NE321 Search Results

02S11

Abstract: max 7176
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB

22S21

Abstract: NE329 NEC Ga FET marking A
Contextual Info: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm

NE32184A

Abstract: NE32100 NE32183A nec ne3 INE32184A
Contextual Info: NE C/ CALIFORNIA 3QE D tiMSTMlM Ü0Ü20SM fl • NECC 7 r .j/-z r r ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32183A NE32184A OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: NF = 1.0 d B T Y P a tf = 12 GHz NE32100 CHIP • HIGH ASSOCIATED GAIN:

transistor NEC D 586

Abstract: NEC D 586
Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility

004pF

Abstract: NE3210S01 NE3210
Contextual Info: NONLINEAR MODEL SCHEMATIC NE3210S01 CGD_PKG 0.001pF Ldx DRAIN Q1 Lgx GATE 0.68nH Rdx 6 ohms Rgx 0.72nH 6 ohms Lsx 0.1nH CGS_PKG 0.04pF CDS_PKG 0.035PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -0.798 RG 8 VTOSC RD

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB

C band FET transistor s-parameters

Abstract: ne3210s01 NE3210S01-T1 NE3210S01-T1B
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

NE3210S01

Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

3210S01

Abstract: ne3210s01 NE3210S01-T1B NE3210S01-T1 NE3210
Contextual Info: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 – 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 – • GATE WIDTH: WG = 160 µm

NE3210S01-T1B

Abstract: ne3210s01 nec 4814 3210S01 NEC 7812 NE3210S01-T1 ne 7812 NEC Ga FET marking k
Contextual Info: NEC's SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ±

NE3210S01

Abstract: nec 4814 NEC Ga FET marking A 4524 kf NE3210S01-T1
Contextual Info: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm

NE3210S01

Abstract: 3210S01 NE3210S01-T1B NE3210S01-T1 ne 7812 d 2689 marking so1
Contextual Info: NEC's SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 m 2. 1 ±

nec 0882 p

Abstract: nec 0882 p 2
Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR N E 3 2 1 0 S 0 1 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

150J10

Contextual Info: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz 2.0 ± 0.2 • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm

3210S01

Abstract: NE3210S01-T1B nec 0882 NEC Ga FET marking A NE3210S01-T1 150J10
Contextual Info: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm

NE321000

Contextual Info: NONLINEAR MODEL NE321000 SCHEMATIC Ldx DRAIN Lgx GATE Q1 0.39nH 0.39nH Lsx 0.13nH CGSx 0.02pF CDSx 0.02pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -0.774 RG 3 time VTOSC RD 3 capacitance farads ALPHA 8

hj 4049

Abstract: NE321000 Alpha Wire 912 Nec 9002 S1142
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz • GATE LENGTH: ≤0.2 µm

m04 SMD

Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
Contextual Info: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /

NE32184A

Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
Contextual Info: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B

transistor NEC D 882 p

Abstract: NE321000 nec d 882 p datasheet nec d 882 p opt 300
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

NE5510279A

Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
Contextual Info: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数