BD283 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes M M BD 2837LT1 M M BD2838LT1 ANODE 3 o — l -W -° CATHODE W 1 0 2 ANODE % MAXIMUM RATINGS EACH DIODE Rating Sym bol Value Vrm 75 Vdc Vr 30 50 Vdc 'fm 450 300 mAdc 'o 150

Contextual Info: bbS3T31 □ 0257clfl 247 H A P X N AUER PHILIPS/DISCRETE PMBD 2837 PMBD 2838 L7E D J V SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD2837 and 2838 consist of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high speed switching.

BD282

Abstract: BD285 BD286 BD283 BD284 BD281 B0283 NPN TRANSISTORS LIST BC461 2N5322 complementary npn-pnp
Contextual Info: Sem iconductors Transistors - NPN/PNP Complementary NPN/PNP Complementary Transistors R E FE R E N C E T A B L E Max P toi @ T c = 2 5 'C W Code Polarity BC440 BC460 NPN PNP BC441 BC481 N PN PNP } 10 } 10 BD281 BD282 N PN PNP } BD283 BD284 NPN PNP } BD285

RF marking N02

Abstract: MBD7000 BD7000 MMBD2836 MMBD2838 MMBD7000 SOT23 5 MARKING N02 Tj-12 m5c3
Contextual Info: MM BD2836 / MM BD2838 M M B 1 7000 Surface Mount Switching Diode S W IT C H IN G D IO D E I00-200m A M P E R R E S 75-100 V O LT S Features: *Low Current Leakage *Low Forward Voltage ^Reverse Recover Time Trr<4ns *Small Outline Surface Mount SOT-23 Package

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itch in g D iodes BD2835LT1 BD2836LT1 CATHODE ANODE 3 o- - » -N - O 1 —O 2 % CATHODE 2 C A S E 318-08, S T Y L E 12 S O T - 23 T O -2 3 6 A B M A XIM U M R AT IN G S (EACH DIODE) Rating Reverse Voltage

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

MBAW56

Abstract: MBAV99 MBAV70 BD283 MMBD914X BD2838 BAV99M MBAS16 MMBD2837X bd2836
Contextual Info: 6 3 6 7 2 5 5 M O T O R O L A S C <D I O D E S / O PTO . DEÍt,3t,7HSS 0 0 b l ñ b 4 59C 618 64 MBAL99 MBAS16 MBAV70 MBAV74 MBAV99 MBAW56 □ M ) MOTOROLA SEM ICO N D U CTO RS P.O. BOX 20912 • PHOENIX, A R IZO N A 85036 0 7^3-0? MMBD914X BD2835X BD2836X

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

k 2837

Abstract: C 2837 PMBD2837 PMBD2838 2838 ir PMBD
Contextual Info: • bbSB^ai 00257=10 247 ■ APX N AUER PHILIPS/DISCRETE PMBD 2837 PMBD 2838 b?E D SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The PM BD 2837 and 283 8 consist of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high speed switching.

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

smd diode marking A7 SOT-23

Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Contextual Info: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad

3D0 marking sot23

Abstract: MARKING CODE 7E VF M74 marking ir 1759 PMBD2835 PMBD2836 2835 diode marking 7E SOT-23 Diode
Contextual Info: • bLSBTBl 0DBS7TS S3fl ■ APX N AMER P H I L I P S / D I S C R E T E L.7E PMBD 2835 PMBD 2836 J> SILICON PLANAR EPITAXIAL HIGH SPEED DIODES The P M B D 2835 and 283 6 consist of tw o diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high speed switching.