2SC300 Search Results

10ID

Abstract: 2SC3006
Contextual Info: TOSHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3006 UHF BAND POWER AMPLIFIER APPLICATIONS • Output Power : Unit in mm Po = 3W Min. (f= 470MHz, V e e = 12.6V, Pi = 0.4W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

2SC2300

Abstract: 2SC3000 ITR05205 ITR05206 ITR05207 ITR05208
Contextual Info: Ordering number:ENN866C NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Features Package Dimensions • FBET series. · High fT and small Cre. unit:mm 2003B [2SC3000] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1 Specifications

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3001 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING D i m e n s i o n s in m m 2 S C 3 0 0 1 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications. FEATURES

2sc3055

Abstract: T03B 2SC3008-KA 2SC3030 2SC3008-MA 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006
Contextual Info: - 142 - ili íS±¿ Ta=25cC, *EpíÍTc=25t¡ A7 -a f-L -a m iâ VCBO VcEO (V) (V) Ic(DC) (A) Pc* (W) (W) HF A 25 20 0.03 0.15 2SC3000 HF A 30 20 0.03 0.25 2SC3001 HF PA 20 2SC2999 2SC3004 BÍL 2SC3006 2SC3007 2SC3008-KA an 2SC30Û8-MA sm 2SC3011 2SC3012

2SC3001

Contextual Info: MITSUBISHI RF POW ER TRANSISTOR 2SC3001 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING D im e n s io n s in m m 2 S C 3 0 0 1 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for V H F power amplifier applications.

2SC3001

Abstract: mitsubishi vcb
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3001 NPN EPITAXIAL PL AN AR T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 0 1 is a silicon NPN epitaxial planar typ e transistor specifi­ cally designed for V H F pow er amplifier applications. FEATURES •

Contextual Info: 2SC3004 Silicon NPN Epitaxial HITACHI Application High gain amplifier medium speed switching Outline TO-126 MOD 2SC3004 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage v CB0 30 V Collector to em itter voltage v CE0

Contextual Info: 2SC3004 Silicon NPN Epitaxial HITACHI Application High gain amplifier medium speed switching Outline TO-126 MOD I 1. Emitter 2. Collector 3. Base 2SC3004 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B O 30 V

Contextual Info: 2SC3004 Silicon NPN Epitaxial HITACHI Application High gain amplifier medium speed switching Outline TO-126 MOD I 1. Em itter 2. Collector 3. Base 2SC3004 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B G 30 V

DB3 c130

Abstract: AM-FM TUNER 3v 2SC3000
Contextual Info: 2SC3000 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1100MHz ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol 1. Rating 1.BASE 2.EMITTER 3.COLLECTOR Unit 2.4 1.3 Vcbo 30

Contextual Info: TOSHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3QQ6 Weight : 1.9g ELECTRICAL CHARACTERISTICS Tc = 25°C SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current !CBO VCB = 15V, IE = 0 Collector-Base Breakdown Voltage V(BR)CBO I q = 2mA, I e = 0

2SC2300

Abstract: 2SC3000
Contextual Info: Ordering number:EN866C NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Features Package Dimensions • FBET series. · High fT and small Cre. unit:mm 2003A [2SC3000] B : Base C : Collector E : Emitter SANYO : NP JEDEC : TO-92 EIAJ

Contextual Info: TO SHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f í n n fi UHF BAND POWER AMPLIFIER APPLICATIONS Output Power Unit in mm Po = 3W Min. r f= 4 .7 0 iv m 7 V. / in = 1 9. RV -P i- = n 4.W1 . , MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC

NEC 2933

Abstract: 2SD2004 2SC2559 2SC1740S 2SC2751 2SC2621 2SC2819 2SC2926S 2sc3153 2sc3277
Contextual Info: 150 - tt m % Type No. ^ 2SC 2929 ^ 2SC 2931 2SC 2932 2SC 2933 ¿ 2SC 2934 r 2SC 2935 2SC 2937 o' 2SC 2938 ✓ 2SC 2939 / 2SC 2943 2SC3000 2SC2621 M S TOSHIBA 2SC3038 XL 2SC2621 2SC2688 0 tL StS tc StS Æ SÍS7C 2SC2621 2SC2688 2SC 2959 2SC 2960 H * 2SC 2961 >

2SC3006

Abstract: 2SC300
Contextual Info: 2SC3006 SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . Output Power : P0=3W Min. (f=470MHz, Vcc=12.6V, Pi=0.4W) MAXIMUM RATINGS (Ta-25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage

Contextual Info: TOSHIBA {DI SC RET E/ OP TO } 9097250 TOSHIBA Sb <DIS C R E T E / O P T O 2SC3007 DE I ^0^7350 0007^53 E 56C ÖT 62 3 SILIC O N NPN E P IT A X IA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS U n it in mm HIGH CURRENT SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION.

Contextual Info: | Ordering number: EN 8 6 6 C JSA%YO _ 2SC3000 No.seec NPN Epitaxial Planar Silicon Transistor i H F A m p A p p lic a tio n s Features . FBET series. . High fT and small cre. Absolute Mazlaua Ratings at Ta=25°C Collector to Base Voltage VCB0 Collector to Emitter Voltage VCE0

2SC3004

Contextual Info: HITACHI 2SC3004— SILICON NPN EPITAXIAL HIGH GAIN AMPLIFIER MEDIUM SPEED SWITCHING JEDEC TO-126 MOD. • ABSOLUTE MAXIMUM RATINGS <Ta=25*C) hem Symbol MAXIMUM COLLECTOR DISSIPATION 2SC3004 Unit Collector to base voltage VctWj 30 V Collector 10 emitter voltage

2SC3000

Abstract: LT3973-3.3 D111 ITR05205 ITR05206 ITR05207 ITR05208 N084 866b LT3971-3.3
Contextual Info: 注文コード No. N 8 6 6 C 2SC3000 No. N 8 6 6 C 30600 ＊半導体ニューズ No.866A（’ 85 TR HB No.866B）とさしかえてください。 2SC3000 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用

Hitachi DSA00164

Contextual Info: 2SC3004 Silicon NPN Epitaxial Application High gain amplifier medium speed switching Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 1 2SC3004 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

2SC3000

Contextual Info: Ordering n u m b e r:EN 8 6 6 C ' _ 2SC3000 Ñ0.866C N PN Epitaxial Planar Silicon Transistor HF Amp Applications I Features . FBET series. . High fT and small cre. Absolute Max 1¡bum Ratings at Ta:25°C Collector to Base Voltage V CBO Collector to Emitter Voltage VCE0

2SC3000

Contextual Info: 2SC3000 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1100MHz ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol 1. Rating 1.BASE 2.EMITTER 3.COLLECTOR Unit 2.4 1.3 Vcbo 30

Contextual Info: í HITACHI 2SC3004 SILICON NPN EPITAXIAL HIGH GAIN A M PLIFIER MEDIUM S P E E D SW ITCHING 3 I. j Ìli I {-fllitlC i 2. t n ¿* < i5m K »»V ‘*n> »« tn>u> Ò i JED EC TO-126 MOD. I ABSOLUTE MAXIMUM RATINGS <Tu-25&#39;0 jüy Ilern Collector lo hase voltage

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip