RF58 Search Results

Contextual Info: RF5836 4.9GHz TO 5.85GHz 802.11a/n FRONT END MODULE          2 GND SW TX SW RX SP2T 12 GND 11 ANT 10 GND 9 PDET Coupler Detector PA 3 TX_IN 2fo filter GND 4 5 6 7 8 Functional Block Diagram Product Description Applications  GND

Contextual Info: RF5840 RF5840 11b/g/n WiFi SP3T Switch 11b/g/n WiFi SP3T SWITCH Features   Low Switch Control Voltage 1.5V Minimum Low Insertion Loss 0.8dB TX_IN GND Package: QFN, 10-Pin, 1.75mm x 1.75mm x 0.5mm 10 9 C_Tx 1 8 Rx ANT 2 7 GND Vdd 3 6 Applications 

Contextual Info: RF5840 RF5840 11b/g/n WiFi SP3T Switch 11b/g/n WiFi SP3T SWITCH Features   Low Switch Control Voltage 1.5V Minimum Low Insertion Loss 0.8dB TX_IN GND Package: QFN, 10-Pin, 1.75mm x 1.75mm x 0.5mm 10 9 C_Tx 1 8 Rx ANT 2 7 GND Vdd 3 6 Applications 

IEEE802.11a/b/g

Abstract: RF5824 RF5824PCBA-41X transistor 11a
Contextual Info: RF5824 Preliminary 3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE Typical Applications • IEEE802.11a/b/g and IEEE802.11n WLAN • 2.5GHz and 5GHz ISM Bands Applications • Wireless LAN Systems Applications • Single-Chip RF Power Amplifier Module • Portable Battery-Powered Equipment

K794

Abstract: K-794 KM-66 Motorola Magnetic Mount Antenna Kit KD66N
Contextual Info: Replacement Rooftop and Magnet Mounts Low Profile Antenna Mounts Male-Female Mounts: Model KD66 Series Heavy Duty Magnet Mount Deluxe replacement 3/4 inch 19.1 mm diameter hole mount for A/S low profile antennas. Furnished with 17 ft (5.2 m) of PRO-FLEX cable, PL-259 connector

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N5109 motorola

Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

RF5117

Abstract: RF2163 RF5126 wlan pre RF2373 RF5163 RF5263 RF5373 RF5924 power amplifier mmic design high efficiency
Contextual Info: Optimum Technology Matching [H GaAs HBT 25 GHz FT, 2 Micron, High Efficiency, High Dynamic Range, Low Noise, High Linearity, Single Supply Silicon BiCMOS Power Amplifiers Transceivers 25 GHz FT, 0.5 Micron, Low-Cost Process Chipsets Silicon Germanium 47 GHz FT, Bipolar RF Technology,

MRF580

Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
Contextual Info: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR RF580,A RF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

RF5812

Abstract: motorola MRF5812 MRF5812 mrf5812 equivalent
Contextual Info: MOTOROLA Order this document by RF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors RF581 RF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion

2n5835

Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

rf66

Abstract: rf88 RF55 RF46 RF86 RF78 RF89 RF67
Contextual Info: in te i AP-712 APPLICATION NOTE DRAM Controller for i960 JA/JF/JD Microprocessors February 9, 1995 Order Number: 272674-001 1-575 AP-712 1.0 INTRODUCTION This application note describes a D RAM controller for use with Intel's i960® JA/JF/JD microprocessors. Other

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the

Integrated Synthesizers with Mixers

Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
Contextual Info: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services

RFFM8800

Abstract: qfn 48 PACKAGE footprint 5.8ghz pa RFFM8500 RFFM8504 SW SPDT FOOTPRINT RF5725 RF522 RFFM8200 RFFM8202
Contextual Info: RFMD. Mobile Embedded WiFi Front End Products Portfolio The RFMD portfolio of single-chip integrated front end modules FEMs are designed for high-performance WiFi applications in the 2.4 to 2.5GHz and 4.9 to 5.8GHz ISM bands. These front end products are specifically

case 317-01

Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

TE 2549 MOTOROLA

Abstract: MRF581A motorola MRF5812 RF581 MRF581
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF581 RF581A RF5812, R1, R2 NPN Silicon H igh-Frequency Transistors Designed for high current low power am plifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion •

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

RF93

Abstract: RF72 RF89 rf74 RF76 rf66 RF86 RF92 DRAM Controller RF68
Contextual Info: A AP-712 APPLICATION NOTE DRAM Controller for i960 JA/JF/JD Microprocessors Paul Durazo SPG EPD 80960 Applications Engineer Intel Corporation Embedded Processor Division Mail Stop CH5-233 5000 W. Chandler Blvd. Chandler, Arizona 85226 February 9, 1995 Order Number: 272674-001

MRF581A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line RF581 RF581A RF5812, R1,R2 NPN Silicon High-Frequency Transistors D e signed for high current low power amplifiers up to 1.0 GHz. • Low N oise 2.0 d B @ 5 0 0 M H z • Low Intermodulation Distortion