STP80N03 Search Results

STP80N03L-06

Contextual Info: STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID STP80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: X t7 SGS-THOMSON iUKSTIiMDSt STP80N03L-06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR TENTATIVE DATA TYPE V S T P 8 0 N 0 3 L -0 6 • . . . . . . . d ss 30 V R D S on Id < 0 .0 0 6 Q. 80 A (*) TYPICAL R d s (o h ) = 0.005 C2 AVALANCHE RUGGED TECHNOLOGY

P80N03

Abstract: P80N03L-06
Contextual Info: STP80N03L-06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYPE V DSS R DS on ID ST P80N03L-06 30 V < 0.006 Ω 80 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

STE30NA50-DK

Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

Transistor BC327 Q1

Abstract: STP60N03 STP80N03 bc327 pinout BC327 Q1 3A-12 AN908 BC337 L4990A M74HC125
Contextual Info: AN908 Application note High performance VRM using L4990A, for Pentium Pro processor Introduction The actual generation of Pentium Pro® microprocessors, requires a power supply with a programmable output voltage that decreases with the increasing of the processor internal

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

STP80N03L-06

Contextual Info: S G S -T H O M S O N [M O ig œ ilL ie ra *® STP 80 N 03 L -06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYP E V dss RDS on Id STP80N 03L-06 30 V < 0.006 Q. 80 A (*) • . . . . . . . TYPICAL RDS(on) = 0.005 £1

20L25CT

Abstract: AN908 LM339 equivalent M74HC125 BC337 equivalent equivalent for BC337 T3852 T38-52 3A-12 BC327
Contextual Info: AN908 APPLICATION NOTE HIGH PERFORMANCE VRM USING L4990A, FOR Pentium Pro PROCESSOR by Nicola Tricomi SYSTEM DESCRIPTION The actual generation of Pentium Pro® microprocessors, requires a power supply with a programmable output voltage that decreases with the increasing of the processor internal clock. At the same time

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

20L25CT

Abstract: BC327 BC337 noise figure M74HC125 equivalent for BC337 532956-7 BC337 figure AN908 3A-12 BC327 L4990A
Contextual Info: AN908 APPLICATION NOTE HIGH PERFORMANCE VRM USING L4990A, FOR Pentium Pro PROCESSOR by Nicola Tricomi SYSTEM DESCRIPTION The actual generation of Pentium Pro microprocessors, requires a power supply with a programmable output voltage that decreases with the increasing of the processor internal clock. At the same time

bc327 pinout

Abstract: BC337 pinout bc327 equivalent LM339 equivalent 330uF-25V BC327 BC337 noise figure BC327 noise figure LM339 application note T38-52 12v 30A regulator
Contextual Info: AN908 APPLICATION NOTE  HIGH PERFORMANCE VRM USING L4990A, FOR Pentium Pro PROCESSOR by Nicola Tricomi SYSTEM DESCRIPTION The actual generation of Pentium Pro microprocessors, requires a power supply with a programmable output voltage that decreases with the increasing of the processor internal clock. At the same time

STP3N60FI

Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
Contextual Info: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L

STripFET

Abstract: k12n06 STP50N05 k12n06l MTP3055E Si4412DY STD17N06L Si9410DY Si9936DY STP55N06L
Contextual Info: STRIPFET AN UPDATE OF OUR “NE” SERIES LOW VOLTAGE POWER MOSFETs The continuous downward price pressure has forced all suppliers to optimize silicon and implement consequent product rationalization. This trend is particularly true for low voltage Power MOSFETs, where

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

ste30na50-DK

Abstract: ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 2 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000