2SB115 Search Results

2SB1157

Abstract: 120-80 2sb115 2SD1712
Contextual Info: Inchange Semiconductor Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING

2SB1154

Abstract: 2SD1705
Contextual Info: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING

2SB1157

Abstract: 2SD1712
Contextual Info: JMnic Product Specification 2SB1157 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1712 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

251C

Abstract: 2SB1156 2SD1707
Contextual Info: Power Transistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1707 U nit : ram 5 2 max. . 15.5max- • Features ' 6.9m in. "U.2 • Low collector-eim itter saturation voltage VcEisao • Good linearity of DC c u rre n t gain (hFE)

pnp 222A

Abstract: 2SB1154 2SB1254 2SD1705
Contextual Info: Power Transistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Power Switching Complementary Pair with 2S D 1705 Package Dimensions . - U n it : mm 5.2m ax. . 15.5m ax. • Features s “ ^ 3 .2 6.9m in. I- • Low collector-eim itter saturation voltage VcEtsatj

2SB1155

Abstract: 2SD1706
Contextual Info: SavantIC Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1706 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications

2SB1158

Abstract: 2SD1713
Contextual Info: SavantIC Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SB1159

Abstract: 2SD1714
Contextual Info: SavantIC Semiconductor Product Specification 2SB1159 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SB1155

Abstract: 2SD1706
Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SD1712

Abstract: 2SB1157
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1157 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1712 APPLICATIONS

2SB1156

Abstract: 2SD1707
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1156 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -8A ·Complement to Type 2SD1707

Solenoid Driver 2a

Abstract: 2SB1151 2SD1691
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1151 DESCRIPTION •High Collector Current -IC= -5A ·Low Collector Saturation Voltage : VCE sat = -0.3V(Max.)@ IC= -2A ·Complement to Type 2SD1691 APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid

2SB1158

Abstract: 2SD1713
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1158 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1713 APPLICATIONS

Contextual Info: Power Transistors 2SD1706 2SD1706 Silicon NPN Epitaxial Planar Type Power Switching Complementary Pair with 2SB1155 • Features Package Dimensions • Low collector-emitter saturation voltage Vce<mo • Good linearity of DC current gain (Iife) • High collector current (Ic)

Contextual Info: Power T ransistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1705 •Features • Low collector-eim itter saturation voltage • Good linearity of DC c u rre n t gain Unit : mm 5.2max. ^ 3 .2

2SD1707

Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: UTC 2SD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation: Pc=1.5W Ta=25℃ *Complementary to 2SB1151 1 TO-126C 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage

2sb115

Abstract: 2SB1158 2SD1713 2SD171
Contextual Info: Inchange Semiconductor Product Specification 2SB1158 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1713 ・High fT ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING

2SB1151

Abstract: 2SD1691
Contextual Info: PNP SILICON POWER TRANSISTOR 2SB1151 DESCRIPTION The 2SB1151 is a Low VcE sat transistor which has a large current PACKAGE DIMENSIONS capability and wide SOA. in millimeters (inches) It is suitable for DC-DC converter, or driver of solenoid or motor. FEATURES

2SD1705

Abstract: 2SB1154 2sd170
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1154

Abstract: 2SD1705
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features

2SB1155

Abstract: 2SD1706
Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit