BD535 Search Results

BD533

Abstract: BD534 BD535 BD536 BD537 BD538
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD533, 535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications

BD537

Abstract: BD535 db536 BD533 BD538 BD536 BD534 BD53
Contextual Info: BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON POWER TRANSISTORS • BD534, BD535, BD536, BD537 AND BD538 ARE STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec

8D534

Abstract: BD538 8D536 B0535 8C407 BD535B BD537B motorola BD534
Contextual Info: MOTOROLA SC {XSTRS/R F> T b 7asM _q oaat.il ? 96D 80 6 1 1. 6 3 6 7 2 5 4 . MOTOROLA SC X S T R S / R F • 3 2 > -c2 / MOTOROLA m SEMICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . . designed for use in general purpose amplifier and switching

Contextual Info: -r-33-ôl BD533, BD534, BD535, BD536, BD537, BD538 HARRIS SEMICOND SECTOR 5bE J> • Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number iz3 6 43G5571 Q04Db7S 3^1 IHAS TERMINAL DESIGNATIONS General-Purpose Medium-Power Types for Switching and Amplifier Applications

BD534

Abstract: BD53B BD538 bd536 TRANSISTOR 536 B0533 TRANSISTOR BD538 fe 536 transistor b 536
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to B0533, BD535 and BD537 respectively ABSO LU TE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BD534 Rating

BD534 G

Abstract: 8053 BD533 BD534 BD535 BD536 BD537 BD538
Contextual Info: DIL BD533,535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MIN DIM A G

BD535

Abstract: BD533 BD534 BD536 BD537 BD538
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD533, 535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS

D536

Abstract: BD536 D538 BD535B BD537
Contextual Info: SGS-THOMSON BD533/5/7 BD534/6/8 M ^mi©ïi@[il gS COMPLEMENTARY SILICON POWER TRANSISTORS . BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec

BD533

Abstract: BD537 TRANSISTOR BD533 BD534 BD535 BD536 BD538 101b1 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD535 60 V : BD537

BD536 equivalent

Abstract: B0536 BD535 equivalent BDB38 80614 Motorola 8061 b0538 8D535 BD638 8053
Contextual Info: MOTOROLA SC ÍXSTRS/R F> ^ 6367254 MOTOROLA SC XSTRS/R P E 1 ^ 3 1 . 7 551* QQflQ b l l 96D F 8061 1 D 7 z J3 - J!- 3 2 > - c 2 / MOTOROLA SEM ICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Contextual Info: BD533, BD535, BD537 BD534, BD536, BD538 DIL BD533,535,537 BD534,536, 538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88

BD53B

Abstract: bd536 BDS34 BD538
Contextual Info: BD533, BD534, BD535, BD536, BD537, BD538 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number 1236 TERM INAL DESIGNATIONS o General-Purpose Medium-Power Types for Switching and Amplifier Applications t : Features: • Low saturation voltages

Contextual Info: ZjJ C T C O U l l i n i i c n i l d ' I n U m O U BD533/BD534 BD535/BD536 BD537/BD538 I l iL !O ra @ [M flO S EPITAXIAL-BASE NPN/PNP D E S C R IP T IO N The BD533, BD535 and BD537 are silicon epitaxialbase NPN power transistors In Jedec TO-220 plas­ tic package, intended for use in medium power li­

tip420

Abstract: BU522B tip420 transistor BD243 TIP41/TIP42 BD535 transistors d44c8 D44C6 B0243C BD53
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) R esistive Switching lcCont V c E O (sus) Amps Max Volts Min 4 45 Device Type NPN D44C6 D45C6 2N6124 BD534 2N6121 BD533 60 PNP BD535 2N6122 D44C7 BD536 2N6125 D45C7 D44C8 D45C8

Contextual Info: rz 7 SGS-THOMSON Ä T# raoeœiILliera *® BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS . BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec

bd534

Abstract: transistor b 536 bd538
Contextual Info: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BD53B

Abstract: BD536 80535 80536 BD533 BD534 BD535 BD537 BD538 B0537
Contextual Info: 01 38 7 5081 G E S O L I D S TATÊ ì lF | 3075001 “ "Ó1E 001754? 17547 t. • f - 33- H D Pro Electron Power Transistors 7 ~ ‘ 3 3 -0? 1236 BD533, BD534, BD535, BD536, BD537, BD538 / File Number

BD536

Contextual Info: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

TRANSISTOR BD533

Abstract: BD533 BD534 BD535 BD536 BD537 BD538 60V transistor npn 2a 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD535 60 V : BD537

BD533

Abstract: BD534 BD535 BD536 BD537 BD538
Contextual Info: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD533, BD535, BD537 BD534, BD536, BD538 TO-220 Plastic Package BD533, 535, 537 BD534, 536, 538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications

BD537

Abstract: BD536 BD533 BD534 BD535 BD538
Contextual Info: BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in

TRANSISTOR BD538

Contextual Info: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

transistor 536

Abstract: TRANSISTOR BD538 BD 534
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Em itter Voltage S ym bol