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Contextual Info: PD64MX6408 XXX D2X, PD128MX6416 (XXX) D2X SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • · · · · · · · · · · · · 184 pin dual in-line memory modules (DIMM) Fast data transfer rates PC2700, PC3200 Utilizes DDR333 and DDR400 DDR SDRAM components
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pd64mx6408pd128mx6416pc2700pc3200+6ddr333ddr400512mb64mx64128mx648125us
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R9522
Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
Contextual Info: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1
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s773etsirf9522irf9523r9522+5r9523t-37-z5o-220-100vg-d-s to-92
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DD256M
Abstract: T37Z TSOP 66 Package thermal resistance
Contextual Info: 1 GigaBit Stacked DDR1 SDRAM DD54E, DD54ER 256M x 4 Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and
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dd54edd54erddr400dd256m42u3ba+43887x132dd256mt37ztsop 66 package thermal resistance
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ZVP 210
Abstract: ZVP2210B zetex zvp ZVP P-channel
Contextual Info: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
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zvp2210bzvp2210lo-220zvp 210+2zetex zvpzvp p-channel
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T37Z
Abstract: DD128 TSOP 66 pin Package thermal resistance DD128M82U3BB6 267-Mbps
Contextual Info: 1 GigaBit Stacked DDR1 SDRAM 128M x 8 DD55E, DD55ER Features • Low Profile 66 Ball Two-High Stacked Die micropede BGA • 77% Space Savings Over Two 66 Pin TSOP Packages • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and
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dd55edd55erdd54erddr400+7dd128m82u3ba3887x132t37zdd128tsop 66 pin package thermal resistancedd128m82u3bb6267-mbps
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Q533
Abstract: G307 TH 2053.3 ZVP2206L
Contextual Info: "tS PLESSEY SENICOND/DISCRETE 7 2 2 0 5 3 3 P L E S S E Y D E ^ 7 2 5 Q533 95D S E M I C O N D / D I S C R E T E T P-channel enhancement mode vertical D M O S FET ' □GGSflDl 05601 37'25 ZVP2206 FEATURES • Com pact geometry • Fast sw itching speeds •
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DM 024
Abstract: T37z DDR266 DDR333 WV3EG265M72EFSU-D4 512mb sodimm pc2700 200 pin samsung
Contextual Info: White Electronic Designs WV3EG265M72EFSU-D4 ADVANCED* 1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA FEATURES DESCRIPTION Unbuffered 200-pin SO-DIMM , small-outline, dualin-line module The WV3EG265M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR
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wv3eg265m72efsu-d42x64mx72200-pinwv3eg265m72efsu+10512mb64mx8pc-2100pc-2700133mhzdm 024t37zddr266ddr333512mb sodimm pc2700 200 pin samsung
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