2N371 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

fr 3707 z

Abstract: fr 3709 z fr 3709 2N3711 2N3707 a5t3707 2n3711 TY A5T3711
Contextual Info: TYPES 2N3707 THRU 2N3711, A5T3707 THRU A5T3711, A8T3707 THRU A8T3711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 5 , M A R C H 1973 S I L E C T t T R A N S IS T O R S Ï • Ideal for Low-Level Amplifier Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N3792

Abstract: 2N3791 2N3715 2N3716
Contextual Info: SavantIC Semiconductor Product Specification 2N3791 2N3792 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications

2N3716

Contextual Info: SavantIC Semiconductor Product Specification 2N3716 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package APPLICATIONS ·They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline TO-3 and symbol

Contextual Info: m 2N3715 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3715 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS lc 10 A Ib 4.0 A MAX. BOTH e n d O m < 60 V P diss 150 W @ T C = 25 °C Tj -65 °C to +200 °C

2N3719

Contextual Info: 2N3719 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

2N3715X

Contextual Info: 2N3715X Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3171

Abstract: 2N3022 2N3195 2N3202 2N3183 2N3025 2N3026 2N3172 2N3719 2N3021
Contextual Info: industrial power transistors 128 SILICON PNP TRANSISTORS 5 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

2N3792

Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

2N3716

Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
Contextual Info: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP

2N3711

Abstract: transistor 2N3711
Contextual Info: 2N3711 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3711 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE TO- 92 MAXIMUM RATINGS SO mA V o m Ic SO V p d is s SeO mW @ Ta = 25 0C Tj -e5 0C to &15O 0C

Contextual Info: 2N3716 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3716 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 10 A Ib 4.0 A 80 V 150 W @ T e # 25 ° C Tj -65 0 C to +200 0 C Ts t g -65 0 C to +200 0 C qje 1.17 0 C/W

Contextual Info: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS

2N3715

Abstract: 2N2716 2N3713 2N3714 2N3716 lc50a
Contextual Info: Data Sheet 2N3713 2N3714 2N3715 2N3716 Central" Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors d e s c r ip t io n

2N3716

Abstract: 2N3713 2N3714 2N3715 2N3789 2N3792
Contextual Info: SILICON NPN POWER TRANSISITORS NPN 2N3713 Thru 2N3716 . designed for medium-speed switching and amplifier applications FEATURES * * * * Gain Ranged Specified at 1A and 3A. Low VCE sat : typically 0.5 V @ lc=5 A , lB=0.5A Excellent Safe Operating Areas Complementary PNP Types Available 2N3789 thru 2N3792

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

044H11

Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V

2n4058

Abstract: 2N3707 2N4062 2N4061 2N3710 2N370 2N3708 2N3709 ic 4058 2N4059
Contextual Info: 2N 3 7 0 7 through 2N 3711 2N 4 0 5 8 through 2N 4062 NPN. . PNP SILICON AF SMALL SIGNAL TRANSISTORS I THE 2N3707 THROUGH 2N3711 NPN AND 2N4058 THROUGH 2N4062 (PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED

Contextual Info: 2N3715+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3713

Contextual Info: _ 61C 012 79 D t.1 DE J ñ 3tflb0 a Q0D 1E7 T D ^ SOLITRON DEVICES INC olitron Devices, Inc. S P E C I F I C A T I O N S MAXIMUM RATINGS Voltage, Collector to Base VCB0 NO.: 2N3713 TYPE: NPN E P I BASE C A S E: T O -3 80 V 60 V 7.0 V 10 A 4 .0 A 1.17