STU10 Search Results

Contextual Info: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

STU10NB80

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STP105N3LLH7

Contextual Info: STD105N3LLH7, STP105N3LLH7, STU105N3LLH7 N-channel 30 V, 0.0025 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet — preliminary data Features TAB Type VDSS RDS on max ID STD105N3LLH7 30 V 0.0032 Ω 80 A

STD10N60M2

Abstract: STP10N60
Contextual Info: STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A STD10N60M2

10nm60n

Abstract: STD10NM60N 10NM60 STF10NM60N STP10NM60N STD10NM60 STU10NM60N 10nm6 std10n STP10
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS @TJmax Type RDS on max. Pw ID STD10NM60N 1 STF10NM60N STP10NM60N 650 V < 0.55 Ω 25 W 8A 3 3 70 W 2 1 TO-220

10nm60n

Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features Type VDSS RDS on max ID Pw STD10NM60N 600 V < 0.55 Ω 8A 70 W STF10NM60N 600 V < 0.55 Ω 8A 25 W STP10NM60N 600 V

STU10NC70Z

Abstract: STU10NC70ZI
Contextual Info: STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE STU10NC70Z STU10NC70ZI • ■ ■ ■ ■ ■ VDSS RDS on ID 700 V 700 V <0.75Ω <0.75Ω 9.4 A 9.4 A TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY

10NM60N

Abstract: 10nm60
Contextual Info: STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I²PAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB Order codes 3 VDSS @TJmax RDS on max.

10NM65N

Abstract: STP10NM65N STF10NM65N STU10NM65N JESD97 STD10NM65N
Contextual Info: STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh Power MOSFET Features RDS on max VDSS (@Tjmax) Type ID 3 2 STD10NM65N 710 V < 0.48 Ω 9A STF10NM65N 710 V < 0.48 Ω

Contextual Info: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED

10NM65N

Abstract: 10nm6 STU10 JESD97 STD10NM65N STF10NM65N STP10NM65N STU10NM65N
Contextual Info: STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features RDS on max VDSS (@Tjmax) Type ID 3 2 STD10NM65N 710 V < 0.48 Ω 9A STF10NM65N 710 V < 0.48 Ω 9 A(1) STP10NM65N

Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65ft - 10A - Max220 _PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 10N B80 • . . . . V dss R dS oii Id 800 V < 0.8 Q. 10 A TYPICAL R D S (on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel 60 V, 0.13 Ω typ., 10 A STripFET VI DeepGATE™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Features TAB Order codes 3 1 VDSS RDS on max ID 60 V 0.16 Ω 10 A

STU10NC70Z

Abstract: STU10NC70ZI
Contextual Info: STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE STU10NC70Z STU10NC70ZI • ■ ■ ■ ■ ■ VDSS RDS on ID 700 V 700 V <0.75Ω <0.75Ω 9.4 A 9.4 A TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY

10nm60n

Abstract: 10NM60 STF10NM60N Stp10nm60 STU10NM60N
Contextual Info: STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes RDS on max. VDSS @TJmax Pw

10nm60n

Abstract: 10NM60 STD10NM60N STP10NM60N STF10NM60N STF10NM60 10nm6 STU10NM60N STMicroelectronics DIODE marking code stp10
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features Type VDSS RDS on max ID Pw STD10NM60N 600 V < 0.55 Ω 8A 70 W STF10NM60N 600 V < 0.55 Ω 8A 25 W STP10NM60N 600 V

U10NB80

Abstract: 55AV U10NB STU10NB80
Contextual Info: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE ST U10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STU10NA50

Contextual Info: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED

100N3LF3

Abstract: JESD97 STD100N3LF3 STU100N3LF3
Contextual Info: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

STD10N60M2

Contextual Info: STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V

Contextual Info: STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel 60 V, 0.13 Ω typ., 10 A STripFET VI DeepGATE™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Features TAB Order codes 3 1 VDSS RDS on max ID 60 V 0.16 Ω 10 A

STU10NA50

Abstract: V8012
Contextual Info: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED

10NM60

Abstract: 10NM60N STD10NM60N STP10NM60N STF10NM60N STU10NM60N STP1 Stp10nm60 10nm6
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features Order codes VDSS @TJmax RDS on max. Pw ID STD10NM60N 1 STF10NM60N STP10NM60N 650 V < 0.55 Ω 25 W 10 A 3 3 70 W 2

Contextual Info: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package