T07 TRANSISTOR Search Results

germanium af transistors

Abstract: OC171 OC170 AF126 AF124 germanium transistors PNP AF114 AF127 AF125 603F
Contextual Info: PNP Germanium Transistors PNP Germanium V H F Diffused Transistors in T 0 7 and T 0 7 2 metal cases Type C h aracte ristics @ 2 5 ° C M a x im u m ratings Cai se V BV£B O V 'c m mA b v cbo 114 115 116 117 124 125 126 127 T07 T07 TO 7 T072 T072 T072 T072

AJB-4

Abstract: BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l E3122
Contextual Info: SIEM ENS ñ23SbüS 00*12701 T07 H PROFET BTS 432 12 Smart Highside Power Switch Product Summary Features * * * * * * * * * * * * Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output Vbb- V buT Avalanche Short-circuit protection

t07 transistor smd

Abstract: smd transistor 2T6 SMD Transistor t07
Contextual Info: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •

t07 transistor

Contextual Info: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile

transistor SMD t07

Abstract: SMD Transistor t07 BTS 302 BTS 410 E2 E3043 STT 3 SIEMENS transistor t07 circuit diagram obd diagnostic bts 410d2 SMD code E2 BTS410E2
Contextual Info: • flE35b05 OOfllMBO T07 ■ SIEM EN S PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •

SLA6023 application

Abstract: SLA6024 SLA5065 SLA5064 SLA5060 application SLA5073 SLA6026 SLA5013 SLA5031 pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: Bulletin No T07 EB0 Mar.,2001 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the

sma4033

Abstract: transistor SMD t07 SLA6022 sla6024 circuit STA471A SLA4070 toshiba semiconductor catalog SLA5007 DARLINGTON TRANSISTOR ARRAY P-channel 200V mos fet
Contextual Info: Bulletin No T07 EA0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the

BC817

Abstract: bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
Contextual Info: 23Ö33TM □□□□73 4 T07 • BC817 BC818 DÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P—N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

2N725

Abstract: L51A BSV20A DM-58 2N625 BSX86 fr 153/30 r T072 UC340 UC803
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 110. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SA143

Abstract: CK676 CK14A 2SA17 2N371 2N544 ck17a 2N370/33 2N544/33 2SA13
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SK19Y

Abstract: C682 2SK19GR X70a FSP400 40468 C621 K1202 C682A C684
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N2672

Abstract: 2SA144 2N1178 2N2654 2SA234 2SA235 2N1515 AH-61 transistor 2sA144 2SA435
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol

transistor 2sA144

Abstract: 2SA234 2SA144 2SA235 TRANSISTOR r73 2N2672 2SA135 2N1516 2N2654 dm-58
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SA143

Abstract: 2SA94 transistor 2sa143 2N1673 2N370 MT14 ck17a 2N372/33 2SA80 2V464
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SA94

Abstract: 2SA143 2N1673 2g396 2SA297 2SA80 2V464 2V465 2V482 CK13
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S -IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type num ber non-JED EC whose characteristics are not the same. i This m anufacturer-identifying symbol

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

transistor t07

Abstract: t07 transistor
Contextual Info: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R-|=4.7kil _GL ET Ordering Code Pin Configuration XKs UPON INQUIRY 1 =B Package II CO O Marking BCR 519 LU II CVJ

transistor t07

Abstract: Transistor B 886 t07 transistor PDTA144 PDTA144E
Contextual Info: Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA144EU FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ii each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS

Contextual Info: QST7 Transistors Low frequency amplifier QST7 !External dimensions Units : mm !Application Low frequency amplifier Driver 2.8 0.85 2.9 (3) (2) 0.16 0.4 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) (5) (6)

Contextual Info: US6T7 Transistors Low frequency amplifier US6T7 6 (1) 0.2 1.7 1.3 (2) 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 2.0 (3) (5) 0.85Max. 0.3 !Features 1) A collector current is large. 2) VCE(sat) ≤ −370mV At IC =− 1A / IB = −50mA (4) 0.65 0.65 !External dimensions (Unit : mm)

MA117

Abstract: NKT275 NKT275A TS-601 2SA250 2SB495 AF107 GET114 GET538 XC101
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2G417

Abstract: 2SB135 TK27A 2sb115 AFY15 OC3H TI-363 324T1 TK21A 2N199
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol

A21E

Abstract: ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 Q62702-F1104 transistor ZO 103 MA
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in a n te n n a an d te le c o m m u n ic a tio n s svstem s to 2 G H z ud at collector currents from 10 mA to 70 mA. / - \ • Hermetically sealed ceramic package.