T3725 Search Results

VP2410

Abstract: vP2410B
Contextual Info: SILICONIX INC 1ÔE D 0254735 0014127 1 CY'Siliconix VP2410 SE R IE S JLJm in c o rp o ra te d P-Channel Enhancem ent-M ode M O S Transistors PRODUCT SUMMARY PART NUMBER TO-92 V BR DSS fDS(ON) (Í1 ) (V) Id (A) PAC KA G E VP2410L -2 4 0 10 -0.18 TO-92 VP241QB

Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance

ZVP2210

Abstract: ZVP2210L
Contextual Info: ^5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE P-channel enhancement mode vertical D M O S FET » F | 7 a a O S 3 3 DDOSflDT h | ~ 95D 05809 D T-37-25 ZVP2210 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown

r9020

Abstract: 1RFR9020 1RFU9020 Diodo t b 9 g DIODO 42 40 028Q irfr9020 irf r9020 T372S FAG 50 diode
Contextual Info: international RECTIFIER " IN T E R N A T IO N A L r e c t i f i e r IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET* TRANSISTORS P -C H A N N E L -5 0 Volt, 0.20 Ohm HEXFET The HEXFET* technology to the keytoim em ettonel Rectaer'a edvanoed lloe o f power F/OSF6T traneialora. Tbo eWcient

VP2020

Abstract: vp2020l
Contextual Info: SILICONIX INC ÔSS473S 1ÛE D 0ümi2S VP2020 SERIES C7SiRcc3nix J.Æ P-Channel Enhancement-Mode MOS Transistors in c o rp o ra te d " T -3 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER Ö V BR DSS fDS(ON) (fl) (V) >D (A) PACKAGE TO-2Q6AC (TO-52)

IRFR9010

Abstract: irfu9010 IRFR9012 IRFU9012 IRFR9010TR HMSC
Contextual Info: he d | Nass4sa ooaaBoa i | Data Sheet No. PD-9.516A I N T ERNATIONAL R E C T IFIER INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRSOIO IRFRS01S IRFU9010 IRFU9Q1S P -C H A N N E L Product Summary - 5 0 Volt, 0.50 Ohm HEXFET

IRFD9010

Abstract: IRFD9012 9460A latest RECTIFIER DESIGN T37Z MO-001 Diode Gfg 33
Contextual Info: HE D § 4flSS4S2 00003=10 3 | Data Sheet No. PD-9.460A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS P-CHANNEL HEXDIP TO R IRFDSOIO IRFDSOI 2 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE -50 Volt, 0.50 Ohm, 1-Watt HEXDIP

IRFD010

Abstract: T3725 IRFD010 application notes LG 72A IRFDQ12 IRFD012 MO-001 Power MOSFET in a HEXDIP package MOSFET C106 F15A
Contextual Info: HE D I 4055455 QQOÔBSb Ì | T-37-25 Data Sheet No. PD-9.464A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS N-CHANNEL HEXDIP I O R IRFD0 1 0 IRFDOi 2 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE 50 Volt, 0.20 Ohm, 1-Watt HEXDIP

IRF 9110

Abstract: FR9110 FU9110 IRFR9111
Contextual Info: HE INTERNATIONAL RECTIFIER D | MÖS5452 QQQÖ324 7 | Data Sheet No. PD-9.519B T-37-25 IOR INTERNATIONAL- RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9110 IRFRS111 IRFU9110 IRFU9111 P -C H A N N E L Product Summary -100 Volt, 1.2 Ohm HEXFET

IRFD9213

Contextual Info: H E I 4055452 0000422 T-37-25 7 | Data Sheet No. PD-9.387F INTERNATIONAL R E C T I F I E R I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

IRFD9213

Abstract: IRFD9210 387F c174 T3725 1RFD9213
Contextual Info: H E I 4055452 0000422 T-37-25 7 | Data Sheet No. PD-9.387F INTERNATIONAL R E C T IF IER I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

pj 88 diode

Abstract: pj 59 diode irfu9120 pj 84 diode IRFR9120 irfr 9120 irfu9121 IRFR9121 irff* p-channel hexfet C82 diode
Contextual Info: HE D | MflSSMSS Q0Qfl332 fc» | Data Sheet No. PD-9.520B INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFR9120 IRFR9121 IRFUS120 IRFU0121 P -C H A N N E L -100 Volt, 0.60 Ohm HEXFET

irfu9210

Abstract: irfu9212 DIODE C93 C92 diode IRFR9210 IRFR9212
Contextual Info: h e o | x a s s ts a o o o h h o s | Data ^ INTERNATIONAL R E C T I F I E R Nq pD. 9 H 1 B T-37-25 INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS210 IRFRS21S IRFUS210 IRFU0212 P-CHANNEL -200 Volt, 3.0 Ohm HEXFET

Contextual Info: 35E D • 023^320 0017305 0 « S I P SIPMOS P Channel MOSFET SP0610T SIEMENS/ SPCL-. SEMICONDS _3.5" • SIPM OS - enhancement mode • Drain-source voltage Voi = -60V • Continuous drain current I D = -0.13A • Drain-source on-resistance

IRFD9110

Abstract: IRFD9113 IRFDS110
Contextual Info: H E I IN T E R N A T IO N A L M f lS S M S a 0000410 □ | Data Sheet Nô. PD-9.389F T-37-25 R E C T IF IE R IN T E R N A T IO N A L IO R R E C T IF IE R HEXFET* TRANSISTORS IRFDS1 1 Q IRFDS1 1 3 P-CHANIMEL HEXDIP 1-WATT RATED POW ER M O SFETs 4 PIN, DUAL-IN-LINE P L A S T IC PACKAGE

irfd9020

Abstract: IRFD9022
Contextual Info: H E D § 4Ö55M52 0000404 S | Data gheet No pD.9.462A T-37-25 INTERNATIONAL RECTIFIER in t e r n a t io n a l r e c t i f i e r IÖ R HEXFET TRANSISTORS IR F D 9 0 2 0 P-CHANNEL ^PolRFDSOSS HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE

VPDS06

Abstract: TP0610T
Contextual Info: SI LI CO NI X INC IfiE D Ö25473 5 0014051 C X S ilic o n ix TP0610 SERIES Jm W in c o r p o r a te d P-Channel Enhancement-Mode MOS Transistors T '- 3 ~ 7 - - Z 5 ' PRODUCT SUMMARY PART NUMBER BOTTOM VIEW TO-92 V BR DSS fDS(ON) (V) (« } T Id (A) PACKAGE

ina 124

Abstract: CT2525ALN "beryllium oxide" HR0500 ct2335 SMT3725ALN SC0066M
Contextual Info: SES 1 Index Tedmolo^ii L Product Index EM C P art Num ber Description Pow er Level W Substrate M aterial M ax VSWR M ax Frequency (G Hz) Page N um ber TVA Series Thermopads 2 Alum ina 1.30:1 6 GHz 12 M TVAXXXXN XX Thermopads 0.2 A lum ina 1.30:1 18 GHz

IRFD9110

Abstract: A15J IRFD9113 rectifier s4 case R-1
Contextual Info: l ie o I Mös sHs a aoaama □ | Data Sheet Nó. PD-9.389F T-37-25 IN TER NA TIO NA L R E C T IF IE R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRFDS1 1 0 IRFD0 1 1 3 P-CHANNEL HEXDIP* 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

IRFD9223

Abstract: LIC HD 13 IRFD 110 JA20 irfd9220
Contextual Info: h e o I M fls s 4 s a a a a ä M ^ ö a | Data Sheet No. PD-9.439A T-37-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEX FET TRANSISTORS IRFDS22Q IRFD9SS3 P-CHANNEL H EXD IP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE

IRF09120

Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
Contextual Info: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP

9517A

Abstract: irf 4110 irfu9022 IRFR9020 IRFR9022 IRFU9020 7n20 LG 57A 1U40
Contextual Info: HE 0 | 4Û55452 QQQûaib ü T-37-25 Data Sheet No. PD-9.517A | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRS020 IR F R 9 0 S S IR F U 9 0 2 0 IR F U 9 Q S 2 P -C H A N N E L Product Summary -50 Volt, 0.20 Ohm HEXFET

IRFR9220

Abstract: irfu9220 irfu9222 sis 968 dc-dc 522B DNMC IRFR9222 OL-10S 46HA .46HA
Contextual Info: HE D | 4BS5452 0005340 □ | Data Sheet No. PD-9.522B INTERNATIONAL RECTIFIER T-37-25 INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dvAdt RATED HEXFET TRANSISTORS IRFR9SSO IRFR92S2 IRFU9SSO IRFU0222 P-CHANNEL Product Summary -200 Volt, 1.5 Ohm HEXFET

BSS84 siemens

Contextual Info: BSE D • fl23b350 0017137 0 « S I P SIPMOS P Channel M OSFET B SS 84 SIEMENS/ SPCL-, SEMICONDS T'37-aS’ • SIPMOS - enhancement mode • Drain-source vottage Vfc» = -50V Io = -0.13A • Continuous drain current • Draln-source on-resistance • Total power dissipation