ec2612 phemt
Abstract: EC2612
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
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ec2612 phemt
Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
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ec261240ghz18ghzdsec26120077+5-17-mar-00ec2612 phemtphemt transistor 30ghzmar 618 transistorls 9814
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Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
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ec261240ghz18ghzdsec26120077+1-17-mar-00
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pHEMT transistor 30GHz
Abstract: EC2612 ec2612 pHEMT 158467
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low
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ec261240ghz18ghzdsec26120077+4-17-marc-00phemt transistor 30ghzec2612 phemt158467
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EC2612
Abstract: ec2612 pHEMT MAR 618 transistor
Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
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ec261240ghz18ghzdsec26120077+3-17-mar-00ec2612 phemtmar 618 transistor
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