2SA133 Search Results

2SA1332

Contextual Info: JMnic Product Specification 2SA1332 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High VCEO APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base

2SA1333

Abstract: nc02
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1333 Silicon PNP P o w e r Transistors DESCRIPTION • With MT-200 package • High power dissipation APPLICATIONS • A u d io a n d g e n e ra l p u rp o s e a p p lic a tio n s PINNING see Fig.2 PIN DESCRIPTION

M338

Abstract: J300j nj037 2SA1338 2SC3392 marking al WA1 marking M338 NPN
Contextual Info: Ordering num ber:EN 1 4 2 1 A 2SA1338/2SC3392 No.1421A SANYO PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications I Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fT

2SA1332

Abstract: ft260
Contextual Info: SavantIC Semiconductor Product Specification 2SA1332 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High VCEO APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

2SA1337

Abstract: 2SA1031
Contextual Info: HITACHI 2SA1337 SILICON PNP EPITAXÍAL LOW FREQUENCY LOW NOISE AMPLIFIER HF AMPLIFIER .0.UP.1 1. Em ill« 2. C o iltcto r 3. B»sc D ím c n s io fii in tn m (SPAK) I ABSOLUTE MAXIMUM RATINGS (Ta=25aC) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SA1337 Symbol

2SA1338

Abstract: marking ay marking al 2SC3392
Contextual Info: Ordering number:EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V. · Large current capacitiy and high fT.

2SA1339

Abstract: 2sc3393 mt 1392
Contextual Info: Ordering number:EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions • Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO= – 50V.

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1330 HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FE A TU R ES • High Voltage: V c e o = —200 V • High DC C u rrent Gain: hpE = 90 to 450 • C om plem entary to 2SC3360 A B S O LU T E M A X IM U M R A T IN G S

50N240

Abstract: JE9093C LOW-POWER SILICON PNP HSE194
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30

2SA1332

Abstract: LC-01A
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1332 Silicon PNP P o w e r Transistors D E S C R IP T IO N • W ith T O -22 Q F a package • H ig h V ceo A P P L IC A T IO N S • P o w e r a m p lifie r a p p lic a tio n s • D riv e r s ta g e a m p lifie r a p p lic a tio n s

Contextual Info: Ordering num ber:EN4495 _FP202 PNP/NPN Epitaxial Planar Silicon Transistor No.4495 Push-Pull Circuit Applications F eatu res • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. • The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the

Contextual Info: Ordering n u m b e r:E N 4 4 9 5 SAXYO No.4495 FP202 PNP/NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications F eatu res • Composite type with 2 transistors PNP and NPN contained in one package facilitating high-density mounting. • The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the

2SA1301 TOSHIBA

Abstract: da 1191 2sa970 Toshiba 2SB754 2SA904A 2SA1038 2Sa1173 2SA1323 2SB646 2SA1782
Contextual Info: - 24 Si - tt « € Manuf- B S 5 a a h h = SANYO » 2SA1115 * TOSHIBA $ m b NEC ÍL HITACHI 1onn 2SA1782 2SA1048 2SA1782 2SA1048CL 3t 3? X 3Ë K «£ « T -y-viry 0 3Ï 0 ÍL B ÍL 0 ÍL 2SA1249 2SA1162 2SA1337 2SA1220A 2SA812 ZSB631K 2SB827 2SB817 2SA1207

2SA1338

Abstract: 2SC3392 ITR05058
Contextual Info: Ordering number : ENN1421B 2SA1338/2SC3392 SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SA1338 / 2SC3392 High-Speed Switching Applications Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO= – 50V.

2SA1031

Abstract: 2SA1337 Hitachi DSA00396
Contextual Info: 2SA1337 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • HF amplefier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1337 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V

2SC3393

Abstract: 2SA1339
Contextual Info: 2SA1339 / 2SC3393 Ordering number : EN1392C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1339 / 2SC3393 High-Speed Switching Applications Features • • • • Ultrasmall-sized package permitting sets to be smallsized,slim. High breakdown voltage : VCEO= – 50V.

Contextual Info: 2SA1335 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)120 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1.0m

2SA1333

Contextual Info: SavantIC Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1338

Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1338 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Large current capacitiy and high fT. 0.55 High breakdown voltage : VCEO=-50V. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process.

Contextual Info: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V

IC LA 3361

Abstract: AN713 S904 ic 3361
Contextual Info: Ordering number : EN 3217 2SA1331/2SC3361 N o .3 2 1 7 P N P /N P N E p ita x ia l P la n a r S ilic o n T r a n sisto r s High-Speed Switching Applications F e a tu r e s • F a st sw itc h in g sp eed • H ig h b rea k d o w n v o lta g e • S m a ll-siz e d p a c k a g e p e r m ittin g th e 2 S A 1 3 3 1 /2 S C 3 3 6 1 -a p p lie d s e t s to be m ad e sm a ll an d slim

MARKING AL

Abstract: 2SA1338
Contextual Info: ¡ Ordering number EN 1 4 2 1 A J SA S.YO 2SA1338/2SC3392 N0 . 14 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Adoption of FBET process High breakdown voltage: VCEO= - 50V Large current capacity and high fi>

Contextual Info: Product specification 2SA1330 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 1 0.55 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector