NE321000 Search Results

NE321000 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE321000		California Eastern Laboratories	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET	Original	PDF	135.42KB	6
NE321000		NEC	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP	Original	PDF	53.96KB	12

NE321000 Price and Stock

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LUMEL SA


LUMEL SA EA19N E32100000001 Ammeter; on panel; I AC: 0÷400A; 40÷72Hz; Length: 97mm; EA19; polska
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	EA19N E32100000001				1	1 $33.37 10 $30.98 100 $30.98 1000 $30.98 10000 $30.98	Get Quote
LUMEL SA EA19N E32100000008 Ammeter; on panel; I AC: 0÷400A; 40÷72Hz; Length: 97mm; EA19
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	EA19N E32100000008				1	1 $30.35 10 $28.18 100 $28.18 1000 $28.18 10000 $28.18	Get Quote
LUMEL SA EA19N E32100000108 Ammeter; on panel; I AC: 0÷400A; 40÷72Hz; Length: 97mm; EA19
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	EA19N E32100000108				1	1 $38.65 10 $35.89 100 $35.89 1000 $35.89 10000 $35.89	Get Quote
LUMEL SA EA19N E32100000005 Ammeter; on panel; I AC: 0÷400A; 40÷72Hz; Length: 97mm; EA19
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	EA19N E32100000005				1	1 $45.03 10 $41.81 100 $41.81 1000 $41.81 10000 $41.81	Get Quote
LUMEL SA EA19N E32100000000 Ammeter; on panel; I AC: 0÷400A; 40÷72Hz; Length: 97mm; EA19; polska
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	EA19N E32100000000				1	1 $30.35 10 $28.18 100 $28.18 1000 $28.18 10000 $28.18	Get Quote

NE321000 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NEC D 809 F Abstract: transistor NEC D 586 NE321000 NF 841 nec 0882 s11 diode shottky Contextual Info: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and	Original	NE321000 NE321000 NEC D 809 F transistor NEC D 586 NF 841 nec 0882 s11 diode shottky	PDF
NE321000 Contextual Info: NONLINEAR MODEL NE321000 SCHEMATIC Ldx DRAIN Lgx GATE Q1 0.39nH 0.39nH Lsx 0.13nH CGSx 0.02pF CDSx 0.02pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -0.774 RG 3 time VTOSC RD 3 capacitance farads ALPHA 8	Original	NE321000 1e-14 2e-12 08e-12 21e-12 025e-12 24-Hour NE321000	PDF
hj 4049 Abstract: NE321000 Alpha Wire 912 Nec 9002 S1142 Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz • GATE LENGTH: ≤0.2 µm	Original	NE321000 NE321000 24-Hour hj 4049 Alpha Wire 912 Nec 9002 S1142	PDF
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L	PDF