STROBE Search Results

Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •

LM311 application notes

Abstract: LM311 LM3111 LM311 OPERATIONAL AMPLIFIER OPERATION lm311 application note LM311 application SLCS007A LM311DBLE 100 khz crystal
Contextual Info: LM111, LM211, LM311, LM311Y DIFFERENTIAL COMPARATORS WITH STROBES SLCS007A- SEPTEMBER 1973 - REVISED FEBRUARY 1992 Fast Response Times LM111 . . . J PACKAGE TOP VIEW Strobe Capability Maximum Input Bias C u rren t. . . 300 nA NC[ 1 EMIT O U T [ 2 Maximum Input Offset C u rren t. . . 70 nA

LM311

Abstract: ic lm311 circuit diagram LM311 application notes SLCS007A LM311DBLE LM311T LM111 fk package
Contextual Info: LM111, LM211, LM311, LM311Y DIFFERENTIAL COMPARATORS WITH STROBES SLCS007A-SEPTEMBER 1 9 7 3 - REVISED FEBRUARY 1992 LM111 . . . J PACKAGE Fast Response Times TOP VIEW Strobe Capability Maximum Input Bias C u rre n t. . . 300 nA NC[ EMIT O U T [ IN + [ IN -[

4502BP

Abstract: TC4502BP 4502B
Contextual Info: C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4502BP TC4502BP STROBED HEX INVERTER/BUFFER The T C 4 5 0 2 B P is a strobed h e x i n v erter/buffer w ith 3-state output. W h e n D I S A B L E input is set to "H" level, six o u t p u ts b e come high impedance independently

Contextual Info: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive

sn7423

Abstract: transistor 1yc
Contextual Info: SN5423, SN5425, SN7423, SN7425 DUAL 4 INPUT NOR GATES WITH STROBE DECEMBER 1983-REVISED MARCH 1988 SN5423 . Package Options Include Plastic and Ceram ic D IP s and Ceram ic Flat Packages . J OR W P AC K A G E S N 7423. N P AC KA G E TOP V IE W ! Dependable T exas Instrum ents Quality and

a9011

Abstract: A9012 11ga9 ga9011
Contextual Info: T R DATA / 0 U I N T S E M I C O N D U C T O R , I N C C 0 M M U N ! C A 1 ¡0 N S G A 9 0 1 1/G A 9 0 1 2 STROBE STROBE COAXIAL CABLE OR HOST 40 BITS DATA IN HOT ROD TX GA9011 FIBER-OPTIC CABLE USER OR LED PHOTO DETECTOR DESTI­ NATION HOT ROD RX GA9012 —N

TC4056BP

Abstract: tc4056
Contextual Info: TC4055BP, TC4056BP/BF C 2MOS DIGITAL IN T E G R A T E D CIR C U IT SIL IC O N M O N O L IT H IC TC4055BP LIQUID-CRYSTAL DISPLAY DRIVER BCD TO 7-Segment Decoder/Driver with "Display-Frequency" Output TC4056BP/TC4056BF LIQUID-CRYSTAL DISPLAY DRIVER (BCD TO 7-Segment Decoder/Driver with Strobed-Latch Function)

Contextual Info: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode

5G103

Contextual Info: TOSHIBA TENTATIVE GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 5 G 103 U nit in mm STROBE FLASH APPLICATIONS • • • • • 3rd Generation H igh Input Impedance Low Saturation Voltage ; V cE sat =8 V (M ax-) dC = 130A)

TC4508BP

Contextual Info: TC4508BP TC4508BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL 4-BIT LATCH TC4508BP contains two independent circuits of latches having output disable function and clear function. When STROBE input is "H", the data input appears at the output as it is and if STROBE input is changed

gate driver LM311

Abstract: LM311 ti SLCS007A LM311DBLE LM311PS 2n2222 temperature vs mV NATIONAL SEMICONDUCTOR LM311D
Contextual Info: LM111, LM211, LM311, LM311Y DIFFERENTIAL COMPARATORS WITH STROBES SLCS007A – SEPTEMBER 1973 – REVISED FEBRUARY 1992 D D D D D D Fast Response Times Strobe Capability Maximum Input Bias Current . . . 300 nA Maximum Input Offset Current . . . 70 nA Can Operate From Single 5-V Supply

fr1t

Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,TFR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

2SD826

Abstract: 2SD82
Contextual Info: Inchange Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・Large current capacity APPLICATIONS ・For 3V, 6V strobe applications PINNING

IW4042BD

Abstract: IW4042BN
Contextual Info: TECHNICAL DATA IW4042B Quad Clocked «D» Latch High-Voltage Silicon-Gate CMOS IW4042B types contain four latch circuits, each strobed by a common clock. Complementary buffered outputs are available from each circuit. The impedance of the n- and p-channel output devices is balanced and all

Contextual Info: DS90CR287,DS90CR288A DS90CR287/DS90CR288A +3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link-85 MHz Literature Number: SNLS056F DS90CR287/DS90CR288A +3.3V Rising Edge Data Strobe LVDS 28-Bit Channel Link-85 MHz General Description Features The DS90CR287 transmitter converts 28 bits of LVCMOS/

Contextual Info: LP211, LP311 LOWĆPOWER DIFFERENTIAL COMPARATORS WITH STROBES SLCS003D − JUNE 1987 − REVISED SEPTEMBER 2003 D Low Power Drain . . . 900 µW Typical With D D D D D D D D D LP211 . . . D PACKAGE LP311 . . . D, P, OR PS PACKAGE TOP VIEW 5-V Supply Operates From ±15 V or From a Single

GDDR

Abstract: K4D553238E-JC33 k4d553238e-jc40
Contextual Info: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.

CD4514BMS

Abstract: CD4515BMS MC14514 MC14515 inventer
Contextual Info: CD4514BMS CD4515BMS CMOS 4-Bit Latch/4-to-16 Line Decoders July 14, 2006 Features Pinout • High-Voltage Types 20-Volt Rating CD4514BMS, CD4515BMS TOP VIEW • CD4514BMS Output “High” on Select • CD4515BMS Output “Low” on Select 24 VDD STROBE 1

NT5TU32M16CG-BD

Abstract: NT5TU32M16CG-be NT5TU64M8CE
Contextual Info: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4

SG615PHC

Abstract: Quarzoszillator MAC4216 SG-615PHC MMI4832 MAZET MMI4832 MAC4124 MAZET SG615PH 100NF
Contextual Info: Applikationshinweise zu den Zähler-/Interface IC‘s MMI4832, MAC4124, MAC4216 Version 1.0 Application Note 01 .2 MMI4832: Nutzung der Strobe-Register im inkrementellen Mode .2

Contextual Info: SPEED/PACKAGE AVAILABILITY PIN CONFIGURATION F.N.Q P A C K A G E DATA 3 »cc "’ E «C •E *E =E !E •E -°E 3 .3. ID'” 3, DATA 3« 3» 3 ,. 3,« 3 a" 3, " 3 c_ ST R O B E [7 OUTPUT D Ì» GË d selec t GND []£ TRUTH TABLE INPUTS OUTPUT D c B A STROBE

256mb ddr333 200 pin

Abstract: DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D
Contextual Info: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition

Contextual Info: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •