STP10 Search Results

10n62k3

Abstract: STF10N62K3 STI10N62K3 STF10N62K3 ST 10N6 10n62
Contextual Info: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3

SuperSPARC

Abstract: Mbus master 250 slave circuit tmx390 STP1091-60
Contextual Info: S un M icroelectronics July 1997 Multi-Cache Controller DATA SHEET Integrated Cache Controller for SuperSPARC D e s c r ip t io n The STP1091 is a high-performance external cache controller for the STP1020 SuperSPARC and STP1021 (SuperSPARC-II) microprocessors. It is used when a large secondary cache or an interface to a non-MBus sys­

supersparc

Contextual Info: Preliminary STP5010A SPARC Technology Business November 1994 5 0 MHz SuperSPARC MBus Module DATA SHEET SuperSPARC Only MBus Module D e s c r i p t io n The STP5010A is one of the members of the SuperSPARC based MBus module products. The STP5010A is designed with the latest high performance superscalar SuperSPARC STP1020A micro­

STP10NC50

Abstract: STP10NC50FP
Contextual Info: STP10NC50 STP10NC50FP N - CHANNEL 500V - 0.48Ω - 10A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STP10NC50 STP10NC50FP 500 V 500 V < 0.52 Ω < 0.52 Ω 10 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY

10N62K3

Contextual Info: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3

STP105N3LLH7

Contextual Info: STD105N3LLH7, STP105N3LLH7, STU105N3LLH7 N-channel 30 V, 0.0025 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet — preliminary data Features TAB Type VDSS RDS on max ID STD105N3LLH7 30 V 0.0032 Ω 80 A

Contextual Info: STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 Ω typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - preliminary data Features TAB Order codes 3 1 1 TO-220FP RDS on max ID PTOT STF10N95K5 3

STD10N60M2

Abstract: STP10N60
Contextual Info: STD10N60M2, STP10N60M2, STU10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A STD10N60M2

100N10F7

Contextual Info: STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max 100 V 0.008 Ω STD100N10F7 STF100N10F7

p100NF

Abstract: B100NF03L B100NF STB100NF03L-03T4 JESD97 STB100NF03L-03 STB100NF03L-03-1 STP100NF03L-03 P100NF03L ISD 1720
Contextual Info: STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-1 N-channel 30V - 0.0026Ω - 100A - D2PAK/I2/TO-220 STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NF03L-03 30V <0.0032Ω 100A STB100NF03L-03-1 30V <0.0032Ω 100A STP100NF03L-03 30V

Contextual Info: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STP1012 S un M ic r o e l e c t r o n ic s J u ly 1997 microSPARC -ll DATA SHEET SPARC v8 32-Bit Microprocessor With DRAM Interface D e s c r ip t io n The microSPARC-II 32-bit m icroprocessor is a highly integrated, high-perform ance microprocessor. Im ple­

Supersparc

Abstract: IEEE754 STP1021A
Contextual Info: STP1021A July 1997 SuperSPARC -II DATA SHEET SPARC v8 32-Bit Superscalar Microprocessor DESCRIPTION The STP1021A is a new member of the SuperSPARC-II family of microprocessor products. Like its predecessors STP1020N, STP1020 and STP1021 this new part is fully SPARC Version 8 compliant and is completely upward compatible with the earlier SPARC Version 7 implementations running over 9,400 SPARC applications and development

GIGABYTE G31

Abstract: SPARC v9 architecture BLOCK DIAGRAM stream register cache coherency snoop filter AF10 AH22 "64-Bit Microprocessor" STP1030 d4ta
Contextual Info: STP1030A July 1997 UltraSPARC -I DATA SHEET First Generation SPARC v9 64-Bit Microprocessor With VIS DESCRIPTION The STP1030A, UltraSPARC–I, is a high-performance, highly-integrated superscalar processor implementing the SPARC V9 64-bit RISC architecture. The STP1030A is capable of sustaining the execution of up to four instructions per

STP1080A

Abstract: IEEE1149
Contextual Info: STP1080A July 1997 UltraSPARC -I Data Buffer UDB-I DATA SHEET Companion Device for 167/200 MHz UltraSPARC-I Systems DESCRIPTION The UDB-I is a data buffer device used in UltraSPARC-I systems to connect the CPU and its external SRAM cache bus to the system bus:

10N65K3

Contextual Info: STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes 3 1 1 RDS on max ID PTOT STB10N65K3 3 D2PAK

Contextual Info: STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 N-channel 950 V, 0.65 Ω typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet - production data Features TAB Order codes 3 1 2 D PAK 3 VDS RDS on max ID PTOT

P10NC50

Abstract: P10NC50FP dc welding circuit diagram STP10NC50FP STP10NC50
Contextual Info: STP10NC50 STP10NC50FP  N - CHANNEL 500V - 0.48Ω - 10A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P10NC50 ST P10NC50FP 500 V 500 V < 0.52 Ω < 0.52 Ω 10 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY

STP100NF04L

Abstract: ISD 100a
Contextual Info: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION

10nm60n

Abstract: STD10NM60N 10NM60 STF10NM60N STP10NM60N STD10NM60 STU10NM60N 10nm6 std10n STP10
Contextual Info: STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω, 8 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET Features VDSS @TJmax Type RDS on max. Pw ID STD10NM60N 1 STF10NM60N STP10NM60N 650 V < 0.55 Ω 25 W 8A 3 3 70 W 2 1 TO-220

f10nk50z

Abstract: P10NK50Z P10NK50 f10nk50 stp10nk50z Marking STMicroelectronics to220
Contextual Info: STP10NK50Z STF10NK50Z N-CHANNEL 500V - 0.55Ω - 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STP10NK50Z STF10NK50Z 500 V 500 V < 0.7 Ω < 0.7 Ω 9A 9 A(*) 125 W 30 W • ■

P10NB50

Abstract: P10NB5 STP10NB50 F2 diode
Contextual Info: STP10NB50  N - CHANNEL 500V - 0.55Ω - 10.6A - TO-220 PowerMESH MOSFET TYPE ST P10NB50 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.60 Ω 10.6 A TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

P10NK80

Abstract: p10nk80zfp w10nk80z P10NK80Z p10nk80zfp equivalent w10nk80 p10nk STP10NK80Z zener diode 3.0 b2 w10nk
Contextual Info: STP10NK80ZFP STP10NK80Z - STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-Protected SuperMESH MOSFET General features Type VDSS Package RDS on STW10NK80Z 800 V <0.90 Ω STP10NK80Z 800 V <0.90 Ω STP10NK80ZFP 800 V <0.90 Ω ID Pw 9A

STP100NF03L-03

Abstract: ISD 1720
Contextual Info: STP100NF03L-03 N-CHANNEL 30V - 0.0026Ω - 100A TO-220 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STP100NF03L-03 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION