630MW Search Results

2SK3074

Abstract: all mosfet vhf power amplifier transistor marking zg
Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

Contextual Info: ANALOG DEVICES □ FEATURES Ultrastable Unity Gain Bandwidth 100MHz Bandwidth Is Independent of Gain Settings 18ns Settling to 0.1% Low Power Dissipation (630mW) Complete Overdrive Protection Low Distortion (THD: - 59dBc @ 20MHz, -78dBc @ 5MHz, -lOOdBc @ 10kHz)

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

LTC5541

Abstract: LT5554 LT5579 LTC5540 LT5578 LTC5542 LTC5543 LT5570 LT5557
Contextual Info: LTC5541 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 7.8dB at 1950MHz IIP3: 26.4dBm at 1950MHz Noise Figure: 9.6dB at 1950MHz 16dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 630mW Power Consumption

74s573

Abstract: AM27S33 PROM Am27S33 82HM137 82HM137CJN 82HM137CPN MCM7643 m7643 HM7643 74S573 "direct replacement"
Contextual Info: ;i 4 1 024 X 82H M 137 4 0 9 6 BIT 4 HMOS ROM FEATURES GENERAL DESCRIPTION • High speed — 70ns maximum accoss time • Low Power 630mW (82HM137C) • Completely static — no clock required •Single +5V supply • Fully TTL compatible • Two Chip Select inputs

Contextual Info: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE d Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER 1.6MAX. 4.6MAX. 0.4 +0.05 • • • Output Power Power Gain Drain Efficiency PO^630mW GP^ 14.9dB V j = 45%

NF919

Abstract: WBC4-6TLB Power AMP P1dB 35dBm LTC5541 LTC5540 LTC5542 LTC5543 TA-0116 TC4-1W-7ALN LT5557
Contextual Info: LTC5541 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n Conversion Gain: 7.8dB at 1950MHz IIP3: 26.4dBm at 1950MHz Noise Figure: 9.6dB at 1950MHz 16dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 630mW Power Consumption

2SK3074

Contextual Info: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)

2SC300

Abstract: 2SC3006 2sc2988 630-R 630RF
Contextual Info: A È ; Jf! t; § I • 2 SC 2 9 5 1 ffliÉ : 4— 12GHz 0» S ÌÌI* ffl 630mW Vcc=12V, f=7. 5 Sfattiti GHz : FM M u f f i i •2 S C 2 9 8 8 f é T 440 flFE fr(GH z) Cob(pF) Tj (°C) 200 I c bo (M ) hFE • 2 SC 2 9 9 1 08 T O : VHF S T O i f l B , H S W S S f f lo

Contextual Info: ANALOG DEVICES □ FEATURES Ultrastable Unity Gain Bandwidth 100MHz Bandwidth Is Independent of Gain Settings 18ns Settling to 0.1% Low Power Dissipation (630mW) Complete Overdrive Protection Low Distortion (THD: -59dBc @ 20MHz, —78dBc @ 5MHz, -lOOdBc @ 10kHz)

Contextual Info: LTC2224 12-Bit, 135Msps ADC U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 135Msps 67.3dB SNR up to 140MHz Input 80dB SFDR up to 150MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 630mW

2SK3074

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER l Output Power : PO ≥ 630mW l Power Gain : GP ≥ 14.9dB l Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

pin diagram of ic 4520

Abstract: 16 pin description of IC 4520 Transistor 2246 2248 2249 capacitor 2247 S 2530 A LTC2227 LTC2228 LTC2229 LTC2247
Contextual Info: LTC2248/LTC2247/LTC2246 14-Bit, 65/40/25Msps Low Power 3V ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 2248/LTC2247/LTC2246 are 14-bit 65Msps/ 40Msps/25Msps, low power 3V A/D converters designed for digitizing high frequency, wide dynamic range signals.

two Tone generator

Abstract: ac voltage stabilizer circuit diagram chip for generating 10 Mhz sine wave CMOS Data Book stabiliser circuit diagram LTC2256C LTC2256I LTC2257C LTC2257I LTC2258-12
Contextual Info: Electrical Specifications Subject to Change LTC2258-12 LTC2257-12/LTC2256-12 12-Bit, 65/40/2 5Msps Ultralow Power 1.8V ADCs FEATURES DESCRIPTION n The LTC 2258-12/LTC2257-12/LTC2256-12 are sampling 12-bit A/D converters designed for digitizing high frequency, wide dynamic range signals. They are perfect

4AT5

Contextual Info: TPA2016D2 YZH RTJ www.ti.com. SLOS524D – JUNE 2008 – REVISED AUGUST 2009 2.8-W/Ch Stereo Class-D Audio Amplifier with Dynamic Range Compression and AGC

230v ac white led driver

Abstract: luxeon 1w Lumidrives lumispot
Contextual Info: LumiDrives Product Data LumiSpot LED Arrays The LumiSpots are a range of four circular LED arrays designed to complement the Lumidrives range of Microdrivers and are ideal for a myriad of OEM solutions. They can be driven either singly or in multiples depending on the total number of LEDs

TPA2018D1

Contextual Info: TPA2018D1 www.ti.com . SLOS592 – AUGUST 2009 3-W Mono Class-D Audio Amplifier with SmartGain AGC/DRC

Contextual Info: TPA2026D2 YZH www.ti.com SLOS649 – MARCH 2010 3.2-W/Ch Stereo Class-D Audio Amplifier with Fast Gain Ramp SmartGain AGC/DRC Check for Samples: TPA2026D2 FEATURES DESCRIPTION • • • • • • • • • • The TPA2026D2 is a stereo, filter-free Class-D audio

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA

D13N3

Abstract: LTC2262IUJ-14 LTC2262-14 LTC2262-IUJ14 mark d13n d12n marking LTC2262UJ-14 LTC2262IUJ-14#TRPBF
Contextual Info: LTC2262-14 14-Bit, 150Msps Ultralow Power 1.8V ADC Features Description n n n n n n n n n n n n The LTC 2262-14 is a sampling 14-bit A/D converter designed for digitizing high frequency, wide dynamic range signals. The LTC2262-14 is perfect for demanding communications applications with AC performance that includes

pfc8574

Abstract: ENC 03 LTC2272 marking code s4 diode op amp marking P3 JESD204 LTC2273
Contextual Info: LTC2273/LTC2272 16-Bit, 80Msps/65Msps Serial Output ADC DESCRIPTION FEATURES n High Speed Serial Interface JESD204 Sample Rate: 80Msps/65Msps 77.7dBFS Noise Floor 100dB SFDR SFDR >90dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range)

Balun cable

Abstract: LTC2220 LTC2220-1 LTC2221 LTC2230 LTC2231
Contextual Info: LTC2220-1 12-Bit,185Msps ADC U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 2220-1 is a 185Msps, sampling 12-bit A/D converter designed for digitizing high frequency, wide dynamic range signals. The LTC2220-1 is perfect for

RD07MUS1A

Abstract: FIN1002 LTC2225 LTC2227 LTC2228 LTC2229 LTC2247 LTC2248 LTC2249 LTC2252
Contextual Info: LTC2225 12-Bit, 10Msps Low Power 3V ADC U FEATURES DESCRIPTIO • The LTC 2225 is a 12-bit 10Msps, low power 3V A/D converter designed for digitizing high frequency, wide dynamic range signals. The LTC2225 is perfect for demanding imaging and communications applications with

Contextual Info: HM100484-10 Preliminary 4096-wrod x 4-bit Fully Decoded Random Access Memory The H M 100484 is E C L 100k com patible, 4096-words by 4-bits read/write random access memory developed fo r high speed systems such as acratch pads and control/b uffer storage.