FR1T Search Results

Contextual Info: FR1T.FR1Y /3 Surface mount diode Fast silicon rectifier diodes  3   0 9  :  4  :  : , %,  4  :  : ,   8 : , /; 5 2  16 5 * & #9% # *> * *? #6= # *-? *-? *-?   :    : 3  16 5 -2 & 19 5 * &

fr1t

Contextual Info: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

toshiba diode do-41

Abstract: toshiba diode "do-41" fr1t TOSHIBA DIODE DATABOOK transistor c945 datasheet 1S1830
Contextual Info: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

yx 801

Abstract: UPD78328GF power supply for stk 4141 yx 801 ic bl60 UPD78328 CM04S PD78327 lopg stk 2125
Contextual Info: M o s m m m f à M O S In te g ra te d C irc u it PD78327,78328 n PD78328 it, S 1 4 tll6 t* -y h CPU Z f à M L t z 78K/III '> U 7 . - n - - y h c7 PWM i f - f /¿PD78322 <75 U T^U ¿ " f A • /\°;u > A — ? iM f f i L î L fc„ ¿¿PD78327 Ì, //PD78328 (7) ROM U ^ Î b T ' Î .

fr1n

Abstract: FR1T
Contextual Info: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

K1V33

Abstract: K1V34 K1V36 K1V38
Contextual Info: >@ K1V33 W / K1V34(W) / K1V36(W) / K1V38(W) T /= 25 °C / Unless otherwise specified) A b solu te M axim um Ratings & ft C o n d itio n s SB-t a m Item fS fffiK Storage Temperature »•S-SWK Operating Junction Temperature ^ 7 MS : Maximum Off-state Voltage

fr1t

Abstract: TFR1N
Contextual Info: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, FR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 10 µs

fr1t

Abstract: 1S1830 fr1n
Contextual Info: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, FR1T Strobo Flasher Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 10 µs

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

MC6839

Abstract: MAX1004
Contextual Info: MOTOROLA MC6839 Advance Information MOS N -C H A N N E L, SILICON-GATE} F L O A T IN G - P O IN T R O M T h e M C 6 8 3 9 s ta n d a r d p r o d u c t R O M p ro v id e s f lo a tin g p o in t c a p a b ility fo r th e M C 6 8 0 9 o r M C 68G 9E M P U . T h e M C 6 8 3 9 im p le m e n ts th e e n tir e

HD63310P20

Abstract: hd63310p
Contextual Info: HD63310R-Smart Dual Port RAM S-DPRAM D escription P in A rra n g e m e n t Driven by th e declining costs of VLSI CPUs, n ew m ultiprocessing and parallel-processing architectures are being explored to break the perform ance barrier of single CPU designs. A

Contextual Info: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, FR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 10 µs

mc6839

Abstract: MC6809E M6809 MC68B39L MC6809 motorola 6809 instruction set opcoa S3F80 MC68B39P ERES CGL
Contextual Info: MC6839 M O T O R O LA Advance Information M OS N -C H A N N E L , S IL IC O N -G A T E } FLOATING-POINT ROM The M C6839 standard p ro d u c t ROM provides flo a tin g p o in t capa bility for the M C6809 or MC6809E M PU . The M C6839 im plem e nts th e entire

RELE RAS 1210

Abstract: HD63310P20
Contextual Info: HD63310R-Smart Dual Port RAM S-DPRAM Description Pin Arrangement Driven by the declining costs of VLSI CPUs, new m ultiprocessing and parallel-processing architectures are being explored to break the perform ance barrier of single CPU designs. A

fr1t

Contextual Info: TFR1N,FR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,FR1T Strobe Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

hd63310

Abstract: hd63310rp20 HD63310P
Contextual Info: HD63310R-Smart Dual Port RAM S-DPRAM D escription P in A rra n g e m e n t D riven by th e d eclin in g co sts of VLSI CPUs, n e w m u ltip ro cessin g a n d p a ra lle l-p ro c e ssin g a rc h ite c tu re s a re b e in g e x p lo re d to b re a k th e