SI4403BDY Search Results

Si4403BDY

Abstract: Si4403BDY-T1
Contextual Info: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7

4833

Abstract: 8891 AN609 Si4403BDY 1.2309
Contextual Info: Si4403BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

MOSFET SO-8

Contextual Info: Specification Comparison Vishay Siliconix Si4403CDY vs. Si4403BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4403CDY-T1-GE3 replaces Si4403BDY-T1-GE3 Si4403CDY-T1-GE3 replaces Si4403BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403BDY

Contextual Info: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7

Si4403BDY

Abstract: Si4403BDY-T1 Si4403BDY-T1-E3
Contextual Info: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available

Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403BDY

Abstract: Si4403BDY-T1 Si4403BDY-T1-E3 Si4403DY
Contextual Info: Specification Comparison Vishay Siliconix Si4403BDY vs. Si4403DY Description: P-Channel, 1.8 V G-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4403BDY Replaces Si4403DY Si4403BDY-E3 (Lead (Pb)-free version) Replaces Si4403DY Si4403BDY-T1 Replaces Si4403DY-T1

A1818

Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403BDY

Abstract: Si4403BDY-T1-E3 Si4403BDY-T1-GE3
Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

SI4403BDY-T1-GE3

Abstract: Si4403BDY Si4403BDY-T1-E3
Contextual Info: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition

Si4403BDY

Contextual Info: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

A1818

Contextual Info: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

slym065

Abstract: VIN VIN VOUT RSENSE TPS40200 PTH08T2xx CTJ112 CoolRunner-II CPLD GX SOT23 ss3 sot23 TPS75003 TPS78601 TPS79201
Contextual Info: TM Technology for Innovators TM An Analog Product Catalog ➔ Inside Low Dropout Regulators High-Performance RF LDOs .3 Ultra-Low Dropout Linear Regulators with Soft-Start and Tracking.3 2Q 2007 Power Management Solutions

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs