Standard ATA/IDE Bus Interface – Host Interface: 8- or 16-bit access – Supports up to PIO Mode-4 – Supports up to Multi-word DMA Mode-2


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    sst55ld019msst55ld019mhigh-performance16-bitmo-210+984-tfbga-bw-9x9-450mic-284-balls71312s71312-01-00088128ata controllerflash disk controllerwrite-verifyk793 PDF

    EQUIVALENT FOR LV1116N

    Contextual Info: Ordering number : EN8262A EN8263A LV1116N/NV Bi-CMOS IC Surround Processor ICs for Electronic Volume Control http://onsemi.com Overview The LV1116N/NV are sound processor ICs developed for use in TV sets. They incorporate the surround processing functions including AViSS , pseudo stereo function, (L+R) output, and the


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    en8262aen8263alv1116n/nvequivalent for lv1116n PDF

    Contextual Info: Ordering number : ENA1046 EN8263A LV1117N/NV Bi-CMOS IC Surround Processor ICs for Electronic Volume Control http://onsemi.com Overview The LV1117N/NV are sound processor ICs developed for use in TV sets. They incorporate the surround processing functions including AViSS , pseudo stereo function, (L+R) output, and the


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    ena1046en8263alv1117n/nva1046-18/18 PDF

    46LR32640A

    Abstract: Mobile DDR SDRAM
    Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    is43/46lr32640a32bits32-bitis43lr32640a-6bli+690-ball-40oc64mx32is46lr32640a-5bla146lr32640amobile ddr sdram PDF

    IS42SM16800F-75BLI

    Abstract: IS42SM16800F
    Contextual Info: IS42SM16800F Preliminary Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are


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    is42sm16800f16bits-40oc8mx16+2is42sm16800f-75bli54-ball PDF

    Contextual Info: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays


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    idt82v2082772khztbr12/1382v2082 PDF

    Contextual Info: IS66WVE2M16BLL Advanced Information 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several


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    is66wve2m16bll32mbit70nswve2m16bll-70tli48-ball+248-pinmo-207 PDF

    Contextual Info: N32D3225LPAW 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3225LPAW are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


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    n32d3225lpaw32bits PDF

    Contextual Info: N128D1618LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


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    n128d1618lpaw16bits PDF

    Contextual Info: N128D3218LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3218LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


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    n128d3218lpaf232bits PDF

    Contextual Info: IS42RM32400F Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are


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    is42rm32400f32bits90ball-25oc+34mx32is42rm32400f-6bleis42rm32400f-75ble PDF