STD10N Search Results

STD10NF06L

Abstract: STD10NF06
Contextual Info: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L • ■ VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 DESCRIPTION

STD10N60M2

Abstract: STP10N60
Contextual Info: STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A STD10N60M2

STD10NF06L

Contextual Info: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L • ■ VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) 3 1 DESCRIPTION

STD10NF06

Abstract: STD10NF06L 6-8 B1
Contextual Info: STD10NF06L N-CHANNEL 60V - 0.1Ω - 10A DPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD10NF06L VDSS RDS on ID 60V <0.12Ω 10A TYPICAL RDS(on) = 0.1Ω SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) • ■ 3 1 DESCRIPTION

10nm60n

Abstract: STD10NM60N 10NM60 STF10NM60N STP10NM60N STD10NM60 STU10NM60N 10nm6 std10n STP10
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS @TJmax Type RDS on max. Pw ID STD10NM60N 1 STF10NM60N STP10NM60N 650 V < 0.55 Ω 25 W 8A 3 3 70 W 2 1 TO-220

10nm60n

Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features Type VDSS RDS on max ID Pw STD10NM60N 600 V < 0.55 Ω 8A 70 W STF10NM60N 600 V < 0.55 Ω 8A 25 W STP10NM60N 600 V

10NM50N

Abstract: STP10NM50 am08150 STF10NM50N
Contextual Info: STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh II Power MOSFET Features VDSS @Tjmax Type TAB RDS(on) max ID 3 1 STD10NM50N STF10NM50N 550 V < 0.63 Ω 3 1 DPAK 7A 2 TO-220FP TAB STP10NM50N • 100% avalanche tested

10NM60

Abstract: 10nm6 STF10NM60 STD10NM60 10NM60ND STF10NM60ND stp10nm60 STD10NM60N STD10NM60ND 10nm60n
Contextual Info: STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220, TO-220FP FDmesh II Power MOSFET Features Order codes VDSS @TJmax RDS on max. ID 650 V < 0.6 Ω 8A STD10NM60N STF10NM60N 3 STP10NM60N • 1 The worlwide best RDS(on)*area amongst the

10NM60N

Abstract: 10nm60
Contextual Info: STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I²PAK, TO-220 and IPAK packages Datasheet - production data Features TAB TAB Order codes 3 VDSS @TJmax RDS on max.

10NM65N

Abstract: STP10NM65N STF10NM65N STU10NM65N JESD97 STD10NM65N
Contextual Info: STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh Power MOSFET Features RDS on max VDSS (@Tjmax) Type ID 3 2 STD10NM65N 710 V < 0.48 Ω 9A STF10NM65N 710 V < 0.48 Ω

STD10NM50N

Abstract: STP10NM50N STP10NM50 STF10NM50N
Contextual Info: STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features VDSS @Tjmax Type RDS(on) max ID 3 3 STD10NM50N STF10NM50N 1 550 V < 0.63 Ω 2 1 TO-220 TO-220FP 7A 2 STP10NM50N • 100% avalanche tested

10NM65N

Abstract: 10nm6 STU10 JESD97 STD10NM65N STF10NM65N STP10NM65N STU10NM65N
Contextual Info: STD10NM65N - STF10NM65N STP10NM65N - STU10NM65N N-channel 650 V, 0.43 Ω, 9 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features RDS on max VDSS (@Tjmax) Type ID 3 2 STD10NM65N 710 V < 0.48 Ω 9A STF10NM65N 710 V < 0.48 Ω 9 A(1) STP10NM65N

D72B

Abstract: 100DC QCB4200 STD10N10L ABS 10 diode
Contextual Info: r= 7 SGS-THOMSON ^ 7 / KiilD Elffl IILiCTIB@li!lD(ES STD10N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD10N10L V dss RoS(on Id 100 V < 0.2 Q 10 A • . . . . . . . TYPICAL R D S (o n ) = 0.16 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

g072b

Contextual Info: / = T SGS-THOMSON • 7 # Mlgß«[LliOT»OTI]6 STD10N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R dS oii Id STD10N10 100 V < 0.2 a 10 A . . . . . . . . TYPICAL Ros(on) = 0.135 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCH E DATA AT 100°C

STD10NF10

Contextual Info: STD10NF10 N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD10NF10 100 V <0.13 Ω 13 A TYPICAL RDS(on) = 0.115Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION

10nm60n

Abstract: STF10NM60N STD10NM60N STP10NM60N STF10NM60 to-252 p channel vgs 12v 10NM60 STU10NM60N 10nm6
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS @TJmax Type RDS on max. Pw ID STD10NM60N 1 STF10NM60N STP10NM60N 650 V < 0.55 Ω 25 W 8A 3 3 70 W 2 1 TO-220

10nm60n

Abstract: 10NM60 STF10NM60N Stp10nm60 STU10NM60N
Contextual Info: STD10NM60N, STF10NM60N, STI10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features TAB Order codes RDS on max. VDSS @TJmax Pw

Contextual Info: STD10NF10 STD10NF10-1 N-channel 100V - 0.115Ω - 13A - DPAK - IPAK Low gate charge STripFET II Power MOSFET General features Type VDSSS RDS on ID STD10NF10 100V <0.13Ω 13A STD10NF10-1 100V <0.13Ω 13A • Exceptional dv/dt capability ■ Application oriented characterization

10nm60n

Abstract: 10NM60 STD10NM60N STP10NM60N STF10NM60N STF10NM60 10nm6 STU10NM60N STMicroelectronics DIODE marking code stp10
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features Type VDSS RDS on max ID Pw STD10NM60N 600 V < 0.55 Ω 8A 70 W STF10NM60N 600 V < 0.55 Ω 8A 25 W STP10NM60N 600 V

STD10NF10

Contextual Info: STD10NF10 N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD10NF10 100 V <0.13 Ω 13 A TYPICAL RDS(on) = 0.115Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION

STD10N60M2

Contextual Info: STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V

10NM60

Abstract: 10NM60N STD10NM60N STP10NM60N STF10NM60N STU10NM60N STP1 Stp10nm60 10nm6
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features Order codes VDSS @TJmax RDS on max. Pw ID STD10NM60N 1 STF10NM60N STP10NM60N 650 V < 0.55 Ω 25 W 10 A 3 3 70 W 2

TO-252 MOSFET

Contextual Info: STD10NF10 N-CHANNEL 100V - 0.16Ω - 10A TO-252 LOW GATE CHARGE STripFET POWER MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STD10NF10 100V <0.18Ω 10A TYPICAL RDS(on) = 0.16Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION

Contextual Info: STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STD10NF30 300 V 0.33 Ω 10 A • Designed for automotive applications and