000707EAA1 Search Results

Contextual Info: S−AU68L TOSHIBA RF POWER AMPLIFIER MODULE S−AU68L UHF BAND FM POWER AMPLIFIER MODULE Unit in mm MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 50 mW Output Power Po 12

Contextual Info: CMS11 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS11 Switching Mode Power Supply Applications Portable Equipment Battery Applications • • • • Forward voltage: VFM = 0.37 V max Average forward current: IF (AV) = 3.0 A Repetitive peak reverse voltage: VRRM = 30 V

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Abstract: JDV2S02E
Contextual Info: JDV2S02E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S02E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 2.0 typ. • Low Series Resistance : rs = 0.60 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

JDV2S05E

Contextual Info: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band • Small Package • High Capacitance Ratio : C1V/C4V = 1.9 typ. • Low Series Resistance : rs = 0.30 Ω (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

NPN 2SC2782

Abstract: transistor 2sc2782 2SC2782
Contextual Info: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

TORX173

Abstract: OPTIC TRANSMITTING MODULE DIGITAL AUDIO Toshiba TORX173
Contextual Info: TORX173 FIBER OPTIC RECEIVING MODULE TORX173 FIBER OPTIC RECEIVING MODULE FOR DIGITAL AUDIO EQUIPMENT Unit: mm Conform to EIAJ Standard CP−1201 For Digital Audio Interfaces including Fiber Optic inter−connections . TTL Interface ATC (Automatic Threshold Control) Circuit

TOSHIBA RF Power Module

Contextual Info: S−AU68M TOSHIBA RF POWER AMPLIFIER MODULE S−AU68M UHF BAND FM POWER AMPLIFIER MODULE Unit in mm MAXIMUM RATINGS Tc=25°C CHARACTERISTIC SYMBOL RATING UNIT DC Supply Voltage VDD 17 V DC Supply Voltage VGG 6 V Input Power Pi 50 mW Output Power Po 12 W

RN4902FE

Contextual Info: RN4902FE TOSHIBA Transistor Silicon PNP•NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4902FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

TOSHIBA IGBT DATA BOOK

Abstract: GT25Q102 GT25Q301
Contextual Info: GT25Q102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.32 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)

2SK3074

Abstract: all mosfet vhf power amplifier transistor marking zg
Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

Contextual Info: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c

Contextual Info: 2SJ167 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPPED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 67 ANALOG SWITCH APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time t0n - 14 ns Typ. High Forward Transfer Admittance |Yfs| = lOOmS (Min.)

Contextual Info: TO SH IBA MT3S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AU V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IBA HN4K03JU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN4K03JU Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS High Input Impedance Low Gate Threshold Voltage : V^h = 0.5—1.5 V Excellent Switching Times Small Package

RN1102F

Abstract: RN2102F RN47A3
Contextual Info: RN47A3 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A3 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

RN4987FE

Contextual Info: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN4983FE

Contextual Info: RN4983FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4983FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

MT3S06S

Abstract: MT3S06T MT3S08T MT6L54E
Contextual Info: MT6L54E Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No. Q1: SSM (TESM)

Contextual Info: 16DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 16DL2C41A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM=200V Average Output Rectified Current : IO=16A Unit in mm Ultra Fast Reverse−Recovery Time : trr=35ns (Max.)

K 192 A transistor

Abstract: RN1967FE RN1968FE RN1969FE RN2967FE RN2969FE
Contextual Info: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE, RN1968FE, RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

RN1103F

Abstract: RN2103F RN47A2
Contextual Info: RN47A2 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A2 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

RN2971FE

Abstract: RN1970FE RN1971FE RN2970FE
Contextual Info: RN1970FE,RN1971FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1970FE, RN1971FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)

SSM6N09FU

Contextual Info: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

RN4985FE

Contextual Info: RN4985FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)