ZVP2210
Abstract: ZVP2210L
Contextual Info: ^5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE P-channel enhancement mode vertical D M O S FET » F | 7 a a O S 3 3 DDOSflDT h | ~ 95D 05809 D T-37-25 ZVP2210 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown
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zvp2210t-37-25zvp2210bzvp2210l+3g-315722gs33g-316
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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t0-92options4206azvn4206czvn4206e+15zvn4306atn2106k1vn2210n3tn0606n3tn0606n6mosfet cross referencepj 929 diodepj 1229 diodebss250vn0109n5pj 66 diodepj 929bss295 "direct replacementbss295 "cross referencepj 69 diode
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L50Q
Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50
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ot-23zvp3210mzvp2210mzvn3210m+5zvn3210ll50qzvn1320bzvn2210lzvn311
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ZVP 210
Abstract: ZVP2210B zetex zvp ZVP P-channel
Contextual Info: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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zvp2210bzvp2210lo-220zvp 210+2zetex zvpzvp p-channel
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