T0220B Search Results

Contextual Info: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

I670

Contextual Info: ¿»etír 5- H ì M L 2005 003138 jr 2 5 1091 o?- 5V - 200MA MONOLITHIC VOLTAGE REGULATOR v -¿va? VS*! H -i¡ FEATURES T ' * LOW INPUT VOLTAGE REQUIREMENT * LOW OUTPUT IMPEDANCE 1 . Input * OUTPUT SHORT CIRCUIT PROTECTION 2. Output 3. Ground * HIGH TEMPERATURE STABILITY

2SA816

Abstract: 2SC1626 2SC16
Contextual Info: 2SA816 •2SC1626 PNP . NPN SILICON PLANAR EPITAXIAL POWER TRANSISTORS CASE T0-220B THE 2SA816 PNP AND 2SC1626 (NPN) ARE SILICON PLANAR EPITAXIAL COMPLEMENTARY PAIR SPECIALLY DESIGNED FOR THE DRIVER STAGES OF 30-50W HI-FI AMPLIFIERS. THEY ARE ALSO SUITABLE FOR MEDIUM SPEED

BD 242 transistors

Contextual Info: BD 242 • BD 242 A • BD 242 B FNP SILICON EPITAXIAL BASE POWER TRANSISTORS "% ""m m ' w W . CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,

PNP 2SD

Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055

FET BFW 43

Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
Contextual Info: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

T0-220B

Abstract: pj30 241B BD241 BD241A BD241B 241a
Contextual Info: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO

TIP30 BCE

Abstract: tip30c TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B HFE4015
Contextual Info: TIP30 TIP30A IIHMUts I irou o CCMPLÎMENIAKÏ S I L I C E l’ITAXIAL-BASE POWEH THANSISTOIiS IN/IICRO ELECTRONICS CASE T0-220B THE TIP29 S E R IE S NPN AND T I P 30 S E R IE S (PN P) ARE COMPLEMENTARY SILICO N E P IT A X IA L BASE POWER TRANSISTORS DESIGNED EOR P0W£R A M P L IF IE R S AND

BD242B

Abstract: 241B BD242 BD242A BOX69477 BD 242 transistors
Contextual Info: BD 242 • BD 242 A ■ BD 242 B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS -Cf- *$ # 5 “ < V?.,. 4 & - 1 zj: ' 4 ! ì sf* 3 g, ’ " CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT

TIP30B

Abstract: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30C tg425
Contextual Info: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWEK TRANSISTORS ei— EOTRorsiiGS m ic r o CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND

bd 241a transistor

Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A

45C8

Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
Contextual Info: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0

TO220B

Abstract: TO-220B 45V PNP 2A & 1.5A MH8501 2N3055 2N 6292 TO2208 MH8222 3055 3,5A METRIX+MX+220B
Contextual Info: Power Tron/i/tor/ T0-220B T O -3 r M a x im u m R a tin g s E le c tric a l C h a ra c te r is tic s @ T c - 2 5 ° C T Y P E NO. NPN PN P PD lC BVc b O LVc e o LVc e R LV Ce v b v ebo •CEX h F E @ V CE @ lc m in . /m a x . @ T c = 2 5 °C V C E s a t @ t c / ' B

Contextual Info: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS IN/IICRO ELECTRONICS CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ABE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED EOR POWER AMPLIFIERS AND

241A

Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
Contextual Info: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

2SD5703

Abstract: 2sd 209 l 2N6883 638s IC 638S T1P61 BD223 CX704 2n6125
Contextual Info: T- SEMICONDUCTORS INC OTE S | 813tUS0 0 D M 2 6 2 4 | S3 -fi Power Transistors •c D E V IC E M ax v CEO M ax A v hF E M in /M a x ?f l ç P O L A R IT Y v C E (sa t M ax fti Iq »T M in p D (M ax) T C =25°C W A V A M Hi PACK­ AGE 2N3054 2N3055 2N3055SD

bc 945

Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
Contextual Info: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549

ISO220

Abstract: MB39A132 ML2005 ML2005C ML2005P 38b3
Contextual Info: öeffr- sSEP 2 5 0& M L 2005 003138 1991 £ Jjjsra 5V - 200MA MONOLITHIC VOLTAGE REGULATOR >1^1 rH r-vJ l c n . 1 = = | i .j: jj J f r ~ X: CyiSE TO-59 FEATURES TP0-220B ' * LOW INPUT VOLTAGE REQUIREMENT 1. Input 2. Output 3. Ground * LOW OUTPUT IMPEDANCE