BD533 Search Results

GE 537

Abstract: BD533 BD535 BD537
Contextual Info: Inchange Semiconductor Product Specification BD533/535/537 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD534/536/538 ・Low saturation voltage APPLICATIONS ・For medium power linear and switching applications

BD533

Abstract: BD534 BD535 BD536 BD537 BD538
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD533, 535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications

Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD536 - 60 V : BD538

BD537

Abstract: BD535 db536 BD533 BD538 BD536 BD534 BD53
Contextual Info: BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON POWER TRANSISTORS • BD534, BD535, BD536, BD537 AND BD538 ARE STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec

8D534

Abstract: BD538 8D536 B0535 8C407 BD535B BD537B motorola BD534
Contextual Info: MOTOROLA SC {XSTRS/R F> T b 7asM _q oaat.il ? 96D 80 6 1 1. 6 3 6 7 2 5 4 . MOTOROLA SC X S T R S / R F • 3 2 > -c2 / MOTOROLA m SEMICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS . . designed for use in general purpose amplifier and switching

BD534FP

Abstract: BD533FP
Contextual Info: BD533FP BD534FP COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ BD534FP IS SGS-THOMSON PREFERRED SALESTYPE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION U.L. COMPLIANT DESCRIPTION The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded

BD533

Abstract: BD537 BD538 BD534 BD535 BD536
Contextual Info: BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

SC06960

Abstract: BD533FP BD534FP 45V100
Contextual Info: rZ 7 Ä T# SGS-THOMSON BD533FP BD534FP [MO gfô l[L[iera®*S COMPLEMENTARY SILICON POWER TRANSISTORS . BD534FP IS SGS-THOMSON PREFERRED SALESTYPE . FULLY MOLDED ISOLATED PACKAGE . 2000 V DC ISOLATION (U.L. COMPLIANT DESCRIPTION The BD533FP is silicon epitaxial-base NPN

Contextual Info: -r-33-ôl BD533, BD534, BD535, BD536, BD537, BD538 HARRIS SEMICOND SECTOR 5bE J> • Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number iz3 6 43G5571 Q04Db7S 3^1 IHAS TERMINAL DESIGNATIONS General-Purpose Medium-Power Types for Switching and Amplifier Applications

TRANSISTOR 536

Abstract: 536 transistor BD538 TRANSISTOR BD538 BD536 BD534 BD533 BD535 BD537 IC-101 FAIRCHILD
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit -4 5 V : BD536 - 60 V : BD538

BD533FI

Abstract: BD534FI
Contextual Info: BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT220 plastic package. They are inteded for use in medium power linear and switching applications.

Contextual Info: / I T SGS-THOMSON Ä 7# RaDeæi[Liero iDei BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT22C plastic package. They are inteded for use in medium power linear

BD534 G

Abstract: 8053 BD533 BD534 BD535 BD536 BD537 BD538
Contextual Info: DIL BD533,535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MIN DIM A G

BD534FI

Abstract: BD533FI
Contextual Info: r z T SGS-THOMSON Ä T # M » IL [Iig M e t BD533FI BD534FI COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533FI, is a silicon epitaxial-base NPN transistor mounted in ISOWATT220 plastic package. They are inteded for use in medium power linear

D536

Abstract: BD536 D538 BD535B BD537
Contextual Info: SGS-THOMSON BD533/5/7 BD534/6/8 M ^mi©ïi@[il gS COMPLEMENTARY SILICON POWER TRANSISTORS . BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec

Transistor B C 458

Abstract: c 458 c transistor 60V transistor npn 2a switching applications bd533 Transistor n 535
Contextual Info: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO-220 • Com plem ent to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C olle ctor Base Voltage C olle ctor Em itter Voltage

BD533

Abstract: BD537 TRANSISTOR BD533 BD534 BD535 BD536 BD538 101b1 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD535 60 V : BD537

60V transistor npn 2a switching applications

Contextual Info: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BD533 Rating

BD536 equivalent

Abstract: B0536 BD535 equivalent BDB38 80614 Motorola 8061 b0538 8D535 BD638 8053
Contextual Info: MOTOROLA SC ÍXSTRS/R F> ^ 6367254 MOTOROLA SC XSTRS/R P E 1 ^ 3 1 . 7 551* QQflQ b l l 96D F 8061 1 D 7 z J3 - J!- 3 2 > - c 2 / MOTOROLA SEM ICONDUCTOR TECHNICAL DATA NPN PNP BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

BD533

Abstract: BD537 BD53 BD535
Contextual Info: SavantIC Semiconductor Product Specification BD533/535/537 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD534/536/538 ·Low saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING

Contextual Info: BD533, BD535, BD537 BD534, BD536, BD538 DIL BD533,535,537 BD534,536, 538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88

BD53B

Abstract: bd536 BDS34 BD538
Contextual Info: BD533, BD534, BD535, BD536, BD537, BD538 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number 1236 TERM INAL DESIGNATIONS o General-Purpose Medium-Power Types for Switching and Amplifier Applications t : Features: • Low saturation voltages

Contextual Info: ZjJ C T C O U l l i n i i c n i l d ' I n U m O U BD533/BD534 BD535/BD536 BD537/BD538 I l iL !O ra @ [M flO S EPITAXIAL-BASE NPN/PNP D E S C R IP T IO N The BD533, BD535 and BD537 are silicon epitaxialbase NPN power transistors In Jedec TO-220 plas­ tic package, intended for use in medium power li­

BD534

Abstract: BD538 BD536
Contextual Info: SavantIC Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD533/535/537 ·Low saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING