RF92 Search Results

Contextual Info: Preliminary data sheet RF925960 -100 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operatein a class A/AB and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

24 LC 0261

Abstract: MRF927 42497 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line RF927T1 M RF927T3 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors lc = 10mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

SAW Filter

Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2010 Oscilent Controlled Document Ordering Code / Part Number Product Description 802-RF927.0M-B Wireless, RF SAW Filter Specification Contents o Mechanical Dimensions o Test Circuit o Maximum Ratings

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150

irf9630

Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
Contextual Info: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 RF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

BRF92A

Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features RF Wideband Amplifier/Oscillator 5G H z Transition Frequency Low Intermodulation Distortion High Power Gain SOT-23 Low Noise TOP VIEW Mechanical Data_ nr B C A Case: SO T-23, Molded Plastic Leads/Terminals: Solderable per M IL-STD-202,

IC-3560

Abstract: 0A60H-0A6EH ar15 magazine release specification f7251
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

diode 9232

Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
Contextual Info: F LÌI RF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

75Z21

Contextual Info: M O TORO LA SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line RF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, H igh-Frequency Transistors IC = 10 m A LO W NOISE HIGH FREQUENCY TRAN SISTOR Designed for use in low voltage, low current applications at frequencies to

RC131

Contextual Info: Preliminary Technical Data ADP1829, APD210X and ADP171X Reference Design FCDC 00057 FEATURES Seven Output Voltages: 5.0 V, 3.6 V, 3.3 V, 2.5 V, 1.8 V, 1.2 V, 0.9 V Output Current: 0.002 A to 3.0 A Input voltage: 10.8-13.2 V Ripple 2% ppk of Output Voltage

MOV 270/20

Abstract: 17052 LG 631 TV LG power supply MD 1803 FX 1000H PDI7052 1E40H-1E4EH D17052 nec upd 1511 Ub13b
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON 0 EVICÍ a íP D I 7 0 5 2 O N -C H IP IM A G E D IS P L A Y CONTROLLER 4 -B IT S IN G L E -C H IP M IC R O C O N T R O L L E R FOR VOLTAGE S Y N TH E SIZER /¿PD17052 includes the image display controller IDC which is capable of various displays and the 4-bit single­

brf92

Abstract: BRF92A transistor CQ 548 npn BFR92A marking p2
Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features RF W ideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 TOR VIEW nr Mechanical Data B C A Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,

rf66

Abstract: rf88 RF55 RF46 RF86 RF78 RF89 RF67
Contextual Info: in te i AP-712 APPLICATION NOTE DRAM Controller for i960 JA/JF/JD Microprocessors February 9, 1995 Order Number: 272674-001 1-575 AP-712 1.0 INTRODUCTION This application note describes a D RAM controller for use with Intel's i960® JA/JF/JD microprocessors. Other

1rf730

Abstract: IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523 IRF843
Contextual Info: - * sy i± € A Vds or £ * Vd g % V £ Vg s is Id Pd m m (Ta=25"C) less VG S th) I dss Vds= ft i# 14 b(on) Ds(on) g fs Ciss Coss Crss (*typ) (*typ) (*typ) (V) (A) * /CH (nA) m Vg s (V) ( M A) Vd s (V) min ma x (V) (V) (max) Id (mA) (max) (max) (max) (pF)

RF9801

Abstract: RF9802 GMSK applications GSM900
Contextual Info: RFMD . EDGE Product Portfolio The EDGE Enhanced Data Rates for Global Evolution market continues to call for the optimization of stringent 8-PSK linearity requirements, enabling data transmission rates in excess of 100 Kbps, while maintaining the levels of GMSK efficiency

RF93

Abstract: RF72 RF89 rf74 RF76 rf66 RF86 RF92 DRAM Controller RF68
Contextual Info: A AP-712 APPLICATION NOTE DRAM Controller for i960 JA/JF/JD Microprocessors Paul Durazo SPG EPD 80960 Applications Engineer Intel Corporation Embedded Processor Division Mail Stop CH5-233 5000 W. Chandler Blvd. Chandler, Arizona 85226 February 9, 1995 Order Number: 272674-001

1rf830

Abstract: IRF9120 IRF9123 rf9220 IRF9122 1RF822 IRF9121 IRF831 1RF9140 IRF833
Contextual Info: - 296 - f m £ M. * Vd s or € £ Vg s V Id Pd 11 Id s s Igss Vg s th) % W 4# D s (on; Vns= 1Í CTa=25*C) b(on) Ciss g fs Coss Crss (V) * /CH * /CH (A) <W) (nA) Vg s (V) (|ì A) Vd s (V) m in max CV) (V) ft m m % V g s =0 Vg s Vd g h f é (Ta=25^C) (max)

1RFP9240

Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
Contextual Info: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number

IC-3560

Abstract: 09E0H-09EEH ar15 magazine release specification
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD17062 4-BIT SINGLE-CHIP MICROCONTROLLER CONTAINING PLL FREQUENCY SYNTHESIZER AND IMAGE DISPLAY CONTROLLER The µPD17062 is a 4-bit CMOS microcontroller for digital tuning systems. The single-chip device incorporates an image display controller enabling a range of different displays, together with a PLL frequency

CoolRF9201SMA

Abstract: RF PCB Antenna RF 2.4Ghz antenna EMEVK9201 26MHz crystal EM9201 RF920 transistor AE RF rf9201 CoolRF9201CA
Contextual Info: EM MICROELECTRONIC - MARIN SA RF9201 Modules of 2.4 GHz Single-Cell Battery Transceiver Description The 2.4GHz modules are based on EM Microlectronic's low energy RF transceiver EM9201. These products are highly optimized for proprietary link application requiring ultra low power consumption