10N6 Search Results

10N6 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK110N65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-247	Datasheet

10N6 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
10N60	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.92KB	9
10N60-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.92KB	9
10N60-B-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.91KB	9
10N60C5M	IXYS	CoolMOS Power MOSFET	Original	PDF	102.64KB	4
10N60L-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.93KB	9
10N65A	AK Semiconductor	10A 650V N-channel enhancement mode MOSFET with typical on-resistance of 0.8 ohm at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability.	Original	PDF
10N65B	AK Semiconductor	N-channel MOSFET 10N65B with 650V drain-source voltage, 10A continuous drain current, 0.8 ohm typical on-resistance at 10V gate-source voltage, and TO-220/TO-263 package options.	Original	PDF
10N60A	AK Semiconductor	10A 600V N-channel enhancement mode MOSFET with low on-resistance of 0.75 ohm typical at VGS = 10V, available in TO-220F, TO-220C, and TO-263 packages, featuring high dv/dt capability and 100% avalanche tested performance.	Original	PDF
10N60B	AK Semiconductor	10A, 600V N-channel enhancement mode MOSFET with typical on-resistance of 0.6 ohms at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability.	Original	PDF
MDD10N65F	Microdiode Semiconductor	650V N-Channel MOSFET, 10A, 1Ω@VGS=10V, 34.2nC Qg, TO-220F-3L/TO-220-3L, ultra low gate charge, fast switching, avalanche energy tested.	Original	PDF
SL10N65F	SLKOR	10.0A, 650V, RDS(on)=0.80Ω@VGS=10V, Low Gate Charge, Low Crss, 100% Avalanche Tested, Fast Switching, Improved dv/dt Capability.	Original	PDF
JMPF10N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.90 ohm at VGS = 10V, designed for fast switching and power management applications.	Original	PDF
JMPC10N65BJ	Jiangsu JieJie Microelectronics Co Ltd	650V, 10A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 1.09 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications.	Original	PDF
SK10N65B-TF	Shikues Semiconductor	650V N-ch Planar MOSFET, RoHS Compliant, DS(ON),typ.=0.75 Ω@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, Adaptor, Charger, SMPS Standby Power.	Original	PDF

SLF10N65S	Maplesemi	650V N-Channel MOSFET with 10A continuous drain current, 0.8 ohm typical RDS(on) at VGS = 10V, low gate charge of 28.5nC, and high avalanche ruggedness, suitable for high-efficiency power conversion applications.	Original	PDF
SLP_F10N65A	Maplesemi	650V N-Channel MOSFET with 10A continuous drain current, 0.745 ohm typical RDS(on) at VGS = 10V, low gate charge of 19nC, and fast switching capability, suitable for high-efficiency power conversion applications.	Original	PDF
SLF10N60S	Maplesemi	600V N-Channel MOSFET with 10A continuous drain current, 0.75Ω typical RDS(on) at VGS = 10V, low gate charge of 28.3nC, and 100% avalanche tested for high reliability in switching applications.	Original	PDF
SLF10N65C	Maplesemi	650V N-Channel MOSFET with 10A continuous drain current, 0.678 ohm typical RDS(on) at VGS=10V, low gate charge of 38nC, and fast switching for high-efficiency power applications.	Original	PDF
SLP_F10N65C	Maplesemi	650V N-Channel MOSFET with 10A continuous drain current, 0.85Ω maximum RDS(on) at VGS = 10V, low gate charge of 48nC typical, suitable for high-efficiency power conversion applications.	Original	PDF
JMPC10N60BJ	Jiangsu JieJie Microelectronics Co Ltd	600V, 10A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.9 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability.	Original	PDF

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onsemi NTMT110N65S3HF POWER MOSFET, N-CHANNEL, SUPERFE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	NTMT110N65S3HF	Cut Tape	2,500		1	1 $8.52 10 $5.81 100 $4.56 1000 $4.56 10000 $4.56	Buy Now
	NTMT110N65S3HF	Digi-Reel	2,500		1	1 $8.52 10 $5.81 100 $4.56 1000 $4.56 10000 $4.56	Buy Now
Avnet Americas	NTMT110N65S3HF	Tape & Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $4.03	Get Quote
Mouser Electronics	NTMT110N65S3HF		3,356			1 $8.48 10 $5.82 100 $4.56 1000 $4.29 10000 $4.06	Buy Now
Newark	NTMT110N65S3HF	Cut Tape	2,883		1	1 $8.96 10 $7.09 100 $6.48 1000 $6.48 10000 $6.48	Buy Now
Rochester Electronics	NTMT110N65S3HF		19,191		1	1 - 10 - 100 $3.73 1000 $3.34 10000 $3.14	Buy Now

Richardson RFPD	NTMT110N65S3HF				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	NTMT110N65S3HF			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTMT110N65S3HF			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTMT110N65S3HF		5,690			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wuhan P&S	NTMT110N65S3HF		2,625		1	1 $10.39 10 $10.39 100 $6.64 1000 $5.03 10000 $5.03	Buy Now
PanJit Group PJMF210N65EC_T0_00601 650V/ 390MOHM / 10A/ EASY TO DRI
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DigiKey	PJMF210N65EC_T0_00601	Tube	1,953		1	1 $2.68 10 $2.68 100 $1.19 1000 $0.88 10000 $0.88	Buy Now
STMicroelectronics STL10N65M2 MOSFET N-CH 650V 4.5A POWERFLAT
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DigiKey ()	STL10N65M2	Cut Tape	1,826		1	1 $2.17 10 $1.39 100 $0.94 1000 $0.72 10000 $0.72	Buy Now
	STL10N65M2	Digi-Reel	1,826		1	1 $2.17 10 $1.39 100 $0.94 1000 $0.72 10000 $0.72	Buy Now
Avnet Americas	STL10N65M2	Tape & Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.63	Buy Now
STMicroelectronics	STL10N65M2				1	1 $2.08 10 $1.36 100 $0.92 1000 $0.74 10000 $0.74	Buy Now
Avnet Silica	STL10N65M2		3,000	15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STL10N65M2			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

IBS Electronics	STL10N65M2				1	1 $0.87 10 $0.87 100 $0.87 1000 $0.87 10000 $0.87	Buy Now
STMicroelectronics STFI10N65K3 MOSFET N-CH 650V 10A I2PAKFP
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DigiKey	STFI10N65K3	Tube	1,499		1	1 $3.39 10 $3.39 100 $1.57 1000 $1.35 10000 $1.35	Buy Now
Avnet Americas	STFI10N65K3	Tube			1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STFI10N62K3 MOSFET N CH 620V 8.4A I2PAKFP
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DigiKey	STFI10N62K3	Tube	1,494		1	1 $2.37 10 $2.37 100 $1.71 1000 $1.45 10000 $1.45	Buy Now

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10N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743	PDF
10n65 Abstract: tf 10n65 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	10N65 10N65 QW-R502-588 tf 10n65	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N65K 10N65K 10N65KL-TF3-T 10N65KG-TF3-T O-220F 10N65KL-TF1-T 10N65KG-TF1-hat QW-R02-755	PDF
10N60G Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l	PDF
Contextual Info: Photoelectric sensors FVDK 10N67Y0/S35A dimension drawing general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange adjustment	Original	10N67Y0/S35A 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N67YR dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display	Original	10N67YR 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69YB 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69YB 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display	Original	10N69Y0 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69Y0 dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69Y0 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange	Original	10N67YS 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N67Y0 dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display	Original	10N67Y0 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69YR Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display	Original	10N69YR 200C1002) 200C1003)	PDF

Contextual Info: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange	Original	10N67YS 200C1002) 200C1003)	PDF
Contextual Info: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C	Original	10N60C5 O-220	PDF
10n60b Contextual Info: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b	PDF
10n60p Abstract: d 1065 Contextual Info: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V	Original	10N60P O-220 O-263 O-263) O-263 10n60p d 1065	PDF
10N60C Abstract: IXKP10N60C5 Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080523b 10N60C IXKP10N60C5	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	10N60K-MT 10N60K-MT QW-R205-022	PDF
Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20090209d	PDF
Contextual Info: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
diode DSDI 9 Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B	OCR Scan	O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A	PDF
10N60A Abstract: IGBT 10N60 10N6Q Contextual Info: nixYS ^ 10N60 IXGA/IXGH 10N60A \|g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s	OCR Scan	IXGH10N60 10N60A O-263 O-247 10N60 10N60A 10N60U1 10N60AU1 D94006DE, IGBT 10N60 10N6Q	PDF

10N6 Search Results

10N6 Result Highlights (1)

10N6 Datasheets (26)

10N6 Price and Stock

onsemi NTMT110N65S3HF

PanJit Group PJMF210N65EC_T0_00601

STMicroelectronics STL10N65M2

STMicroelectronics STFI10N65K3

STMicroelectronics STFI10N62K3

10N6 Datasheets Context Search

10n65

10N60G

10n60b

10n60p

10N60C

diode DSDI 9

10N60A