K1V33 Search Results

K1V33

Abstract: SIDAC K1V34 K1V36 K1V38
Contextual Info: SHINDENGEN Sidac OUTLINE DIMENSIONS K1V33 W Case : AX10 (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Surge On-state Current Pulse On-state Current Symbol

K1V33

Abstract: K1V34 K1V36 K1V38
Contextual Info: SHINDENGEN Sidac OUTLINE DIMENSIONS K1V33 W Case : AX10 (Unit : mm) RATINGS œAbsolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Surge On-state Current Pulse On-state Current Symbol

Contextual Info: iß K1V33 W /K1V34(W)/K1V36(W)/K1V38(W) Absolute Maximum Ratings a Item a U tfM M Storage Temperature Operating Junction Temperature ^ "7 ^ J ± Maximum Off-state Voltage RMS On-state Current t yW tfi *9*“ v Surge On-state Current it Repetitive Peak On-state Current

K1V33

Abstract: K1V34 K1V36 K1V38
Contextual Info: >@ K1V33 W / K1V34(W) / K1V36(W) / K1V38(W) T /= 25 °C / Unless otherwise specified) A b solu te M axim um Ratings & ft C o n d itio n s SB-t a m Item fS fffiK Storage Temperature »•S-SWK Operating Junction Temperature ^ 7 MS : Maximum Off-state Voltage

Contextual Info: V M v o u v v v ; Series Type No. K1V33CW , K1V34CW), K1V36CW), K1V38CW) A b s o lu te M a x im u m R a tin g s m Symbol i* *?;•&« S to ra g e T em p eratu re * y ig J i Maximum O f f - s t a t e Voltage Tj 125 *C V drm 270 V 1 A Itsm It Critical Rate of Rise of O n-state Current

SIDAC K1V 32

Abstract: ax06 sidac violet k1v diode DO41 package k1v8 K1V11 db3 diac SIDAC k1v5 A405
Contextual Info: SEMICONDUCTORS DIODES, Trigger DIAC DO41 DO41 mod DO35 min. nom. 28 32 Breakover Voltage Symmetry Breakover Current dV between 0 and 10mA dV max. V IBO max. (µA) min. (V) DB3 ±3 100 5 DB3A ±3 100 5 DO41 DB3AS ±3 100 5 DO41 mod / A405 Device No. & Order Code

K1V33

Abstract: K1V34 K1V36 K1V38
Contextual Info: SHINDENGEN Sidac OUTLINE DIMENSIONS K1V38 W Case : AX10 (Unit : mm) RATINGS œAbsolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Surge On-state Current Pulse On-state Current Symbol

k1v diode

Abstract: diode k1v K1V 40 N K1V6 k1v16 k1v8 SIDAC K1V sidac
Contextual Info: SILICON DIODE FOR ALTERNATING CURRENT By a d d in g re g u la te d vo lta g e , the SIDAC is a semiconductor which can conduct in either direction. If the cu rre n t flo w passing throu g h the elem ent f flm ^ T \z T ¿ n \ttz > v ím £ t¿ o ^ ? 0 ? - becomes lower than the holding current, the SIDAC

K1v4

Abstract: ELECTROLYTIC capacitor, .4700 uF 35V 6800 uF 63 V K1V47 k1v470a EE panasonic Aluminum capacitor marking date code capacitor 6800 uf EIAJ C-3 panasonic fk K1V220
Contextual Info: Product Specification V type CE-VFKA4-CE-0-7 FK series High. temp. Pb free reflow type Page No. Contents Contents Notice matter P.1 Scope P.2 Parts Number P.2 Parts Lists P.3 ~ P.5 Can Size Table P.6 Dimensions P.7 Constructions P.8 Marking P.8 Lot No. System

Contextual Info: SIDAC Silicon Diode for Alternating Current SIDAC [Features] 1. Symmetrical characteristics. 2. Directly swicthing performance to commercial power sources and generating pulse by simple circuit. 3. The glass passivation ensures high reliability. [A pplicatio ns]

SIDAC K

Contextual Info: SIDAC Silicon Diode for Alternating Current SIDAC [F e a tu re s ] 1. S ym m etrical characteristics. 2. D irectly sw icthing perform ance to com m ercial pow er sources and generating pulse by sim ple circuit. 3. The glass passivation ensures high reliability.

1V5 Capacitors

Contextual Info: SIDAC S ilico n Diode f o r A lt e r n a t in g C u r r e n t [F e a tu re s] 1. Symmetrical characteristics. 2. Directly swicthing performence to commercial power sources and generating pulse by simple circuit. 3. The glass passivation ensures high reliability.

shockley diode

Abstract: shockley diode applications K1V15 shockley SIDAC K1V K1V18 k1v8 diode k1v sidac
Contextual Info: — E FOR ALTERNATING CURRENT ttä m v m E E G m za n tm * By adding regulated vo lta g e , the S ID A C is a semiconductor which can conduct in either direction. If the current flow passing through the element becomes lower than the holding current, the SIDAC

K1V33

Abstract: K1V34 K1V36 K1V38
Contextual Info: SHINDENGEN Sidac OUTLINE DIMENSIONS K1V34 W Case : AX10 (Unit : mm) RATINGS œAbsolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Symbol Tstg Tj VDRM IT Surge On-state Current I TSM

SIDAC

Abstract: K1V33 K1V34 K1V36 K1V38
Contextual Info: SHINDENGEN Sidac OUTLINE DIMENSIONS K1V34 W Case : AX10 (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Symbol Tstg Tj VDRM IT Conditions Tl = 92℃, 50Hz sine wave (θ = 180°）

SIDAC

Abstract: K1V33 K1V34 K1V36 K1V38
Contextual Info: SHINDENGEN Sidac OUTLINE DIMENSIONS K1V38 W Case : AX10 (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Surge On-state Current Pulse On-state Current Symbol

K1V33

Abstract: K1V34 K1V36 K1V38
Contextual Info: SHINDENGEN Sidac OUTLINE DIMENSIONS K1V36 W Case : AX10 (Unit : mm) RATINGS œAbsolute Maximum Ratings Item Storage Temperature Operating Junction Temperature Maximum Off-state Voltage RMS On-state Current Surge On-state Current Pulse On-state Current Symbol

DIODE KIV

Abstract: SIDAC KIV DIODE KIV 4 diode KIV 8 diode KIV 70 DIODE KIV 2 kiv 07 sidac violet kiv diode KIV* diode
Contextual Info: SIDAC SILICON DIODE FOR ALTERNATING CURRENT Sidac Features 1. Symmetrical characteristics. 2. Directly switching performance to commercial power sources and generating pulse by simple circuit. 3. The glass passivation ensures high reliability. Application

diode k1v

Abstract: sidac violet K1V6 k1v16 K1V18 SIDAC K1V10 k1v diode
Contextual Info: SIDAC Silicon Diode for Alternating Current SIDAC(Bi-Directional Device) [Features] 1. Symmetrical characteristics. 2. Perform direct switching operation using commercial power sources, and can be used in all kinds of pulse generating circuits. 3. The glass passivation ensures high reliability.