STB18N Search Results

STB18N20

Abstract: isd 2100
Contextual Info: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STB18NF30

Contextual Info: STB18NF30 N-channel 330 V, 160 mΩ, 18 A STripFET II Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A • 100% avalanche tested ■ 175 °C junction temperature TAB 3 1 Applications

stp18nm60n

Abstract: stw18nm60n STF18NM60N 18NM60N 18nm60 STB18NM60N
Contextual Info: STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet — production data Features TAB Order codes VDSS @Tjmax RDS(on) max. PTOT ID 3 STB18NM60N STF18NM60N

Contextual Info: STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 N-channel 550 V, 0.150 Ω typ., 16 A, MDmesh V Power MOSFETs in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS on max ID 600 V 0.192 Ω

STP18N60M2

Contextual Info: STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A D PAK

STB18NF25

Abstract: STD18NF25 18NF25
Contextual Info: STB18NF25, STD18NF25 N-channel 250 V, 0.14 Ω, 17 A low gate charge STripFET II Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features Type VDSS RDS on max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω

B18n

Abstract: D2PACK STB18N20 B18N20
Contextual Info: STB18N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST B18N20 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

18NM60N

Abstract: STF18NM60 18nm60 stw18nm60 STI18NM60N STF18NM60N STB18NM60N STP18NM60N stw18nm60n STB18N
Contextual Info: STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 0.27 Ω, 13 A MDmesh II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK Features Order codes VDSS @Tjmax RDS(on) max. ID PW STB18NM60N 110 W STF18NM60N 30 W STI18NM60N

18n65m5

Abstract: STB18N65M5
Contextual Info: STB18N65M5, STD18N65M5 STF18N65M5, STP18N65M5 N-channel 650 V, 0.198 Ω, 15 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 packages Preliminary data Features Order code TAB VDSS @ TJmax RDS on max 2 ID STF18N65M5 710 V 2 3 3 1 1 D2PAK STB18N65M5

Contextual Info: STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features Order codes STB18N65M5 STD18N65M5 VDSS @ TJmax RDS on max ID TAB TAB 710 V < 0.22 Ω 15 A 2 2 3 3 1 D2PAK

STP18NM80

Contextual Info: STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features Order codes VDSS RDS on max ID STB18NM80 800 V < 0.295 Ω 17 A STF18NM80

18NF25

Abstract: STB18NF25 STD18NF25
Contextual Info: STB18NF25 STD18NF25 N-channel 250 V, 0.14 Ω, 17 A DPAK, D2PAK low gate charge STripFET II Power MOSFET Features Type VDSS RDS on max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W 3 • Low gate charge ■ 100% avalanche tested

18NM80

Abstract: STW18NM80 STB18NM80 STP18NM80 stf18nm80 STB18N
Contextual Info: STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB18NM80 800 V < 0.295 Ω 17 A 1 STF18NM80 800 V < 0.295 Ω 17 A TO-220 STP18NM80

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

Contextual Info: STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 2 D PAK VDS @ TJmax RDS on max ID 650 V 0.28 Ω 13 A

Contextual Info: r Z 7 S G S - T H O M S O N ^ 7# K0D « ^ i li O T 8@RSO<g S T B 1 8 N20 N - CHANNEL ENHANCEMENTIviODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STB18N20 V dss RDS on Id 200 V < 0.18Í2 18 A Q . TYPICAL RoS(on) = 0.145 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: STB18NF30 Automotive-grade N-channel 330 V, 160 mΩ typ., 18 A STripFET II Power MOSFET in a D²PAK package Datasheet - production data Features TAB Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A • Designed for automotive applications and

18NM80

Abstract: W18NM80 STW18NM80 STB18NM80 STP18NM80 15421 stf18nm80
Contextual Info: STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB18NM80 800 V < 0.295 Ω 17 A STF18NM80 800 V < 0.295 Ω 17 A STP18NM80 800 V < 0.295 Ω

STF18NM60

Abstract: 18nm60
Contextual Info: STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 Ω typ., 13 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on)

STF18NM60N

Abstract: 18NM60N transistor 18nm60n circuit diagram application STB18NM60N STI18NM60N STP18NM60N stf18nm60
Contextual Info: STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 0.27 Ω, 13 A MDmesh II Power MOSFET in TO-220, TO-220FP, TO-247, D2PAK and I2PAK Features VDSS @Tjmax Type RDS(on) max ID PW STB18NM60N 650 V < 0.285 Ω 13 A 110 W STF18NM60N

STB18N55

Abstract: STD18N55M STD18N55 stb18n55m5 STD18N55M5 ST 17078 STP18N55M5 STF18N55M5
Contextual Info: STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 Ω, 13 A, MDmesh V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 Features Order codes VDSS @TJmax STB18N55M5 STD18N55M5 STF18N55M5 STP18N55M5 RDS on max ID 3 1 3 1 DPAK D²PAK 550 V

STF18NM60N

Abstract: STF18NM60 STP18NM60N stw18nm60 18nm60n STB18NM60N transistor 18nm60n circuit diagram application 18nm60 marking code 5 Marking STMicroelectronics
Contextual Info: STB18NM60N, STF18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 13 A, TO-220, TO-220FP, TO-247, D2PAK second generation MDmesh Power MOSFET Preliminary data Features RDS on max Type VDSS (@Tjmax) STB18NM60N 600 V < 0.285 Ω 13 A 80 W STF18NM60N 600 V < 0.285 Ω 13 A 30 W

STB18N20

Contextual Info: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

18NF25

Contextual Info: STB18NF25 STD18NF25 N-channel 250 V, 0.14 Ω, 17 A DPAK, D2PAK low gate charge STripFET II Power MOSFET Features Type VDSS RDS on max ID PTOT STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W 3 • Low gate charge ■ 100% avalanche tested