MTP3055 Search Results

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY

MTP3055EFI

Abstract: MTP3055E
Contextual Info: MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E MTP3055EFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.15 Ω < 0.15 Ω 14 A 10 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: , On&. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTP3055E N-CHANNEL 60V-0.1Q-12A TO-220 STripFET MOSFET TYPE MTP3055E VDSS 60 V RDS(on) ID < 0.15 a 12 A TYPICAL RDS(on) = 0.1 Q AVALANCHE RUGGED TECHNOLOGY

p3055v

Abstract: TP3055V MOTOROLA 3055V
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP3055V TMOS V™ Power Field Effect Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e s ig n e d to a ch ie ve an o n -re s is ta n ce area prod u ct a bo u t o n e -h a lf th a t o f sta n d a rd M O SFETs. This

tp3055

Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
Contextual Info: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: MTP3055E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)70# Minimum Operating Temp (øC)

Contextual Info: MTP3055AFI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30 Minimum Operating Temp (øC)

TO-220AB

Abstract: TO-220 package thermal resistance transistor TB 410 AN569 MTP3055VL
Contextual Info: MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N−Channel TO−220 http://onsemi.com This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP3055

Abstract: MTP3055V AN569
Contextual Info: MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

AN569

Abstract: MTP3055VL DSA00107673
Contextual Info: MTP3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP3055E

Abstract: MTP3055EFI
Contextual Info: MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E MTP3055EFI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.15 Ω < 0.15 Ω 14 A 10 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

SGSP321

Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
Contextual Info: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*

transistor mtp3055e

Abstract: MTP3055E-MOTOROLA T1N2 221A-06 AN569 MTP3055 MTP3055E
Contextual Info: M OT O R O L A SC X S T R S / R F b 3 b 7 E S 4 ODTflflEl 5 ^ b&E D n o T b MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MTP3055E T M O S IV N-Channel Enhancem ent-Mode Motorola Preferred Device Pow er Field Effect Transistor This advanced " E " series of T M O S power M O S F E T s is

MTP3055E

Abstract: MTP3055E power supply schematic diagram dc-dc
Contextual Info: MTP3055E  N - CHANNEL 60V - 0.1Ω - 12A -TO-220 STripFET POWER MOSFET T YPE V DSS R DS o n ID MTP3055E 60 V < 0.15 Ω 12 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE

Contextual Info: MTP3055EL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-65

Contextual Info: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055VL TMOS V™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This

TMOS E-FET

Contextual Info: MOTOROLA Order this document by MTP3055VL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM

MTP3055V

Abstract: TMOS E-FET transistor MJ 122
Contextual Info: MOTOROLA Order this document by MTP3055V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP3055V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.15 OHM

MTP3055E

Abstract: stmicroelectronics datecode TO-220
Contextual Info: MTP3055E  N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET MOSFET T YPE MTP3055E • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE APPLICATION ORIENTED

MTP3055A

Abstract: HI SPEED ,TO-220, TRANSISTOR MTP3055AFI ld12a ISOWATT-220 Q2060 ISOWATT220
Contextual Info: MTP3055A MTP3055AFI / = T SGS-THOMSON *T Æ U[ » » I L I « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on MTP3055A MTP3055AFI 60 V 60 V 0.15 ß 0.15 Q •o ' 12 A 10 A • ULTRA FAST SWITCHING - UP TO > 100KHz • LOW DRIVE ENERGY FOR EASY DRIVE

MTP3055VL

Contextual Info: MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 12 A, 60 V. RDS ON = 0.18 Ω @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor

3055vl motorola

Abstract: 3055vl TP3055VL TP3055V Motorola 3055vl
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata S heet MTP3055VL TMOS V™ Power Field Effect Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate T M O S V is a n e w te c h n o lo g y d e s ig n e d to a c h ie v e a n o n - r e s is -

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

tp3055

Abstract: TP3055E
Contextual Info: Order this data sheet by MTP3055E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TP3055E TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced "E " series o f TMOS power MOSFETs is designed to w ithstand high energy in the avalanche and