TRANSISTOR 400V 500mA
Abstract: HLB1245
Text: HI-SINCERITY Spec. No. : HE200205 Issued Date : 2001.04.01 Revised Date : 2004.11.03 Page No. : 1/4 MICROELECTRONICS CORP. HLB1245 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HLB1245 is designed for high voltage, high speed switching inductive circuits,
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HE200205
HLB1245
O-220
HLB1245
183oC
217oC
260oC
TRANSISTOR 400V 500mA
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HTIP112
Abstract: HE-20
Text: HI-SINCERITY Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed
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HE200203
HTIP112
O-220
HTIP112
183oC
217oC
260oC
HE-20
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HTIP117
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE200204 Issued Date : 2000.08.01 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP117 is designed for use in general purpose amplifier and low-speed
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HE200204
HTIP117
O-220
HTIP117
183oC
217oC
260oC
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HTIP107
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6735 Issued Date : 1994.08.10 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP107 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP107 is designed for use in general purpose amplifier and low-speed switching applications.
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HE6735
HTIP107
O-220
HTIP107
183oC
217oC
260oC
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DARLINGTON TIN
Abstract: HTIP122
Text: HI-SINCERITY Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications.
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HE6712
HTIP122
O-220
HTIP122
183oC
217oC
260oC
DARLINGTON TIN
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DARLINGTON TIN
Abstract: HTIP127 transistor c-1000 transistor b 40 Ic-5A
Text: HI-SINCERITY Spec. No. : HE6713 Issued Date : 1993.01.13 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications.
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HE6713
HTIP127
O-220
HTIP127
183oC
217oC
260oC
DARLINGTON TIN
transistor c-1000
transistor b 40 Ic-5A
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HTIP102
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6734 Issued Date : 1995.02.08 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP102 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP102 is designed for use in general purpose amplifier and low-speed switching applications.
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HE6734
HTIP102
O-220
HTIP102
183oC
217oC
260oC
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BUH1015
Abstract: BUH1015HI T218 new 21 inch colour tv circuit diagram buh 415
Text: BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1015and BUH1015HI are manufactured
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BUH1015
BUH1015HI
BUH1015and
BUH1015HI
O-218
ISOWATT218
BUH1015
T218
new 21 inch colour tv circuit diagram
buh 415
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Untitled
Abstract: No abstract text available
Text: BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1015and BUH1015HI are manufactured
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BUH1015
BUH1015HI
BUH1015and
BUH1015HI
O-218
ISOWATT218
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JFET TRANSISTOR REPLACEMENT GUIDE j201
Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone
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U3750BM
U3760MB-FN
U3760MB-SD
SSO-44
SD-40
U3800BM
U3810BM
U4030B
U4030B
JFET TRANSISTOR REPLACEMENT GUIDE j201
UA6538
DC motor speed control using 555 and ir sensor
U2740B-FP
UAA145
CQY80
U2840B
tcrt9050
TCDF1910
sod80 smd zener diode color band
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ECG2561
Abstract: ECG2575 ECG2577 TO-220J ECG2580 npn 60 volts 7 Amps ECG2559 ECG2560 ECG2562 ECG2563
Text: Transistors con t'd ECG Typ« Description and Application (M axim um Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts bvcbo Collector To Emitter Volts b vCEO Base to Emitter Volts b v EBO Max. Collector Current l£ Amps Max. Device Diss. Pn
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ECG2559
ECG2560)
T48-3
ECG2560
ECG2559)
ECG2561
O-220
ECG2562
ECG2563)
ECG2575
ECG2577
TO-220J
ECG2580
npn 60 volts 7 Amps
ECG2563
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transistor ECG 152
Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application
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DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ECG 152
Bt 2313
transistor outlines
transistor ecg36
TRANSISTOR ecg 379
ECG157
123AP
transistor ECG 332
Philips ECG 152
ECG 3041
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transistor ecg36
Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo
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DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ecg36
transistor ECG 152
TRANSISTOR ecg 379
transistor. ECG 123AP
transistor ECG 332
ecg 126 transistor
TRANSISTOR ECG 69
TRANSISTOR Outlines
ecg 123 transistor
transistor pnp ecg 180
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NPN MATCHED PAIRS
Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58
Text: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60
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NTE58)
NTE61)
NTE60
NTE60)
NTE88)
NTE87
NTE87)
NTE88
b43125ci
NPN MATCHED PAIRS
200 watts audio amp power transistors pnp
NPN pnp MATCHED PAIRS
NTE388
NTE61
NTE60
NTE6061
PNP 5GHz
t0202
NTE58
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LM310M
Abstract: No abstract text available
Text: LM110/LM210/LM310 National Sem iconductor LM110/LM210/LM310 Voltage Follower General Description The LM110 series are monolithic operational amplifiers in ternally connected as unity-gain non-inverting amplifiers. They use super-gain transistors in the input stage to get low
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LM110/LM210/LM310
LM110/LM210/LM310
LM110
LM210
TL/H/7761-30
LM110H,
LM210H
LM310M
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TRANSISTOR FS 2025
Abstract: BUH1015
Text: SGS-THOMSON !LiM@iO gS BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION
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BUH1015
BUH1015HI
BUH1015and
BUH1015HI
TRANSISTOR FS 2025
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Untitled
Abstract: No abstract text available
Text: 7 T 2 S237 QQ26^21 M • '3 3 » / 3 SGS-THOMSON B U X 1 1 N S G S-THOMSON 30E D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX11 is a silicon multiepitaxial NPN transis tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in
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BUX11
7RST237
DGafi12M
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Bt 2313
Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Text: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts
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GGG71H7
ECG58
ECG59)
TB-35
T44-1
ECG59
ECG58)
ECG60
Bt 2313
Transistor 123AP
transistor t18 FET
transistor BD 263
transistor ECG 152
transistor ecg 226
123ap
Philips ECG 152
ic 2429
ECG24
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diode 1NU
Abstract: 2SK1115 diode 1NU 0 b
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- 7r-MOSm 2SK1115 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER,RELAY DRIVE AND HOTOR DRIVE APPLICATIONS. Unit in mm 3.6±0.2 10.3MAX. 3L1 FEATURES: • 4-Volt Gate Drive
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2SK1115
diode 1NU
2SK1115
diode 1NU 0 b
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TRANSISTOR 1300 1b
Abstract: No abstract text available
Text: TO SH IB A D I S C R E T E / O P T O 45E ß • T C H T B S D DDlTTfib □ ■ T0S4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP452 MOSI) T 1 INDUSTRIAL APPLICATIONS Unit ln HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
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YTFP452
IDSS-250uA
VDS-500V
250uA
Ta-25Â
IDR-12A
00A/us
TRANSISTOR 1300 1b
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YTF630
Abstract: V/YTF630
Text: YTF630 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S i i INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. U nit in mn CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 10.3MAX. I- ¿ 3 .6iO.2 - FEATURES:
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YTF630
00A/jus
YTF630
V/YTF630
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Untitled
Abstract: No abstract text available
Text: r z T SCS-THOM SON Ä 7 / KiilD £[Ri(o l[Llig¥!Hi [iSDei STV55N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STV55N06L V dss RDS(on) Id 60 V < 0.023 f l 55 A • . . . . . . . TYPICAL Rds(oii) = 0.02 Q AVALANCHE RUGGED TECHNOLOGY
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STV55N06L
---------0073fi
SO-10
0068039-C
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HA 1370 schematics
Abstract: CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND
Text: PRELIMINARY Semiconductor December 1990 NGM Series ABiC BiCMOS/ECL Gate Arrays General Description Features The NGM Series is a new family of mixed ECL and BiCMOS gale arrays based on National’s revolutionary 0.8 micron drawn ABiC BiCMOS process. The NGM Series is the first
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TL/U/10861-4
HA 1370 schematics
CMOS XNOR XOR NAND2 NAND3
ic ttl and not xor nor xnor or
MICRON POWER RESISTOR 2W
ECL IC NAND
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D40C7
Abstract: No abstract text available
Text: 27E D HARRI S S E M I C O N D S E CT OR • 43p22-?l 0020273 ö Bi HAS _ F ile N u m b e r D40C Series 15.1 0.5-Ampere N-P-N Darlington Power Transistors h p E M in. — 10,000 1.33 W att p o w e r d is s ip a tio n at
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43p22-
O-202AB
D40C-series
300ms
D40C7
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