CF004 Search Results

Contextual Info: CF004 Series GaAs Chips Specifications T^ = 25°C CF004-01 CF004-02 CF004-03 Ion Implanted Epitaxial Pseudomorphic HEMT Active Layer Frequency (GHz) Units Optimum Noise Figure ^D S 3-0 V, Iq s 10 mA 18.0 dB Ga Gain at NFopt V DS = 3.0 Vi lDS = 10mA 18.0

CF004-01

Abstract: CF004-03 CF004 CF004-02 1309M
Contextual Info: CF004 Series GaAs Chips Specifications T^ = 25°C CF004-01 CF004-02 CF004-03 Ion Implanted Epitaxial Pseudomorphic HEMT Active Layer Frequency (GHz) Units Optimum Noise Figure ^D S = 3-0 V. Iq s = 10 mA 18.0 dB Gain at NFopt V DS = 3.0 Vi lDS = 10 mA 18.0

CF004

Contextual Info: CF004 Series g„a @p™ˆ›‡•“•˜–‹Œ†@hemt@„”‡@mesfet@c‹Œ–™ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

pseudomorphic HEMT

Abstract: CF004
Contextual Info: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

CF004

Abstract: CF004-01 CF004-02 CF004-03 pseudomorphic HEMT
Contextual Info: CF004 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 1.5 dB at 18 GHz □ High Gain: Usable to 44 GHz □ Flat Gain for Distributed Amplifiers □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure

Contextual Info: CF004 Series GaAs Pseudomorphic HEMT and MESFET Chips J Super Low Noise: 1.5 dB at 18 G H z □ High Gain: Usable to 44 GHz □ Flat Gain for Distributed Amplifiers □ Active Layers Include: Pseudomorphic H E M T , Epitaxial and Ion Implanted J W afer Qualification Procedure

h3ba omron timer

Abstract: omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a
Contextual Info: Cat. No. Z901-E1-05 SYSMAC NE1S Series NE1S-CPU01 Programmable Controller OPERATION MANUAL NE1S Series NE1S-CPU01 Programmable Controller Operation Manual Revised December 2006 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

Contextual Info: FLEXIBLE CONDUIT & FITTINGS FCA200 Flexible Conduit Fittings D1 L1 L2 L3 D3 D2 Lock Nut Specifications: s -ATERIAL5,6 .YLON s #OLOR'REY s 4EMP2ANGE  &TO &  #TO # Mounting Hole D1 Body Claw Nut Features: s #ONNECTSPLASTICCONVOLUTEDCONDUITTOCONTROL

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

CMS12

Abstract: SPDT FETs
Contextual Info: GaAs FETs and MMICs □ 0.3-micron GaAs MESFETs for Discrete Devices and MMICs □ High Gain: Up to 40 GHz □ Up to +28 dBm Px dB at 18 GHz □ Military High-Rel Screening □ 2-6 GHz MMIC Amplifiers with Low DC Current or Medium Power □ DC to 18 GHz MMIC SPDT with

CRH35

Abstract: MCRH 1316F 35V336M 35V226M CRH35V476M MCRH35V107M8X11 100V225M TA 686
Contextual Info: REVISIONS m ulticom p DCP # REV DOC. NO. SPC—F004 DESCRIPTION 1881 DRAWN EO RELEASED DATE * Effective: 7 /8 /0 2 CHECKD DATE HO 1 2 3/0 6 / 01 2 3/0 6 / * DCP No: 1398 APPRVD DATE / 01 2 3/0 6 JWM FEATURES: 1. WIDE CV VALUE RANGE FOR GENERAL PURPOSE. 2. SAFETY VENT CONSTRUCTION.

xg1015-SE

Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Contextual Info: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com

cf325

Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8

amplifier ghz

Abstract: CF005-11 GaAs FET chip mmic s3 CF001-01 CF001-02 CF001-03 CF003-01 CF003-02 CF003-03
Contextual Info: CELERITEK S7E D M 7 4 S 0 3 0000013 360 « C L R T CELERITEKc o m p o n e n ts , b u t p a rtic u la rly in th e m a n u fa c tu re o f p o w e r a m p lif ie rs . T h e c o m p a n y h as d e v e lo p e d p ro p r ie ta r y te c h n iq u e s fo r m a p p in g th e rm a l p ro file s o f F E T s m o u n te d on