TFR1N Search Results

fr1t

Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,TFR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE TFR1N/T STRO BO FLASHER APPLICATIONS. FAST RECOVERY U n it in m m • Average Forward Current IF(AV) =0-5A • Repetitive Peak Reverse Voltage V r r m = 1000, 1500V • Reverse Recovery Time tj*j*—10//S M A X IM U M RATING

SR400FV-70

Abstract: SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - M m s SR400FH-60 SR400FV-70 SR400FV—80 SRH25C SWH2-16 SWH2-20 SWH2-25ED SffH-08 SWH-10 SWHD2-16 SWHD2-20 SWHD2-25 S*HD3-16 SWHD3-20 T51A T51B T51C T52A T52B T52C TD-13 TD-15 TD-15H TFR1L TFR1N TFR1Q TFR1T TFR2L TFR2N TFR2Q TFR2T TFR4L TFR4N TFR4Q TFR4T

toshiba diode do-41

Abstract: toshiba diode "do-41" fr1t TOSHIBA DIODE DATABOOK transistor c945 datasheet 1S1830
Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,TFR1T Strobe Applications Fast Recovery Unit: mm • Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

Contextual Info: T O S H IB A TFR1 N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Unit in mm Average Forward Current : Ijr (AV) = 0.5A Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V Reverse Recovery Time

fr1n

Abstract: FR1T
Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N,TFR1T Strobe Applications Fast Recovery • Unit: mm Average forward current: IF (AV) = 0.5 A • Repetitive peak reverse voltage: VRRM = 1000, 1500 V • Reverse recovery time: trr = 10 µs

fr1t

Abstract: TFR1N
Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, TFR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 10 µs

fr1n

Contextual Info: TOSHIBA TFR1N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current : If (a V) = 0.5A • Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V • Reverse Recovery Time

Contextual Info: TOSHIBA TFR1N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : If (AV) = 0.5 A Repetitive Peak Reverse Voltage : V r r m = 1000, 1500 V Reverse Recovery Time

IS1832

Abstract: diode 1800v 0.5a TFR1L
Contextual Info: 9 0 9 7 2 50 TOSHIBA 3T DE I TDTTSSD 000223e] T TFR1T 39C 0 2239 DISCRETE/OPTO 0 T 1 0 3 “// FAST RECOVERY DIODE _ Unit in wn 1500V 0.5A MAXIMUM RATINGS C H A R A C T E R IS T IC TFR 1L TFR1N Repetitive Peak R everse Voltage TFR1Q TFR1T Average F orw ard C urrent

fr1t

Abstract: 1S1830 fr1n
Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, TFR1T Strobo Flasher Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 10 µs

TOSHIBA 1N DIODE

Abstract: TFR1
Contextual Info: T O SH IB A TFR1NJFR1T TOSHIBA FAST RECOVERY DIODE TFR 1N SILICON DIFFUSED TYPE TFR1T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward C urrent : I f (AV)~0.5A • • Repetitive Peak Reverse Voltage : V r r ]v[= 1000, 1500V Reverse Recovery Time

Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, TFR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A · Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V · Reverse Recovery Time: trr = 10 µs

Contextual Info: TFR1N,TFR1T TOSHIBA Fast Recovery Diode Silicon Diffused Type TFR1N, TFR1T Strobo Flasher Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A • Repetitive Peak Reverse Voltage: VRRM = 1000, 1500 V • Reverse Recovery Time: trr = 10 µs

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

6B4B41

Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Contextual Info: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N

SWH2-16

Abstract: TVRIG SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250

SRH25C

Abstract: nl 545 SR400FV-70 SR400FV-80 SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

TVR2D

Abstract: GT 50 30M 20E SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250

c 335 16k

Abstract: IS4550 SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

SR400FV-80

Abstract: SR400FV-70 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250

TVRIG

Abstract: SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (A) (°C> m 1£ Æ ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 Io, fF* * $ isi m & Æ [SJ # 87- 1É * iRntax m # fi n $ m If (A) T(°C) (/¿A) V r (V) T (°C) 1250