2SD1705 Search Results

2SB1154

Abstract: 2SD1705
Contextual Info: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING

Contextual Info: Power T ransistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1705 •Features • Low collector-eim itter saturation voltage • Good linearity of DC c u rre n t gain Unit : mm 5.2max. ^ 3 .2

2SD1705

Abstract: 2SB1154 2sd170
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1154

Abstract: 2SD1705
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2

2SB1154

Abstract: 2SD1705
Contextual Info: SavantIC Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications

2SB1154

Abstract: 2SD1705
Contextual Info: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB1154

Abstract: 2SD1705
Contextual Info: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SD1705

Abstract: 2SB1154
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 φ 3.2±0.1 • Absolute Maximum Ratings TC = 25°C

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

2SB1154

Abstract: 2SD1705
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1154 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -6A ·Complement to Type 2SD1705

2SD1705

Abstract: 2SB1154
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C

2SD1705

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2

Contextual Info: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SB1154 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1705 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Power Transistors 2SD1705 2SD1705 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Sw itching C om plem entary Pair with 2SB1154 • Features Iife / 6.9min. 1 cu- - r ii • L o w c o l l e c t o r - e m i t t e r s a tu r a t io n v o lta g e (V c e m )

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SB1154 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1705 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current

2SB1154

Abstract: 2SD1705
Contextual Info: Inchange Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140