STP1 Search Results

STP13NM60

Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Contextual Info: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N

10n62k3

Abstract: STF10N62K3 STI10N62K3 STF10N62K3 ST 10N6 10n62
Contextual Info: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3

SuperSPARC

Abstract: Mbus master 250 slave circuit tmx390 STP1091-60
Contextual Info: S un M icroelectronics July 1997 Multi-Cache Controller DATA SHEET Integrated Cache Controller for SuperSPARC D e s c r ip t io n The STP1091 is a high-performance external cache controller for the STP1020 SuperSPARC and STP1021 (SuperSPARC-II) microprocessors. It is used when a large secondary cache or an interface to a non-MBus sys­

supersparc

Contextual Info: Preliminary STP5010A SPARC Technology Business November 1994 5 0 MHz SuperSPARC MBus Module DATA SHEET SuperSPARC Only MBus Module D e s c r i p t io n The STP5010A is one of the members of the SuperSPARC based MBus module products. The STP5010A is designed with the latest high performance superscalar SuperSPARC STP1020A micro­

P11NM60AFP

Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
Contextual Info: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω

STP16NE06L

Abstract: STP16NE06LFP
Contextual Info: STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V DSS R DS on ID STP16NE06L STP16NE06LFP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY

Contextual Info: STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D2PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB160N75F3 75V 4.2mΩ 120A (1) STP160N75F3 75V 4.5mΩ 120A (1) STW160N75F3

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

STP11NB40FP

Abstract: STP11NB40
Contextual Info: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID STP11NB40 STP11NB40FP 400 V 400 V < 0.55 Ω < 0.55 Ω 10.7 A 6.0 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY

STP19N06L

Abstract: STP19N06LFI
Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY

STP12NM50FP

Abstract: STP12NM50 12NM50 STB12NM50 STB12NM50-1
Contextual Info: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 500V - 0.30Ω - 12A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP12NM50/FP STB12NM50 STB12NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.35Ω <0.35Ω <0.35Ω 12 A 12 A 12 A

11NM60

Abstract: STP11NM60FP STB11NM60 STB11NM60-1 STP11NM60
Contextual Info: STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS RDS on 600 V 600 V 600 V 600 V < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω

STP14NF10FP

Abstract: STB14NF10 STP14NF10
Contextual Info: STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB14NF10 STP14NF10 STP14NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.13 Ω <0.13 Ω <0.13 Ω 15 A

STP16C596A

Abstract: STP16C596 STP16C DIP-24 TSSOP24
Contextual Info: STP16C596A 16-BIT CONSTANT CURRENT LED SINK DRIVER • ■ ■ ■ ■ ■ ■ ■ 16 CONSTANT CURRENT OUTPUT CHANNELS ADJUSTABLE OUTPUT CURRENT THROUGH EXTERNAL RESISTOR SERIAL DATA IN/PARALLEL DATA OUT SERIAL OUT CHANGE STATE ON THE FALLING EDGES OF CLOCK

STD150N3LLH6

Abstract: 150N3LLH6 STP150N3LLH6 stp150n3 TO-251 footprint STU150N3LLH6
Contextual Info: STD150N3LLH6 STP150N3LLH6, STU150N3LLH6 N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD150N3LLH6 30 V 0.0028 Ω 80 A STP150N3LLH6 30 V 0.0033 Ω 80 A STu150N3LLH6 30 V 0.0033 Ω

STP10NC50

Abstract: STP10NC50FP
Contextual Info: STP10NC50 STP10NC50FP N - CHANNEL 500V - 0.48Ω - 10A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STP10NC50 STP10NC50FP 500 V 500 V < 0.52 Ω < 0.52 Ω 10 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY

STP12PF06

Contextual Info: STP12PF06 P - CHANNEL 60V - 0.18 Ω - 12A TO-220 STripFET POWER MOSFET TYPE STP12PF06 • ■ ■ ■ ■ VDSS R DS on ID 60 V < 0.20 Ω 12 A TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED

P130NS04ZB

Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
Contextual Info: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A

SP1113P

Abstract: STP1417 bicron pull type solenoid coils
Contextual Info: BICRON Electronics Company ISO 9001 CERTIFIED SP1113P Previously STP1417 Push/Pull Type Tubular Solenoid 0.45” Dia. ‫ ؂‬0.52” L (11mm ‫ ؂‬13mm) Specifications: Force vs. Stroke 18 [0.51] Insulation: . . . . . . . . . . . . . . Class “A” (105°C) standard*

p11nm60fdfp

Abstract: equivalent to220 p11nm60fd STB11NM60FD-1 STP11NM60FD STP11NM60FDFP ZVS phase-shift converters MOSFET 400V TO-220
Contextual Info: STP11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V - 0.40Ω - 11A TO-220 / TO-220FP/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD-1 VDSS RDS(on) ID 600 V 600 V 600 V < 0.45Ω < 0.45Ω < 0.45Ω 11 A 11 A

p11nk50zfp

Abstract: P11NK50Z P11NK50 B11NK50Z STP11NK50ZFP STB11NK50Z STB11NK50ZT4 STP11NK50Z
Contextual Info: STP11NK50Z - STP11NK50ZFP STB11NK50Z N-CHANNEL 500V - 0.48Ω - 10A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STB11NK50Z STP11NK50Z STP11NK50ZFP • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.52 Ω < 0.52 Ω

1313L1

Abstract: STD17N25 STF17N25
Contextual Info: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω

pull type solenoid coils

Abstract: BICRON SP1414P STP1717 042oz 055l SP1414P03
Contextual Info: BICRON Electronics Company ISO 9001 CERTIFIED SP1414P Previously STP1717 Push/Pull Type Tubular Solenoid 0.55” Dia. ‫ ؂‬0.55” L (14mm ‫ ؂‬14mm) Specifications: Force vs. Stroke Operation: . . . . . . . . . . . . . . Push/Pull 40 [1.14] Insulation: . . . . . . . . . . . . . . Class “A” (105°C) standard*

15N80K5

Abstract: STP15N80K5 STF15N80K5 stf15N80k
Contextual Info: STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Type VDS RDS on max ID STB15N80K5 STF15N80K5 STP15N80K5