PSEUDOMORPHIC Search Results

low noise pseudomorphic

Contextual Info: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE

ATF-38143

Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20
Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT-343 4 lead SC-70

nec 8772

Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE

SPF 455

Abstract: SPF-1576 SPF 455 H 5 SPF-1676
Contextual Info: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

LX5561LL

Abstract: LX5561
Contextual Info: LX5561 TM InGaAs – E-Mode pHEMT Low Noise Amplifier P RODUCTION D ATA S HEET The LX5561 is a low noise amplifier LNA for WLAN applications in the 2.4-2.5 GHz frequency range. This LNA is manufactured with an InGaAs Enhancement mode pseudomorphic HEMT (E-pHEMT) process.

MAX 8985

Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

k0604

Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
Contextual Info: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,

Contextual Info: CF004 Series GaAs Chips Specifications T^ = 25°C CF004-01 CF004-02 CF004-03 Ion Implanted Epitaxial Pseudomorphic HEMT Active Layer Frequency (GHz) Units Optimum Noise Figure ^D S 3-0 V, Iq s 10 mA 18.0 dB Ga Gain at NFopt V DS = 3.0 Vi lDS = 10mA 18.0

02S11

Abstract: max 7176
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB

Contextual Info: T485BVCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier • InGaAs/AIGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz

Contextual Info: ATF-50189 Enhancement Mode[1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologies’s ATF-50189 is a high linearity, medium power, low noise E-pHEMT FET packaged in a low cost surface mount SOT89[3] package. The combination of low

pseudomorphic HEMT

Abstract: CFA0103 CFA0103L CFA0103-L
Contextual Info: Low Noise GaAs FETs CFA0103 July 2006 - Rev 31-Jul-06 Features High Gain Super Low Noise Pseudomorphic HEMT 70 Mil Hermetic Package Applications Satellite Receivers Point-to-Point Radio Receivers Commercial Communications Defense Electronics General Description

NE24200

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip

ec2612 phemt

Abstract: EC2612
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm

Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing

ec2612 phemt

Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm

sot marking a1 353

Abstract: ATF-34143-BLKG ATF-34143 A004R ATF-33143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 LA 7873
Contextual Info: ATF-34143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Based on its featured performance, ATF-34143 is ideal for the first stage of base station LNA due to the excellent combination of low noise figure and high linearity[1]. The device is also suitable for

Contextual Info: LP6836SOT343 PACKAGED MEDIUM POWER PHEMT • FEATURES ♦ 0.5 dB Noise Figure at 2 GHz ♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz ♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz ♦ 70% Power-Added-Efficiency • DESCRIPTION AND APPLICATIONS The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

Contextual Info: M w T T - 3 /-Z 5 - H 4 26 GHz Low Noise PSEUDOMORPHIC HEMT GaAs FET [PRELIMINARY 10/91] MICROWAVE T e c h n o l o g y niCROUAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES “i 50h w I ] m b i a m c m odooisi isa • nruv