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    EC2612 Search Results

    EC2612 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EC2612
    United Monolithic Semiconductors 40GHz Super Low Noise PHEMT Original PDF 112.41KB 8
    EC2612-99F/00
    United Monolithic Semiconductors 40GHz Super Low Noise PHEMT Original PDF 128.1KB 8
    EC2612-99F/00
    United Monolithic Semiconductors 40GHz superlow noise PHEMT Original PDF 112.41KB 8
    EC2612-99X/00
    United Monolithic Semiconductors 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Original PDF 154.68KB 11
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    EC2612 Price and Stock

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    United Monolithic Semiconductors EC2612-99S

    RF SMALL SIGNAL TRANSISTOR PHEMT
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    Richardson RFPD EC2612-99S 1
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    United Monolithic Semiconductors EC2612-99F

    RF SMALL SIGNAL TRANSISTOR PHEMT
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    Richardson RFPD EC2612-99F 100
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    Sensata Circuit Breakers UPG1-1REC2-61-202-A-00

    Circuit Breakers
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    Sensata Circuit Breakers APGN1-1REC2-61-262

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    EC2612 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ec2612 phemt

    Abstract: EC2612
    Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original
    EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 ec2612 phemt PDF

    ec2612 phemt

    Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
    Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original
    EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 phemt pHEMT transistor 30GHz MAR 618 transistor LS 9814 PDF

    Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm


    Original
    EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 PDF

    pHEMT transistor 30GHz

    Abstract: EC2612 ec2612 pHEMT 158467
    Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original
    EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Marc-00 pHEMT transistor 30GHz ec2612 pHEMT 158467 PDF

    EC2612

    Abstract: ec2612 pHEMT MAR 618 transistor
    Contextual Info: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm


    Original
    EC2612 40GHz EC2612 18GHz 40GHz DSEC26120077 -17-Mar-00 ec2612 pHEMT MAR 618 transistor PDF

    ec2612 pHEMT

    Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
    Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low


    Original
    EC2612 40GHz EC2612 18GHz 40GHz DSEC26128099 ec2612 pHEMT pHEMT transistor 30GHz TRANSISTOR 30GHZ PDF

    PPH25X

    Contextual Info: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14


    Original
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