2SD170 Search Results

2SB1154

Abstract: 2SD1705
Contextual Info: JMnic Product Specification 2SB1154 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1705 ・Low collector saturation voltage ・Satisfactory linearity of hFE APPLICATIONS ・For power switching applications PINNING

2SB1155

Abstract: 2SD1706
Contextual Info: SavantIC Semiconductor Product Specification 2SB1155 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1706 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications

2SB1155

Abstract: 2SD1706
Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB1156

Abstract: 2SD1707
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1156 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -8A ·Complement to Type 2SD1707

Contextual Info: Power Transistors 2SD1706 2SD1706 Silicon NPN Epitaxial Planar Type Power Switching Complementary Pair with 2SB1155 • Features Package Dimensions • Low collector-emitter saturation voltage Vce<mo • Good linearity of DC current gain (Iife) • High collector current (Ic)

Contextual Info: Power T ransistors 2SB1154 2SB1154 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1705 •Features • Low collector-eim itter saturation voltage • Good linearity of DC c u rre n t gain Unit : mm 5.2max. ^ 3 .2

2SD1707

Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

2SD1701

Abstract: PA33
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SD1701 The 2SD1701 is NPN silicon epitaxial darlington transistor designed fo r pulse m otor driver, printer driver, solenoid driver. FEATURES • High DC Current gain. • Zener Diode between Collector and Base fo r Absorbing

PT 6062A

Abstract: EL1202 1B2 zener diode 2SD1702 IEI-1213 MEI-1202 MF-1134 1702 NPN transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1702 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 17 02 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. FEATURES PACKAGE DIMENSIONS in millimeters

2SD1705

Abstract: 2SB1154 2sd170
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1154

Abstract: 2SD1705
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features

2SB1155

Abstract: 2SD1706
Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage

2SD1705

Abstract: 2SB1154
Contextual Info: Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 Parameter

2sd1707

Abstract: 2SB1156
Contextual Info: Inchange Semiconductor Product Specification 2SB1156 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1707 ・Low collector saturation voltage ・Large collector current APPLICATIONS ・For power switching applications

2SD170

Abstract: lm 7914 2SD1700 10mit
Contextual Info: zr—S7 • h S ilic o n T ra n s is to r 2SD1700 N P N :n V ^ *!•£§ 4# W i t 800 * « « r iig - n - 0 m A iT - '^ r ih F E ^ " ^ ^ F K 7 A V # ii i ! mm ( ? " - 'J > h > « * S ) O fiV c E ( s a t) - t" to * Ê * * lt* 5 Ë fê ( T a = 25 °C ) m

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1154 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2

Contextual Info: Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 Unit: mm • Features Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE Large collector current IC

2SB1154

Abstract: 2SD1705
Contextual Info: SavantIC Semiconductor Product Specification 2SB1154 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1705 ·Low collector saturation voltage ·Satisfactory linearity of hFE APPLICATIONS ·For power switching applications

2SB1155

Abstract: 2SD1706
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1155 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -7A ·Complement to Type 2SD1706

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1707 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current

2SB1154

Abstract: 2SD1705
Contextual Info: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

0118MF

Abstract: 2SD1700
Contextual Info: NPN SILICON TRANSISTOR 2SD1700 DESCRIPTION The 2SD1700 is NPN silicon epitaxial darlipgton tran­ sistor designed for pulse motor driver, printer driver, PACKAGE DIMENSIONS solenoid driver. FEATURES in millimeters inches • High DC Current Gain • Zener Diode between Collector and Base for Absorb­

2SB1154

Abstract: 2SD1705
Contextual Info: Power Transistors 2SB1154 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1705 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)