T 2SD633 Search Results

Contextual Info: TOSHIBA Sb -CDISCRETE/OPTOJ 2SD6331 2SD634 I2SD635I 9097 2 5 0 TOSHIBA DE I ^ D ^ E S D GDD7731 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER _ 56C <D I S C R E T E / O P T O > 07 731 T-33-29 INDUSTRIAL APPLICATIONS _ Unit in mm

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

2SB673

Abstract: 733b 2SB674 2SB675 2SD633 2SD634 2SD635 AC75
Contextual Info: T o s h ib a “ -c / d is c r e t l o h to j- “St 2SB6731 2SB674 2SB675I 9097250 TOSHIBA D T | T D i:i?aSD □□□733t, D j| SILICON PNP EPIT AXIA L TYPE PCT PROCESS _ (DARLINGTON POWER)_ 5òC <D I S C R E T E / O P T O ) 0 7 33ö INDUSTRIAL APPLICATIONS

2SD650

Abstract: 2SC4711 MG30G1BL3 2SD670 hitachi 2SD731 2SD670 2SD837B 2SD678 2sd699 2SD683
Contextual Info: - 22 0 - tt M € Type No. « Manuf. SANYO 2SD 677 K 2 TOSHIBA m NEC HITACHI ll * ± a FUJITSU tö T MATSUSHITA MITSUBISHI □ — A ROHM 2SD2132 2SC2139 2SD 678A fö T 2SC3144 2SD635 2SD560 2SD1275A 2SD1932 2SD 679A tö T 2SD1190 2SD634 2SD560 2SD1276A 2SD1932

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SD2172

Abstract: 2SD1555 2SD1573 2SD1650 2SC2665 2sc2238 SD1577 2SD1225M 2SD1651 2SD1649
Contextual Info: 24 4 - m « tt T y p e No. ^ 2SD 1547 « Manuf. Ä 2SD 1548 2SD 1553 3K 2SD 1 554 > ^ E. ft SANYO TOSHIBA 1 NEC B Al HITACHI Ä ± ül F U J ITSU tö T MATSUS H I T A $ 2SD2252 2SD1850 ~*L 2SD1887 2SC4111 2£ 2SD1649 M S. 2SD1650 2SD1846 2SD1651 2SD1847 2SD1652

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

1271A

Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513

957a

Abstract: MG50G2CL3 2SD1960 MG50G2cl3 toshiba 2SC4328 2sd1111 2SC1841 2SD1577 2SD764 2SD947
Contextual Info: - Sí € a * « Manuf. T y p e No. SANYO S TOSHIBA ZSÜ 336 Ä 2SD 937 3È S MG50G2CL3 2SD 938 3È ~2. MG5 0 G 2 C L 3 2SD 939 3£ $ MG50G2CL3 2SD 940 3K S 2SD 941 2SD 942 S: 3E S: 2 2SD 943 £ $ 2SD 946 fö T 2SD894 2 SO 946B te T 2SD1953 □— A 2SD 949

d634

Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634
Contextual Info: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector

B331 transistor

Abstract: transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer
Contextual Info: 1 AP-91 USING THE 8049 AS AN 80 COLUMN PRINTER CONTROLLER I. INTRODUCTION This A pplication N ote d eta ils u sin g I N T E L ’S 8049 m icrocom puter a s a d ot m atrix p rin ter controller. P re v io u s I N T E L A pplication n o tes, e.g. AP-27 and AP-54 d escrib e d usin g in telligen t p ro c e sso rs and p eri­

Contextual Info: T O S H IB A 2SD633,2SD635 2SD633, 2SD635 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS U nit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10.3MAX. 03.6 ± 0.2 I-1 / • • • p r

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

2SB673

Contextual Info: 9 Q R R 7 Q ¿O D D R1A I OjV / R 7 5 s ilic o n p n p t r i p l e d if f u s e d t y p e DARLINGTON POWER “ jO / V INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10.3MAX. 0 3 .6 ± O .2

2SB641 r

Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
Contextual Info: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #

2SB673

Abstract: 2SB675 Bf 353 2SB67 2SB674 2SD633 2SD634 2SD635
Contextual Info: 2SB673.2SB674 2SB675 v 'J Z3 > P N P = S I £ c ^ ^ - U > iif e r O M> V - l'7 'i 7 , / O M Ì - Ì - l'7 -f 03.6±O.2 • W\ ¡ S ììÌì,'®!;ÌEÌ h iIib ^ 7 ! 5 i^ ' ' ' ' o : hF E = 2 0 0 0 ( f t / J ' ) ( V c E = - 3 V , IC = - 3 A ) . : V c B (s a t ) = - 1 . 5 V ( * * ) , (IC = - 3 A )

transistor K 3596

Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 Typ @ IC = 2.0 Adc

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

transistor bd4202

Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

AR8161

Abstract: ARM DII 0238 KEYBOARD CONTROLLER 8049 intel 8049 microcomputer 8049 microcontroller APPLICATION b342 transistor intel AP-54 b175 transistor MCS6200 INTEL 8049 IC
Contextual Info: in t e i APPLICATION NOTE AP-91 {*3 quan’um electronics Box 391262 Bramley 2018 INTEL CORPORATION ASSUMES NO RESPONSIBILITY FOR THE USE OF ANY CIRCUITRY OTHER THAN CIRCUITRY EMBODIED IN AN INTEL PRODUCT. IN TEL CORPORATION. 1979 NO OTHER CIRCUIT PATENT LICENSES ARE IMPLIED.

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

2SB673

Abstract: 2SB674 2sb675
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB673,2SB674 2SB675 INDUSTRIAL APPLICATIONS U nit in mm HIGH POW ER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. 10. :^MA X • • • 03.610.3 High DC Current Gain : hFE = 2000 (Min.) (V c e = -3 V , I c = -3 A )

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207