STW18 Search Results

W18NK80Z

Abstract: mosfet w18nk80z w18nk80 STW18NK80Z 920 diode zener w18nk
Contextual Info: STW18NK80Z N-CHANNEL 800V - 0.34Ω - 19A TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STW18NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.38 Ω 19 A 350 W TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

stp18nm60n

Abstract: stw18nm60n STF18NM60N 18NM60N 18nm60 STB18NM60N
Contextual Info: STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB Order codes VDSS @Tjmax RDS(on) max. PTOT ID 3 STB18NM60N STF18NM60N

W18NK80Z

Abstract: STW18NK80Z
Contextual Info: STW18NK80Z N-CHANNEL 800V - 0.34Ω - 18A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW18NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.38 Ω 18 A 300 W TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STW18NB40

Abstract: STH18NB40FI stw18nb40-sth18nb40fi DSASW003744
Contextual Info: STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh MOSFET PRELIMINARY DATA TYPE STW18NB40 STH18NB40FI VDSS RDS on ID 400 V 400 V < 0.26 Ω < 0.26 Ω 18.4 A 12.4 A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY

STW18NB40

Abstract: STW18 STH18NB40FI
Contextual Info: STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh MOSFET PRELIMINARY DATA TYPE STW18NB40 STH18NB40FI • ■ ■ ■ ■ VDSS RDS on ID 400 V 400 V < 0.26 Ω < 0.26 Ω 18.4 A 12.4 A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY

STW18NK60Z

Abstract: W18NK60Z
Contextual Info: STW18NK60Z N-CHANNEL 600V - 0.27Ω - 16A TO-247 Zener-Protected SuperMESH MOSFET TYPE STW18NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V < 0.36 Ω 16 A 230 W TYPICAL RDS(on) = 0.27 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED

B2 marking code Zener

Abstract: w18nk zener 600v STW18NK60Z
Contextual Info: STW18NK60Z N-CHANNEL 600V - 0.27Ω - 16A TO-247 Zener-Protected SuperMESH MOSFET TYPE STW18NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V < 0.36 Ω 16 A 230 W TYPICAL RDS(on) = 0.27 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED

STP18N60M2

Contextual Info: STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A D PAK

W18NK80Z

Abstract: w18nk80 mosfet w18nk80z STW18NK80Z JESD97 w18nk 920 diode zener
Contextual Info: STW18NK80Z N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STW18NK80Z 800V <0.38Ω 19A 350W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

Contextual Info: STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 iì - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET PRELIMINARY DATA TYPE V dss RDS on Id STW 18N B 40 STH1 8N B40FI 400 V 400 V < 0.26 a < 0.26 a 18.4 A 12.4A • TYPICAL RDS(on) = 0.19 . EXTREMELY HIGH dv/dt CAPABILITY

STW18NB40

Contextual Info: STW18NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STW18NB40 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.26 Ω 18.4 A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features TAB Order code VDSS @ TJmax RDS on max ID 3 STF18N65M5 STI18N65M5

Contextual Info: STW18NK60Z N-CHANNEL 600V - 0.30Ω - 16A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW18NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V < 0.37 Ω 16 A 230 W TYPICAL RDS(on) = 0.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STW18NK60Z N-CHANNEL 600V - 0.27Ω - 16A TO-247 Zener-Protected SuperMESH MOSFET TYPE STW18NK60Z • VDSS RDS on ID Pw 600 V < 0.36 Ω 16 A 230 W TYPICAL RDS(on) = 0.27 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STW18NK60Z N-CHANNEL 600V - 0.30Ω - 16A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW18NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V < 0.37 Ω 16 A 230 W TYPICAL RDS(on) = 0.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STP18NM80

Contextual Info: STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features Order codes VDSS RDS on max ID STB18NM80 800 V < 0.295 Ω 17 A STF18NM80

STH18NB40FI

Abstract: STW18NB40
Contextual Info: STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh MOSFET PRELIMINARY DATA TYPE STW18NB40 STH18NB40FI • ■ ■ ■ ■ VDSS RDS on ID 400 V 400 V < 0.26 Ω < 0.26 Ω 18.4 A 12.4 A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY

18NM80

Abstract: STW18NM80 STB18NM80 STP18NM80 stf18nm80 STB18N
Contextual Info: STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB18NM80 800 V < 0.295 Ω 17 A 1 STF18NM80 800 V < 0.295 Ω 17 A TO-220 STP18NM80

1E-38

Abstract: 225E-9 1E38
Contextual Info: * MODELLING FOR STW18NB40 .SUBCKT stw18nb40 1 2 3 LG 2 4 7.5n LS 12 3 7.5n LD 6 1 4.5n RG 4 5 1.34 RS 9 12 0.697952E-05 RD 7 6 0.137722 RJ 8 7 0.925352E-03 CGS 5 9 2.25E-9 CGD 7 10 2.9E-09 CK 11 7 0.035E-09 DGD 11 7 DGD DBS 12 6 DBS DBD 9 7 DBD MOS 13 5 9 9 MOS L=1E-06 W=1e-6

STW18N65M5

Abstract: STP18N65M5 STF18N65M5 18n65m5 18N65
Contextual Info: STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages Datasheet — production data Features Order code VDSS @ TJmax RDS on max ID 3 STF18N65M5 STI18N65M5

Contextual Info: STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 D PAK VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A

H18NB40FI

Abstract: 18NB40 ST C 236 DIODE STW18NB40 STH18NB40FI ISS 184 diode
Contextual Info: STW18NB40 STH18NB40FI  N-CHANNEL 400V - 0.19Ω - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET PRELIMINARY DATA TYPE STW 18NB40 STH18NB40F I • ■ ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.26 Ω < 0.26 Ω 18.4 A 12.4A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY

18NM80

Abstract: W18NM80 STW18NM80 STB18NM80 STP18NM80 15421 stf18nm80
Contextual Info: STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB18NM80 800 V < 0.295 Ω 17 A STF18NM80 800 V < 0.295 Ω 17 A STP18NM80 800 V < 0.295 Ω

STF18NM60

Abstract: 18nm60
Contextual Info: STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 Ω typ., 13 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on)